本實驗以感應耦合電漿源（Inductively Coupled Plasma, ICP）沈積離子感測薄膜，以探討製程溫度與不同氣體流量比對感測膜之敏感度之影響。在沉積完感測薄膜後，利用原子力顯微鏡量測表面的粗糙度、傅利葉紅外光譜儀量測薄膜之化學鍵結、膜厚測厚儀量測薄膜厚度與折射率、低掠角X光繞射分析感測膜結晶情形與敏感度之關係、能量散佈分析儀可分析感測膜之成份與敏感度之關係、C-V曲線量測感測膜之界面陷阱電荷對感測敏感度之影響及I-V曲線量測感測膜之漏電流之情形。
由實驗結果可知當氣體流量比N2O / NH3=0/180，製程溫度200℃時，有最佳之氫離子敏感度54.6mV/pH，其氫離子感測範圍為pH 1至pH 11，非常接近理論值59.6 mV/pH。當氣體流量比N2O / NH3=180/0，製程溫度300℃時，其最佳之鈉離子敏感度29.5mV/pNa，其鈉離子感測範圍為pNa 1至pNa 3；當氣體流量比N2O / NH3=150/30，製程溫度200℃時，可得最佳之鉀離子敏感度 24.5 mV/pK，其鉀離子感測範圍為pK 1至pK 3

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