本論文設計了一個4×4 CMOS三軸電容式觸覺感測陣列及光學近接感測結合讀取電路開發，使用TSMC 0.18 μm 1P6M製程製作，觸覺感測器使用金屬層作為結構上下極板，並且使用簡易的後製程步驟，有效降低成本以及晶片製作上的複雜度。光感測採用N-WELL/P-SUB的架構，設計上嵌入觸覺陣列中，提供近接感測(proximity sensing)之功能，觸覺感測感測單元大小為0.25 mm×0.25 mm，陣列數目為 4×4，近接感測單元大小為31.66 μm×23.5 μm，陣列數目為3×3。
兩種機制搭配各自的感測電路感測訊號的變化，觸覺感測電路使用切換式電容電荷積分電路，搭配切換式時脈訊號產生器對積分電路進行充放電，以分辨x/y/z受力變化。近接感測則是透過APS (Active Pixel Sensor)的方式感測光電流變化，判斷物體的接近程度。
在量測結果顯示，觸覺模態三軸感測靈敏度(Sensitivity)分別為z軸為317.21 %⁄mN，x軸為3.18 %⁄mN，y軸為3.06 %⁄mN，可量測的最小解析度(Resolution)分別為z軸為3.437 μN，x軸為0.34 mN，y軸為0.355 mN。電路雜訊124.97 〖μV〗_rms ; 近接感測部分的感測度為2170.251 V/cm/sec，最遠可以感測距離為11 cm，可量測的最小解析度(Resolution)為7.244×10^(-3) cm，電路雜訊〖496.94 μV〗_rms。

This work designed and implemented a 4×4 three-axis capacitive tactile sensor array and an optical proximity sensor based on the TSMC 0.18 μm CMOS 1P6M process. The tactile sensor's structure used metal layers as the upper and lower electrode plates and employed simplified post-processing steps, effectively reducing costs and the complexity of chip fabrication. The optical detector used an N-WELL/P-SUB structure, integrated within the tactile sensor array design, providing proximity sensing functionality. The tactile sensor unit pixel size is 0.25 mm×0.25 mm arranged in a 4×4 array, while the proximity sensor unit pixel size is 31.66 μm×23.5 μm arranged in a 3×3 array.
The two mechanisms were integrated with their sensing circuits to detect signal variations. The tactile sensing circuit employed a switched-capacitor charge integration circuit with a switch clock signal generator to charge and discharge the integration circuit, enabling the detection of x/y/z force variations. The proximity sensing circuit implemented the Active Pixel Sensor(APS) approach to detect photocurrent changes, determining the proximity level of objects.
The measurement results demonstrated that the tactile sensing mode achieved three-axis sensitivity of 317.21 %/mN, 3.18 %/mN, and 3.06 %/mN for the z-, x-, and y-axis. The minimum measurable resolutions are 3.437 μN for the z-axis, 0.34 mN for the x-axis, and 0.355 mN for the y-axis, with the circuit noise level of 124.97 〖μV〗_rms. For the proximity sensing mode exhibited a sensitivity of 2170.251 V/cm/sec with a maximum detection distance of 11 cm and a minimum resolution of 7.244×10^(-3) cm, while exhibiting a circuit noise level of 〖496.94 μV〗_rms.

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