在本論文中，我們提出了一種新的清洗液及方法。和傳統（RCA）清洗方式不同的是，這種新清洗液省略了SC-2的步驟，因此稱為一步驟（One-step）清洗。這新清洗液將發展用來取代傳統的兩個步驟（SC-1和SC-2）的清洗方法。我們在傳統SC-1的清洗液中，加入界面活性劑TMAH及熬合物EDTA來增強清洗之效率。從實驗結果顯示，新清洗液對於矽晶片表面上微粒與金屬的去除清洗，呈現了極大的能力。而表面吸收與雙層的模型，可以解釋TMAH的表面行為。藉著這個模型，我們可以瞭解微粒移除及表面粗造度的原因。然而，從電性的觀點看來，經新清洗液製作出的金氧半電晶體，電性比傳統RCA清洗而製作出的金氧半電晶體好。除此之外，混合了NH4OH, TMAH, EDTA及H2O2之新清洗液，並在溫度六十度五分鐘的清洗方法，無論在微粒去除、金屬污染、電性的行為，皆有非常好的成效及表現。因此，基於省時、降低成本及良好電性表現的優點看來，這新清洗對於未來超大尺寸的晶片清洗，具有非常大的潛力。

In this thesis, we proposed a new advanced wet-chemical one-step cleaning process, which omits HPM step in RCA. A novel one-step cleaning solution had been developed for standard and pre-gate oxide cleaning to replace the conventional RCA two-sep cleaning recipe, which includes APM (or SC-1) and HPM (or SC-2) step. Tetra Methyl Ammonium Hydroxide (TMAH) and Ethylene Diamine Tetra Acetic acid (EDTA) were added into the RCA SC-1 cleaning solution to enhance cleaning efficiency. From the experimental results, the particle and metallic contaminations on the bare-Si wafer surface could be removed significantly by applying this novel one-step cleaning solution. The surface adsorption and double layer model could explain the surface behavior of TMAH solutions. Based on the model, the improvement on the particle, surface roughness and the metallic contaminants on the surface can be realized. It was observed that the electrical properties of MOSFET after cleaning with this novel solution were better than the conventional RCA cleaning. Besides, the cleaning method combining NH4OH, TMAH, EDTA and H2O2, at 60 °C for 5-min, shows the high performance on particle removal, metal cleaning, surface smoothness and electrical behavior. Hence, this novel one-step cleaning process is very promising for future large-size silicon wafer cleaning due to the advantages of time saving, cost down, and high performance.

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