首先，我們將反應溫度控制在 800℃ 以及1 × 10 -2 壓力下利用150 nm的金粒子來優化金 -氧化鎵核殼奈米線的生長條件，並用 SEM 、 XRD 以及TEM 來分析奈米線的表面形貌，晶體結構和組成。然後透過搭配三軸調整器的光學顯微鏡以及標準電子束微影技術來製作奈米元件
接著，我們利用Keithley 4200 電流電壓量測儀器來測量氧化鎵奈米線和金-核殼氧化鎵奈米線的電流電壓特性和電阻轉換行為。為了要討論介面和金屬之間的電子傳導路徑，我們比較有無金-核奈米線的電阻轉換特性，也在金-核殼氧化鎵奈米線上設計了不同的電極距離，以及針對金-核殼氧化鎵奈米線直徑的元件進行研究。

At first, we tried to optimize the growth condition of Au-Ga2O3 core-shell nanowires with 150 nm Au particles under the reaction temperature of 800℃ and the pressure of 1×10-2 torr. Afterwards, we used SEM, XRD, TEM to analyze the surface morphology, crystalline structure and the composition of pure Ga2O3 nanowires and Au-Ga2O3 core-shell nanowires.
Besides, we fabricated the nanodevices by the optical microscope equipped with manipulator and a series of standard electron beam lithography (EBL) techniques.
Finally, we measured the I-V characteristics and resistive switching behaviors of the pure and core-shell Ga2O3 nanowires in Keithley 4200. We also designed nanodevices with different electrode distances and diameters to discuss the characteristics.

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