本實驗以純銦及純錫粉末作為來源粉末，並使用高溫水平爐管為加熱源，通入Ar (90%) + H2 (10%)為載氣，成功藉由熱蒸鍍法在鍍金之矽基板上成長得到均勻且高密度的氧化銦錫奈米線。實驗結果顯示，高溫段為600°C的三段持溫製程為目前的最佳製程條件，且在接近來源粉末的高溫區，能得到較低溫區更高密度且均勻的奈米線。藉由GIAXRD與TEM的繞射點及高解析影像分析，可確認600°C及650°C製程所得之氧化銦錫奈米線為單晶的氧化銦結構。本實驗的奈米線析出機制為VLS機制，奈米線體為摻雜少量錫之氧化銦，奈米線末端有催化顆粒，其成分由金、銦、錫、氧所組成。本實驗製程所得之氧化銦錫奈米線的電阻率約在103 μΩ等級，符合導體的電性標準。在光譜分析部分，氧化銦錫奈米線對可見光的穿透率約為50 ∼ 60%，並在375 nm及585 nm波長位置有兩個吸收峰值，分別是由氧化銦錫本身的能隙及表面的氧空缺所造成。

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