鐵電材料由於其特殊晶體結構的關係，擁有電滯曲線之特性，可以廣泛應用於非揮發性鐵電隨機記憶體（NVFARM）、致動器（Actuator）、感測器（Sensor）等用途之上。
本論文以脈衝雷射剝鍍法（Pulsed Laser Ablation Diposition，PLD）為主軸，在低溫（200℃）氧氛圍下（Po2=0.05mbar）剝鍍鋯鈦酸鉛（Pb1.03（Zr0.52Ti0.48）O3，PZT）鐵電薄膜，並在高溫（550℃∼650℃）下以快速退火盧（RTA）做退火處理。

由於基板與PZT間晶格不匹配之因素，PZT很難成長為純鈣鈦礦（Perovskite）結構之薄膜，因此我們發展出雙層剝鍍之製程。此製程可有效減少微裂隙的發生，並使得薄膜結晶程度提高，減少π相的比例。並且以此為基礎，作為發展鐵電厚膜（1μm）之準備。在實驗的最後，我們嘗試以低溫製程剝鍍釕酸鍶（SRO）薄膜用以作為PZT與白金基板間的緩衝層，期望藉此減低薄膜疲勞的效應，但此項製程薄膜品質控制不易，無法獲得較佳之結果。

在雙層薄膜中，我們得到的最佳電性為Pr=18.05 μC/㎝2、EC=78.13 kV/㎝、漏電流在200 kV/㎝的電場強度下大約維持10-6A/㎝2的程度。而在厚膜製程中，我們可將矯頑電廠逐漸降低至EC=25 kV/㎝。

Much attention has been paid to the application of ferroelectric films to the fabrication of integrated capacitors. Pulsed laser deposition (PLD) process is advantageous over other thin film deposition techniques in the accuracy in composition control and the simplicity in process control. However, improvement on the uniformity of PLD films is needed for practical application. In this study, we modified the pulsed laser deposition process for synthesizing the PZT films, emphasizing the effect of the process of multi-layer deposition on the electrical properties of PZT film.
The PZT films were prepared by pulsed laser deposition (PLD) technique (l=248 nm, Lambda Physik, Lextra 300) with an energy density of 7 J/cm2. The films were deposited at 200℃ in 0.05 mbar oxygen pressure (Po2) on Pt-coated silicon substrates, followed by rapid-thermal-annealing at 550~650℃ under 1 atm Po2. The crystallinity of the films was examined by X-ray diffractometry. The electrical polarization vs. electric field and leakage current density vs. electric field characteristics of the PZT films were measured using the Sawyer-Tower technique and H. P. 4156 parameter analyzer, respectively.

In multi-layer PLD process, the crystallinity of the PZT/Pt(Si) films is optimized when the films were PLD in 0.05 mbar Po2 (at 200℃), followed by rapid-thermal-annealing (RTA) at 550~650℃(1~60 s). XRD results indicate that it needs at least 575℃ to convert the amorphous PZT into perovskite.

Multi-layer pulsed laser deposition process has been successfully applied for growing the Pb(ZrxTi1-x)O3, PZT films. The multi-layer PZT films exhibit better ferroelectric characteristics (Pr=18 mC/cm2; Ec＝60 kV/cm) then single-layer PZT film (Pr=10 mC/cm2; Ec＝60 kV/cm).

In summary, multi-layer PLD process has been successfully applied for synthesizing PZT films. Using predeposition PZT thin film as buffer layer results in a PZT film, possessing ferroelectric properties superior to the Ec and Pr values of PZT films with one layer.

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