研究生: |
吳皇都 Wu, Huang-Tu |
---|---|
論文名稱: |
利用網印及化學蝕刻方式製作射極鈍化背面局部擴散之單晶矽太陽能電池研究 Using Screen Printing and Chemical Etching to Produce Mono-crystalline PERL Solar Cells |
指導教授: |
王立康
Wang, Li-Karn |
口試委員: |
張正陽
Chang, Jenq-Yang 何文章 Ho, Wen-Jeng |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 光電工程研究所 Institute of Photonics Technologies |
論文出版年: | 2012 |
畢業學年度: | 100 |
語文別: | 中文 |
論文頁數: | 74 |
中文關鍵詞: | 太陽能電池 |
外文關鍵詞: | solar cell |
相關次數: | 點閱:3 下載:0 |
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因為solar grade的單晶矽品質較差,矽塊材本身的缺陷會比較多,所以我們在矽晶片表面利用PECVD沉積氫化非晶矽薄膜(a-si:H),並用真空退火爐做285℃到400℃的退火動作來修補表面斷鍵進行鈍化(passivation)處理。利用FTIR和QSSPC分別量測比較有無氫化非晶矽薄膜的氫含量和少數載子生命周期,且不同的退火溫度對少數載子生命周期的影響。
由於我們的結構是射極鈍化背面局部擴散太陽電池,所以背面會用PECVD沉積一層厚度約100nm的氮化矽做保護跟絕緣用,接著使用網印蝕刻膠的方式做背面電極圖形的開口,此種方法會比黃光微影定義圖形的方式所需的時間及成本來的低,較適合應用在業界量產的模式。
實驗結果顯示局部的背面電場載子收集率會比全面的背面電場高,而經過鈍化處理的電池表面缺陷較少,進而提高短路電流(Jsc)及效率。
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