此篇論文是以0.35um製程之橫向金氧半場效電晶體為主體，分成量測與模擬兩個部分的特性來探討分析，ㄧ是使用HP4156及Keithley 236量測元件的Id-Vd、Id-Vg曲線來分析導通電阻的組成及DIBL特性參數的萃取，另ㄧ方面是以台積電目前已生產0.35um製程的高壓元件，使用Tsuprem4及Medici模擬軟體進行部份結構調整，期許能達到更佳的效果。

In this thesis, the investigation subject is lateral diffusion metal-oxide-silicon field effect transistor fabricated with 0.35um process technologies. It is divided into two sections, namely measurement and simulation. The former part is fulfilled by measuring the Id-Vd and Id-Vg curves with HP4156 and Keithley 236 systems in order to analyze the components’ electrical properties such as on-resistance and breakdown voltage as well as to extract characteristic parameter of DIBL. On the other hand, TCAD tools like Tsuprem4[1] and Medici [2]are used to modulate some portion of the device structure with a well-built 0.35um high voltage process technology to optimize the device performance. Satisfactory results are obtained.

[1] AVANT! TSUPREM-4, Two-Dimensional Process Simulation Program,Version-2000.4.0
[2] AVANT! MEDICI, Two-Dimensional Device Simulation Program, Version-2000.4.0
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