於1980年代，半導體晶片最主要的可靠度問題是由熱載子所造成，而透過「幸運電子模型」，可以完美描述熱載子的行為。然而，以幸運電子模型中的描述，短通道元件操作在低電壓下，熱載子不再是可靠度上重要的問題。在本論文中，研究了N型短通道鰭式電晶體在低於1.5伏特下的熱載子退化現象。
　　從實驗的數據中，我們發現N型鰭式短通道場效電晶體在1.5伏特以下的操作，仍然造成熱載子退化，有些現象與在傳統平面長通道下的熱載子退化現象相同，如在反掃IDVG下的各項表現都比較差，缺陷都集中在汲極。不管是臨界電壓或是驅動電流的退化的時間指數皆大於0.3。反之，有些現象卻大不相同，如當閘極電壓與汲極電壓相同時，甚至大於汲極電壓時，會產生最大的基底電流。高溫下元件有較嚴重熱載子退化趨勢。驅動電流退化的時間指數與閘極電壓沒有相依性。另外，透過隨機電報雜訊的量測手法分析熱載子退化，隨著退化的發生，電報雜訊也會產生變化。主要觀察到的缺陷在二氧化矽內，觀察到的缺陷垂直深度，隨熱載子的退化並沒有太大改變。

　　In 1980, hot carrier instability (HCI) is the main problem of reliability in semiconductor industry. With the proposition of the Lucky Electron Model (LEM), the behavior of HC was well explained. However, based on LEM we expect that HCI will be unimportant for devices with low operating voltage. In this thesis, hot carrier effects on VDD less than 1.5V devices were studied.
　　From experiments, it is clear that HCI prevails for short channel N-FinFET with operating below 1.5V. Some observations are consistent with long channel planar MOSFETs. Such as, VTH and SS are worse in reverse IDVG sweep, which means the induced traps mostly located on the drain side. The time exponents of hot carrier degradation are higher than 0.3. However, there some observations are completely different. The bias conditions of maximum substrate current shift from VG=0.5VD to VG=VD even VG>VD. Devices degrade more severe in higher temperature.

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