線型雷射加工在諸多面型模組如主動矩陣顯示與太陽能面板製程上逐漸扮演重要角色，係因線型光束經掃描後可獲得整體面型加工之要求，而其線截面之微細程度又可滿足面型裝置上個別精微元件加工之需求。目前已有市售之線型雷射加工系統，但多價格昂貴，且因應個別加工需求之參數調校多仰賴原廠，自主性低。開發具技術自主性與價格適中之線型雷射加工系統對國內正逐漸成長之製程設備產業與規模已龐大之面型裝置相關產業均有極大之效益。多數市售線型雷射加工系統使用透鏡陣列獲致長線方向之均勻度，係因此方式之相對其他方案可實現性高。但此方式多使用於多模雷射，而不適宜單模雷射之主要原因為高同調光之干涉行為干擾線光束之均勻度。
本文應用折繞複合光學模組，利用高速轉動全像擴散片配合聚焦與準直元件，成功解決干涉現象造成之線型光束均勻度問題而將透鏡陣列為基礎之線型雷射系統應用於同調性極高之低M2雷射，並配合Etendue概念，對動作機制建立物理模型，成為一具系統性之創新技術。目前系統使用M2小於1.8之532nm雷射光源，獲致均勻度達90%、長度100mm、聚焦線寬50um之線型雷射。
同時延續已驗證可行之構想，為了使系統效能更加提升，自行研發本技術方案之關鍵元件，一維微小發散角擴散片。透過MEMS蝕刻技術設計製造出角度僅3度之一維擴散片並成功應用於線型雷射系統中。

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