在奈米級MOSFET裡有效電性長度異於光罩長度或物理長度甚多，且是spice元件模型裡最重要的參數之一。本論文考慮奈米級MOSFET中，短通道效應、速度飽和效應、寄生電阻與有效長度效應、閘級漏電流效應、擴散電流效應、ballistic transport等影響，重新推倒IV方程式。
本論文改善Shift-and-Ratio Method，從實際量得的數據帶入新推導出更精確的IV方程式，萃取出有效長度與寄生電阻，並與Suciu-Jonston Method、De La Moneda Method、Shift-and-Ratio Method及Gate Leakage Method算出的結果做比較，發現傳統方法萃取出的數值不符合物理意義，唯有我們的新方法能得到合理的值。
本論文在最後簡單討論在P型MOSFET的源極汲極共參雜(co-implant)另一種參雜物的影響。運用新的方法算出有效電性長度及有效寄生電阻在不同製程的差異性，我們發現共參雜氟(fluorine)可以得到最陡峭的接面(abrupt shallow junction)。

A new, more accurate and more reasonable method of　determining the MOSFETs effective channel length and source-drain　series resistance is presented in this thesis. This method improves　shit-and-ratio method and develops a more accurate calculation　system. Comparing the extracted values from the Suciu-Johnston　method, De La Moneda method, shift-and-ratio method, gate leakage method, and our new method, we prove that our method is the most accurate and reasonable one. Besides, we use this newly developed method to observe the co-implant source/drain effect in a 65nm pMOSFET.

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