第一部份
本實驗藉由常壓化學氣相沈積法，在沒有金屬催化劑的情況下，製出高密度CrSi2(核)/SiO2(殼)奈米電纜，發現有異常的鐵磁性質，這是有別於它們在塊材時為反磁性材料的。內部CrSi2奈米線為C40型態結構(空間族為P6222)，其沿著[0001]方向成長，外側為非晶的SiO2層覆蓋。因此我們藉由第一原理摸擬近似真實奈米電纜的表面結構，結果發現靠近表面的Cr原子有約2μB的磁化量，直到深度0.5nm後內部Cr原子磁性就跟塊材時一樣(0μB)。藉由進一步的近似，並考慮表面粗糙度造成的表面積增加，計算結果得出和實驗結果相同數量級的磁化量。因此這樣的奈米電纜結構，主要是因為CrSi2表面積的增加，表面的Cr原子未完全配位鍵結及鍵結的扭曲，使得Cr原子3d軌域的自旋向上和自旋向下的電子數不同，而有鐵磁性材料的性質。這些結果顯示了一個新的方式用來調整核/殼奈米電纜的磁性質。

第二部份
本實驗利用雙離子束濺鍍系統(dual ion beam deposition system，DIBD)鍍膜底層反鐵磁NiO，雙離子束包含直流(direct current，DC)離子源與輔鍍的射頻(radio frequency，RF)離子源。改變輔鍍的射頻離子源的轟擊電壓(VRF=50、75、100、150和200V)，以及射頻離子槍中氧氣的流量(O2流量=0.5、0.8和1sccm，固定氬氣流量2.5sccm)，來探討這些改變對NiO薄膜成長的影響。原子力顯微鏡分析NiO薄膜其表面粗糙度，並藉由低掠角X光繞射分析NiO薄膜成長的擇優成長取向，以了解底層NiO薄膜的成長是否影響後續Co/Pt的成長和磁性質(垂直異向性及垂直交換偏壓)。而Co/Pt多層膜的結構是以電子束蒸鍍系統來成長，不過由於目前機台組裝與真空度還有一些問題還沒解決，這部份還有待後續的研究。

Part I
Unusual ferromagnetism has been observed in high density free-standing CrSi2(core)/SiO2(shell) nanocables synthesized by atmosphere pressure chemical vapor deposition method without using any metal catalyst, which is in evident contrast to diamagnetic properties of both CrSi2 and SiO2 in bulk. The hexagonal CrSi2 C40 type (P6222) nanowires grows along [0001] direction and is covered with amorphous SiO2, as characterized by high resolution transmission electron microscopy (HRTEM). The supercell used in the first-principles calculation, which include the interface between CrSi2 and amorphous SiO2, was constructed from analyses of HRTEM images. The simulations results indicate that Cr atoms around the interface with an anomalously high magnetization up to about 2 μB/atom, due to distorted /dangling bonds, and are consistent with the magnetic measurements by also considering the roughness and distribution of oxygen around the interface. These results point towards a new way to tune magnetism in core/shell nanowires.

Part II
The underlying antiferromagnetic NiO was prepared using a dual ion beam deposition system. Dual ion beam deposition system contains DC ion source and RF ion source (assisted beam). Change the RF ion source bombardment voltage (VRF=50、75、100、150 and 200V) and the flow rate of oxygen (O2 flow rate=0.5、0.8 and 1 sccm and fixed Ar flow rate =2.5 sccm), to discuss these changes on the growth of NiO films. The surface roughness of NiO films were analyzed by atomic force microscopy, and the crystal structure of the NiO films were characterized with X-ray diffraction at a grazing angle of one degree. To understand whether the underlying growth of NiO films will influence the growth of Co/Pt multilayers and magnetic properties (perpendicular anisotropy and perpendicular exchange bias). The Co/Pt multilayers will prepare by electron beam evaporation system, however, the system has some problems not yet resolved, so these part need further study in the future.

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