一維奈米結構如奈米線、奈米管因為它們獨特的光性、電性和機械性質而引發廣泛的興趣和研究。一維奈米材料特殊的結構性質可以有效率地提升傳輸電性載子的性能，而且這些一維結構非常適合在奈米積體電路上傳輸載子。再者一維奈米結構也具備元件的功能，所以這種一維奈米結構可以在奈米積體電路中當做接線和元件的應用。
三-五族氮化物(如氮化鎵、氮化鎵銦、氮化鎵鋁)都是具有較大能隙的材料，可以應用在光子晶體和電子元件上；例如:在藍光和紫外光範圍的LED應用。氮化鎵是直接能隙的半導體材料，它的能隙是3.4 eV，而且氮與鎵之間的鍵結是非常強的鍵結。由於這種強鍵結的特性使得氮化鎵可以應用在綠、藍和紫外光區範圍的光電材料。
在此論文中，我們專門討論與鎵相關的半導體化合物之奈米結構的製造與其特性分析。此論文包含了下面六個主題: (1) 探討利用有機金屬化學氣相沉積法來合成氮化鎵奈米線的過程，(2) 探討在不需要模板的輔助下利用有機金屬化學氣相沉積法來合成氮化鎵管狀奈米結構，(3) 探討利用有機金屬化學氣相沉積法來製造氮化鎵/碳管/矽/氧化矽 四層結構的奈米纜線，(4) 高產量合成含鎵三元相化合物/碳管 的奈米纜線，(5) 有關含鎵三元相化合物/碳管 奈米纜線的熱性質探討；(6) 利用單一合成步驟來成長立方晶體結構的氮化鎵/碳管 奈米纜線。

One-dimensional nanostructures, such as nanowires and nanotubes, have attracted great attention because of their peculiar optical, electrical and mechanical properties. 1D nanostructures illustrate the smallest dimension structure that can be efficiently transport electrical carriers, and thus are ideally suited to the critical and ubiquitous task of moving charges in integrated nanoscaled systems. Second, 1D nanostructures can also exhibit device function, and thus can be exploited as both the wiring and device elements in architectures for functional nanosystems.
III-V nitrides (GaN, InGaN, AlGaN) are promising wide bandgap materials for photonic and electronic device applications such as LEDs in blue and ultraviolet regions. Gallium nitride is a direct and wide-band-gap (3.4 eV) semiconductor possessing very strong Ga-N bonds. These and some other features make this compound almost an ideal material for green/blue/ultraviolet optoelectronics.
The present thesis focused on the synthesis and characterization of nanostructures of the Ga-related components. The thesis includes the following topics: (1) growth processes of GaN nanowires synthesized by metalorganic chemical vapor deposition, (2) template-free synthesis of tubular nanostructures by metalorganic chemical vapor deposition, (3) synthesis of GaN/CNT/Si/SiOx nanocables by metalorganic chemical vapor deposition, (4) high yield synthesis of Ga-containing oxide/CNT nanocables, (5) thermal properties of Ga-containing oxide/CNT nanocables; and (6) one-step growth of zinc blend GaN@carbon nanotube nanocables.

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Chapter 3
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Chapter 4
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Chapter 5
5.1 Y. Wu, P. Yang, “Germanium Nanowire Growth via Simple Vapor Transport,” Chem. Mater. 12, pp. 605-607 (2000).
5.2 Tevye Kuykendall, Peter Pauzauskie, Peidong Yang, “Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections,” Nano Lett. 3, pp. 1063-1066 (2003).
5.3 X. Duan, C. M. Lieber, “General Synthesis of Compound Semiconductor Nanowires,” Adv. Mater. 12, pp. 298-302 (2000).
5.4 M. H. Huang, Y. Wu, H. Feick, P. Yang, “Synthesis and Electrochemical Polymerization of New Oligothiophene Functionalized Cyclophanes,” Adv. Mater. 13, pp. 113-116 (2000).
5.5 Hongjie Dai, Eric W. Wong, Yuan Z. Lu, Shoushan Fan, Charles M. Lieber, “Synthesis and Characterization of Carbide Nanorods,” Nature 375, pp. 769-771 (1995).
5.6 Wei, J.Q. Jiang, C.L. Wu, D.H. and Wei, B. Q., “Straight Boron Carbide Nanorods Prepared From Carbon Nanotubes,” J. Mater. Chem. 12, pp. 3121-3124 (2002).
5.7 Weiqiang Han, Shoushan Fan, Qunqing Li, Yongdan Hu, “Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined Reaction,” Science 277, pp. 1287-1289 (1997).
5.8 Rodney S. Ruoff, “The Continuing Saga,” Nature 372, p. 731 (1994).
5.9 Wei-Qiang Han, A. Zettl, “GaN Nanorods Coated with Pure BN,” Appl. Phy. Lett. 81, pp. 5051-5053 (2002).
5.10 Wei-qiang Han, Alex Zettl, “An Efficient Route to Graphitic Carbon-Layer-Coated Gallium Nitride Nanorods,” Adv. Mater. 14, pp. 1560-1562 (2002).
5.11 S. Stemmer, Z.Q. Chen, W.J. Zhu, and T.P. Ma, “Electron Energy-Loss Spectroscopy Study of Thin Film Hafnium Aluminates for Novel Gate Dielectrics,” J. Microscopy 210, pp. 74-79 (2003).
5.12 C.C. Ahn and O.L. Krivanek, “EELS Atlas,” Gatan Inc. Warrendale, MA, USA (1983).
5.13 Z.W. Pan, S. Dai, D. B. Beach, N. D. Evans, and D. H. Lowndes, “Gallium-Mediated Growth of Multiwall Carbon Nanotubes,” Appl. Phys. Lett. 82, pp. 1947-1949 (2003).
5.14 B. K. Ridley, “Quantum Processes in Semiconductors,” Clarendon, Oxford (1982).
5.15 Xinwei Zhao, Olaf Schoenfeld, Shuji Komuro, Yoshinobu Aoyagi and Takuo Sugano, “Quantum Confinement in Nanometer-Sized Silicon Crystallites,” Phys. Rev. B, 50, pp. 18654-18657 (1994).
5.16 M. Watanabe, S. Juodkazis, H.B. Sun, S. Matsuo, and H. Misawa, “Luminescence and Defect Formation by Visible and Near-Infrared Irradiation of Vitreous Silica,” Phys. Rev. B, 60, pp. 9959-9964 (1999).
5.17 C. X. Xu and X. W. Sun, “Field Emission from Zinc Oxide Nanopins,” Appl. Phys. Lett. 83, pp. 3806-3808 (2003).
5.18 Q. H. Wang, A. A. Setlur, J. M. Lauerhaas, J. Y. Dai, E. W. Seelig, and R. P. H. Chang, “A Nanotube-Based Field-Emission Flat Panel Display,” Appl. Phys. Lett. 72, pp. 2912-2914 (1998).

Chapter 6
6.1 Jih-Jen Wu, Sai-Chang Liu, Chien-Ting Wu, Kuei-Hsien Chen and Li-Chyong Chen, “Heterostructures of ZnO–Zn Coaxial Nanocables and ZnO Nanotubes,” Appl. Phy. Lett. 81, pp. 1312-1314 (2002).
6.2 Yubao Li, Yoshio Bando and Dmitri Golberg, “Single-Crystalline In2O3 Nanotubes Filled with In,” Adv. Mater. 15, pp. 581-585 (2003).
6.3 Renzhi Ma, Yoshio Bando, and Tadao Sato, “Controlled Synthesis of BN Nanotubes, Nanobamboos, and Nanocables,” Adv. Mater. 14, pp. 366-368 (2002).
6.4 Y. Zhang, K. Suenaga, C. Colliex, and S. Iijima, “Coaxial Nanocable: Silicon Carbide and Silicon Oxide Sheathed with Boron Nitride and Carbon,” Science, 281, pp. 973-975 (1998).
6.5 Wen-Sheng Shi, Hong-Ying Peng, Lu Xu, Ning Wang, Yuan-Hong H. Tang, and Shuit-Tong Lee, “Coaxial Three-Layer Nanocables Synthesized by Combining Laser Ablation and Thermal Evaporation,” Adv. Mater. 12, pp. 1927-1930 (2000).
6.6 D. Ugarte, A. Châtelain, and W. A. de Heer, “Nanocapillarity and Chemistry in Carbon Nanotubes,” Science, 274, pp. 1897-1900 (1996).
6.7 Weiqiang Han, Shoushan Fan, Qunqing Li, and Yongdan Hu, “Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined Reaction,” Science, 277, pp. 1287-1289 (1997).
6.8 Demoncy N., O. Stephan, N. Brun, C. Colliex, A. Loiseau and H. Pascard, “Filling Carbon Nanotubes with Metals by The Arc-Discharge Method: the Key Role of Sulfur,” Eur. Phys. J. B 4, pp. 147-151 (1998).
6.9 G. Schmitz, P. Gassmann and R. Franchy, “A Combined Scanning Tunneling Microscopy and Electron Energy Loss Spectroscopy Study on The Formation of Thin, Well-Ordered β-Ga2O3 Films on CoGa(001),” J. Appl. Phys. 83, pp. 2533-2538 (1998).
6.10 G.Y. Zhang, X.C. Ma, D.Y. Zhang, and E.G. Wang, “Polymerized Carbon Nitride Nanobells,” J. Appl. Phys. 91, pp. 9324-9332 (2002).
6.11 S. C. Tsang, P. J. F. Harris and M. L. H. Green, “Thinning and Opening of Carbon Nanotubes by Oxidation Using Carbon Dioxide,” Nature, 362, pp. 520-522 (1993).
6.12 P. M. Ajayan, T. W. Ebbesen, T. Ichihashi, S. Iilima, K. Tanigaki, and H. Hiura, “Opening Carbon Nanotubes With Oxygen and Implications for Filling,” Nature, 362, pp. 522-524 (1993).
6.13 C.C. Ahn and O.L. Krivanek, “EELS Atlas,” Gatan Inc. Warrendale, MA, USA (1983).
6.14 K. Suenaga, C. Colliex and S. Iijima, “In Situ Electron Energy-Loss Spectroscopy on Carbon Nanotubes During Deformation,” Appl. Phy. Lett. 78, pp. 70-72 (2001).
6.15 K. S. A. Butcher, H. Timmers, Afifuddin and Patrick P.-T. Chen, “Crystal Size and Oxygen Segregation for Polycrystalline GaN,” J. Appl. Phys. 92, pp. 3397-3403 (2002).
6.16 Toshinari Ichihashi, Jun-ichi Fujita, Masahiko Ishida and Yukinori Ochiai, “In Situ Observation of Carbon-Nanopillar Tubulization Caused by Liquidlike Iron Particles,” Phy. Rev. Lett. 92, pp. 2157021-2157024 (2004).
6.17 S. IIjima and T. Ichihashi, “Structural Instability of Ultrafine Particles of Metals,” Phy. Rev. Lett. 56, pp. 616-621 (1986).
6.18 Ph. Buffat and J-P. Borel, “Size Effect on The Melting Temperature of Gold Particles,” Phy. Rev. A, 13, pp. 2287-2298 (1976).
6.19 P. M. Ajayan and S. Iijima, “Capillarity-Induced Filling of Carbon Nanotubes,” Nature, 361, pp. 333-335 (1993).

Chapter 7
7.1 Jih-Jen Wu, Sai-Chang Liu, Chien-Ting Wu, Kuei-Hsien Chen and Li-Chyong Chen, “Heterostructures of ZnO–Zn Coaxial Nanocables and ZnO Nanotubes,” Appl. Phy. Lett. 81, pp. 1312-1314 (2002).
7.2 Yubao Li, Yoshio Bando and Dmitri Golberg, “Single-Crystalline In2O3 Nanotubes Filled with In,” Adv. Mater. 15, pp. 581-585 (2003).
7.3 Renzhi Ma, Yoshio Bando, and Tadao Sato, “Controlled Synthesis of BN Nanotubes, Nanobamboos, and Nanocables,” Adv. Mater. 14, pp. 366-368 (2002).
7.4 Y. Zhang, K. Suenaga, C. Colliex, and S. Iijima, “Coaxial Nanocable: Silicon Carbide and Silicon Oxide Sheathed with Boron Nitride and Carbon,” Science, 281, pp. 973-975 (1998).
7.5 Wen-Sheng Shi, Hong-Ying Peng, Lu Xu, Ning Wang, Yuan-Hong H. Tang, and Shuit-Tong Lee, “Coaxial Three-Layer Nanocables Synthesized by Combining Laser Ablation and Thermal Evaporation,” Adv. Mater. 12, pp. 1927-1930 (2000).
7.6 D. Ugarte, A. Châtelain, and W. A. de Heer, “Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined Reaction,” Science, 274, pp. 1897-1899 (1996).
7.7 Weiqiang Han, Shoushan Fan, Qunqing Li, and Yongdan Hu, “Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined Reaction,” Science, 277, pp. 1287-1289 (1997).
7.8 Demoncy N., O. Stephan, N. Brun, C. Colliex, A. Loiseau and H. Pascard, “Filling Carbon Nanotubes with Metals by the Arc-Discharge Method: the Key role of Sulfur,” Eur. Phys. J. B 4, pp. 147-150 (1998).
7.9 G. Schmitz, P. Gassmann and R. Franchy, “A Combined Scanning Tunneling Microscopy and Electron Energy Loss Spectroscopy Study on The Formation of Thin, Well-Ordered β-Ga2O3 Films on CoGa(001),” J. Appl. Phys. 83, pp. 2533-2538 (1998).
7.10 C.C. Ahn and O.L. Krivanek, “EELS Atlas,” Gatan Inc. Warrendale, MA USA (1983).
7.11 K. Suenaga, C. Colliex and S. Iijima, “In Situ Electron Energy-Loss Spectroscopy on Carbon Nanotubes During Deformation,” Appl. Phy. Lett. 78, pp. 70-72 (2001).
7.12 Toshinari Ichihashi, Jun-ichi Fujita, Masahiko Ishida and Yukinori Ochiai, “In Situ Observation of Carbon-Nanopillar Tubulization Caused by Liquidlike Iron Particles,” Phy. Rev. Lett. 92, pp. 2157021-2157024 (2004).
7.13 S. IIjima and T. Ichihashi, “Structural Instability of Ultrafine Particles of Metals,” Phy. Rev. Lett. 56, pp. 616-621 (1986).
7.14 Ph. Buffat and J-P. Borel, “Size Effect on The Melting Temperature of Gold Particles,” Phy. Rev. A 13, pp. 2287-2298 (1976).
7.15 Z. R. Dai, Z. W. Pan and Z. L. Wang, “Gallium Oxide Nanoribbons and Nanosheets,” J. Phys. Chem. B 106, pp. 902-904 (2002).

Chapter 8
8.1 Jih-Jen Wu, Sai-Chang Liu, Chien-Ting Wu, Kuei-Hsien Chen and Li-Chyong Chen, “Heterostructures of ZnO–Zn Coaxial Nanocables and ZnO Nanotubes,” Appl. Phy. Lett. 81, pp. 1312-1314 (2002).
8.2 Yubao Li, Yoshio Bando and Dmitri Golberg, “Single-Crystalline In2O3 Nanotubes Filled with In,” Adv. Mater. 15, pp. 581-585 (2003).
8.3 Renzhi Ma, Yoshio Bando, and Tadao Sato, “Controlled Synthesis of BN Nanotubes, Nanobamboos, and Nanocables,” Adv. Mater. 14, pp. 366-368 (2002).
8.4 Y. Zhang, K. Suenaga, C. Colliex, and S. Iijima, “Coaxial Nanocable: Silicon Carbide and Silicon Oxide Sheathed with Boron Nitride and Carbon,” Science, 281, pp. 973-975 (1998).
8.5 Wen-Sheng Shi, Hong-Ying Peng, Lu Xu, Ning Wang, Yuan-Hong H. Tang, and Shuit-Tong Lee, “Coaxial Three-Layer Nanocables Synthesized by Combining Laser Ablation and Thermal Evaporation,” Adv. Mater. 12, pp. 1927-1930 (2000).
8.6 Hongjie Dai, Eric W. Wong, Yuan Z. Lu, Shoushan Fan, Charles M. Lieber, “Synthesis and Characterization of Carbide Nanorods,” Nature 375, pp. 769-771 (1995).
8.7 Wei, J.Q. Jiang, C.L. Wu, D.H. and Wei, B. Q., “Straight Boron Carbide Nanorods Prepared from Carbon Nanotubes,” J. Mater. Chem. 12, pp. 3121-3124 (2002).
8.8 Weiqiang Han, Shoushan Fan, Qunqing Li, Yongdan Hu, “Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined Reaction,” Science 277, pp. 1287-1289 (1997).
8.9 Rodney S. Ruoff, “The Continuing Saga,” Nature 372, 731-733 (1994).
8.10 Wei-qiang Han, Alex Zettl, “An Efficient Route to Graphitic Carbon-Layer-Coated Gallium Nitride Nanorods,” Adv. Mater. 14, pp. 1560-1562 (2002).
8.11 C. Y. Zhi, D. Y. Zhong and E. G. Wang, “GaN-Filled Carbon Nanotubes: Synthesis and Photoluminescence”, Chem. Phys. Lett. 381, pp. 715-719 (2003).
8.12 O. Brandt, H. Yang, H.r Kostial, and K. H. Ploog, “High p-Type Conductivity in Cubic GaN/GaAs(113)A by Using Be as the Acceptor and O as the Codopant”, Appl. Phys. Lett. 69, pp. 2707-2709 (1996).
8.13 X. Sun, H. Yang, L. Zheng, D. Xu, J. Li, Y. Wang, G. Li and Z. Wang, “Stability Investigation of Cubic GaN Films Grown by Metalorganic Chemical Vapor Deposition on GaAs (001)”, Appl. Phys. Lett. 74, pp. 2827-2829 (1999).
8.14 S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, and Y. L. Wang, C. W. Hsu, C. H. Shen, and L. C. Chen and C. C. Chen, “Hexagonal-to-Cubic Phase Transformation in GaN Nanowires by Ga+ Implantation”, Appl. Phys. Lett. 84, pp. 5473-5475 (2004).
8.15 J. Q. Hu, Y. Bando, J. H. Zhan, F. F. Xu, T. Sekiguchi, D. Golberg, “Growth of Single-Crystalline Cubic GaN Nanotubes with Rectangular Cross-Sections”, Adv. Mater. 16, pp. 1465-1468 (2004).
8.16 Jolin A. Jegier, Stuart McKernan, Andrew P. Purdy, and Wayne L. Gladfelter, “Ammonothermal Conversion of Cyclotrigallazane to GaN: Synthesis of Nanocrystalline and Cubic GaN from [H2GaNH2]3”, Chem. Mater. 12, pp. 1003-1010 (2000).
8.17 S. C. Tsang, P. J. F. Harris and M. L. H. Green, “Thinning and Opening of Carbon Nanotubes by Oxidation Using Carbon Dioxide,” Nature, 362, pp. 520-522 (1993).
8.18 P. M. Ajayan, T. W. Ebbesen, T. Ichihashi, S. Iilima, K. Tanigaki, and H. Hiura, “Opening Carbon Nanotubes With Oxygen and Implications for Filling,” Nature, 362, pp. 522-524 (1993).
8.19 X. Ma, E. G. Wang, R. D. Tilley, D. A. Jefferson and W. Zhou, “Size-Controlled Short Nanobells: Growth and Formation Mechanism”, Appl. Lett. Phys. 77 , pp. 41364138 (2000).
8.20 D. Y. Zhong, S. Liu, G. Zhang and E. G. Wang, “Large-Scale Well Aligned Carbon Nitride Nanotube Films: Low Temperature Growth and Electron Field Emission”, J. Appl. Phys. 89, pp. 5939-5943 (2001).
8.21 C.C. Ahn and O.L. Krivanek, “EELS Atlas,” Gatan Inc. Warrendale, MA, USA (1983).
8.22 K. Suenaga, C. Colliex and S. Iijima, “In Situ Electron Energy-Loss Spectroscopy on Carbon Nanotubes During Deformation”, Appl. Phy. Lett. 78, pp. 70-72 (2001).
8.23 S. Amelinckx, X. B. Zhang, D. Bernaerts, X. F. Zhang, V. Ivanov and J. B. Nagy, “A Formation Mechanism for Catalytic Grown Helix Shaped Graphite Nanotubes”, Science, 265, pp. 635-637 (1994).
8.24 Zheng Wei Pan, Sheng Dai and David B. Beach, “Gallium-Mediated Growth of Multiwall Carbon Nanotubes”, Appl. Phy. Lett. 82, pp. 1947-1949 (2003).
8.25 T.B. Massalski, H. Okamoto, P.R. Subramanian and L. Kacprzak, "2nd Edition, Binary Alloy Phase Diagrams," ASM International, Materials Park, Ohio, USA (1990).
8.26 K. W. Wong, X. T. Zhou, Frederick C. K. Au, H. L. Lai, C. S. Lee, and S. T. Lee, “Field-Emission Characteristics of SiC Nanowires Prepared by Chemical-Vapor Deposition”, Appl. Phys. Lett. 75, pp. 2918-2920 (1999).
8.27 C. X. Xu and X. W. Sun, “Field Emission from Zinc Oxide Nanopins”, Appl. Phys. Lett. 83, pp. 3806-3808 (2003).
8.28 Q. H. Wang, A. A. Setlur, J. M. Lauerhaas, J. Y. Dai, E. W. Seelig, and R. P. H. Chang, “A Nanotube-Based Field-Emission Flat Panel Display”, Appl. Phys. Lett. 72, pp. 2912-2914 (1998).
10.1 M. S. Dresselhaus, G. Dresselhaus and P. Avouris, “Carbon Nanotubes: Synthesis, Structure, Properties, and Applications,” Springer, Berlin (2001).
10.2 J. Chen, M. A. Reed, A. M. Rawlett, and J. M. Tour, “Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic Device”, Science, 286, pp. 1550-1552 (1999).
10.3 H. B. Peng, T. G. Ristroph, G. M. Schurmann, G. M. King, and J. Yoon, “Patterned Growth of Single-Walled Carbon Nanotube Arrays from a Vapor-Deposited Fe Catalyst”, Appl. Phys. Lett. 83, pp. 4238-4240 (2003).
10.4 Alireza Nojeh, Ant Ural, R. Fabian Pease and Hongjie Dai, “Electric-Field-Directed Growth of Carbon Nanotubes in Two Dimensions”, J. Vac. Sci. Technol. B, 22, pp. 3421-3425 (2004).