利用自洽法研究AlGaN/GaN異質介面的電子特性｜國立清華大學博碩士論文庫

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研究生：	蘇宣泰 Hsuan-Tai Su
論文名稱：	利用自洽法研究AlGaN/GaN異質介面的電子特性 A self-consistent study of the electronic properties of an AlGaN/GaN hetero-junction
指導教授：	林叔芽 Shu-Ya Lin
口試委員:
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering
論文出版年：	2006
畢業學年度：	94
語文別：	中文
論文頁數：	40
中文關鍵詞：	自洽、異質介面
相關次數：	點閱：2 下載：0
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由薛丁格以及帕松方程式的自洽運算，可以找出由AlGaN/GaN所構成之HEMT其內的二維電子氣體密度。在AlGaN/GaN與其他Ⅲ-Ⅴ族最大的不同，由於晶格大小的差異所造成不可忽略的壓電效應，這個效應是需要被考慮進去的。我們藉由改變摻雜濃度與元件本身尺寸的調變，可以觀察其二維電子氣體密度的變化。由於是採用單一電子的等效模型，在考慮多體效應下，我們必須加入交換-相干 (exchange-correlation)的修正。另外我們運用一個簡單的模型，來探討此HEMT內的飽和電壓與其飽和電流。

Density of the two dimensional electronic gas formed on the interface AlGaN/GaN of HEMT calculated through solving the Poisson and Schrödinger equations self-consistently. Different from other Ⅲ-Ⅴ compounds, due to the difference of lattice constants there is a considerable piezoelectric effect exists in this interface. We can vary the 2DEG density by moderating the size and the doping of the device. The many-body effect is considered by incorporating the exchange-correlation energy to the effective single electron model used for the calculations. Furthermore we will use a simple model to discuss the saturation voltage and the saturation current in this device.

第一章 : 序論.......................................................................................1
第二章 : 理論方法..............................................................................3
2-1 AlGaN/GaN高速電子遷移率電晶體................................................3
  2-1.1壓電效應.......................................................................................6
  2-1.2 AlGaN/GaN介面結構與特性......................................................7
2-2 數值計算...........................................................................................11
  2-2.1有限差分法( Finite difference method ) ....................................12
  2-2.2 等效質量法( Effective method ) ..............................................13
  2-2.3 一般二維電子氣體密度的估算................................................14
2-3 交換-相干修正( Exchange-correlation ) .......................................15
2-4 飽和電壓與電流...............................................................................16
第三章 : 結果與討論.......................................................................21
3-1 AlGaN材料特性...............................................................................21
  3-1.1 壓電效應的影響........................................................................22
  3-1.2 barrier厚度的影響......................................................................25
  3-1.3 摻雜濃度的關係........................................................................26
  3-1.4與一般估算法的比較.................................................................27
3-2交換-相干修正的影響.......................................................................29
3-3飽和電壓與電流的關係....................................................................30
  3-3.1 飽和電壓....................................................................................30
  3-3.2 飽和電流....................................................................................32
第四章 : 結論.........................................................................................34
附錄.........................................................................................................36
參考文獻................................................................................................39

                                

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