本研究主要為利用TSMC 0.18µm 1P6M CMOS製程平台，搭配金屬濕蝕刻製程以及高分子沉積封腔製程來完成電容式絕對型氣壓壓力感測器。本元件的主要設計目的為，運用電容式壓力感測器具有高靈敏度的特色來達成壓力感測，估計可有效發揮於手機或是平板等個人隨行助理系統上。
本電容式壓力感測器的設計特色有四：(1)設計雙邊感測的變形薄膜來改良一般的傳統電容式壓力感測器，(2)利用不同堆疊厚度的金屬犧牲層，經過金屬濕蝕刻後完成兩種不同寬度的空腔結構；(3)同時在薄膜邊緣設計溝槽結構來改變感測器薄膜的抗彎剛度，使其薄膜變形程度可以進一步的增加，(4)最後沉積高分子材料(Parylene-C)來完成封閉空腔，實現壓力感測器元件之設計。

In this study, we present a new high sensitivity absolute capacitive pressure sensor that it is estimated to exert on your phone or tablet and other personal assistant system. The design features of this capacitive pressure sensor are coating Parylene-C to accomplish two kinds of chambers and using double deformable sensing diaphragms to enhance sensor’s sensitivity. Besides the double deformable sensing diaphragms, the use of trenches can also improve the sensitivity of capacitive pressure sensor by reducing diaphragm’s flexural rigidity. The structure of pressure sensor was made through TSMC 0.18µm 1P6M CMOS-MEMS process. Not only we can effectively use the multilayer film stack features to complete the study, but also we put forward the possibility to develop other pressure sensors by using this CMOS-MEMS platform.

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