本論文旨在探討矽/摻鋁氧化鋅異質接面之研究，此接面可做為一光二極體元件。其中選用摻鋁氧化鋅做為接面材料，主要利用它作為一透明多功能導電電極(multifunctional conducting electrode)，具有導電、抗反射和與n型矽基板為蕭特基接面可產生光電子及載子分離等特性。
而為了使元件的光學特性更好，我們於矽基板上製做出奈米柱的結構，使用的製程方法為金侵入蝕刻法(Intruded Gold Nanoclusters, INC)，在矽基板上簡易、快速的蝕刻出奈米柱，藉由改變基板表面的光學行為達到元件的良好抗反射效果。接著由於原子層沉積技術披覆性佳，因此我們利用此技術在奈米柱結構上成長一層很薄的摻鋁氧化鋅，使摻鋁氧化鋅能夠良好的披覆於奈米柱結構，藉此達到在固定面積下具有更高密度的3D蕭特基接面。
論文中亦會去探討此接面的材料和光學特性，以及與傳統蕭特基接面在照光下的光電性質比較。

This thesis is about silicon / aluminum-doped zinc oxide heterojunction, which can be applied as a photodiode device. Aluminum-doped zinc oxide is chosen to be the interface material, which is mainly used as a transparent conducting multifunctional electrode. It contains the characteristics of conductivity, anti-reflection, and Schottky interface with the n-type silicon substrate which can generate and separate the carriers .
In order to improve the optical characteristic, we fabricated a nano-rods structure on a silicon substrate by the method of Intruded Gold Nanoclusters (INC), which can etch silicon substrate fast and simply to achieve a good anti-reflective layer by changing the optical behavior of the substrate surface. Then we used the atomic layer deposition (ALD) technology to grow a layer of aluminum-doped zinc oxide on the nano-rods surface. This fabrication can let aluminum-doped zinc oxide cover nano-rods structure well, and obtain a 3D Schottky junction with high density under a fixed area.
Therefore, the materiel properties, optical properties, electrical properties of this heterojunction are discussed.

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