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研究生: 吳啓賓
Wu, Chi-Pin
論文名稱: 射頻高功率換流器於低溫電漿滅菌應用
Application of RF High Power Inverter in Low Temperature Plasma Sterilization
指導教授: 吳財福
Wu, Tsai-Fu
口試委員: 邱煌仁
Chiu, Huang-Jen
林長華
Lin, Chang-Hua
沈志隆
Shen, Chih-Lung
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 電機工程學系
Department of Electrical Engineering
論文出版年: 2021
畢業學年度: 109
語文別: 中文
論文頁數: 91
中文關鍵詞: 電漿低溫電漿滅菌法Class-D換流器Class-E換流器13.56 MHz阻抗匹配GaN
外文關鍵詞: matching circuit, plasma sterilization, Class-E inverter
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  • 本研究旨在研製一射頻電漿源,以產生電漿,作為提供低溫電漿滅菌。低溫電漿滅菌法相較於其他滅菌法擁有許多優點,包括:滅菌週期短,一次的滅菌流程僅需要55~75分鐘;不須在高溫環境下殺菌,其工作溫度可在50 °C以下進行,適用於不耐熱及不耐濕的醫療器材;最後,滅菌流程後不會產生有毒副產物,是一種非常乾淨的滅菌法。
    本研究根據所需的電氣規格來製作射頻電源換流器,其電路架構選用Class-D半橋式LCC串並聯諧振換流器與Class-E諧振換流器,其開關切換頻率皆為13.56 MHz,並使電路的諧振頻率低於切換頻率,以達到零電壓切換(ZVS),將開關切換損失降至最低。此外,為了將電路和低溫電漿滅菌腔體做系統整合,規劃一套匹配電路的設計方法,目的為將腔體阻抗匹配至電路阻抗,以達到最大功率傳輸。在避免產生功率反射或損耗的問題時,也可以保護電路受到反射功率而損毀的情況發生。
    本研究所採用的負載分為兩種:50 Ω純電阻和低溫電漿滅菌腔體,前者為許多射頻應用負載端之常見的阻抗值,而後者則是使研製之換流器能夠與實際應用結合,以便做系統整合。
    本論文的主要貢獻包含:(1)研製一使用新型氮化鎵功率開關之Class-D諧振換流器,並輸出頻率為13.56 MHz且THD值小於1.5 %之正弦波,(2)說明本研究中所使用的功率開關之寄生電容C_oss,並其對於Class-D諧振換流器產生之影響,(3)規劃一套低溫電漿滅菌腔體的等效阻抗量測方法,並以此設計匹配電路,以及(4)研製一Class-E諧振換流器,並以低溫電漿滅菌腔體作為負載,成功實現功率零反射且產生電漿。


    This study focuses on the design and implementation of an RF resonant inverter with a matching circuit to generate plasma for plasma sterilization system. The circuit topology is a Class-D series parallel resonant inverter with the operating frequency of 13.56 MHz. Through the resonant characteristics of the LCC network, the switch can operate with soft-switching, reducing switching losses significantly. This inverter is operated at a constant frequency, and the output power can be adjusted by varying input dc voltages.
    Two types of loads are used as the output of the system in this study. One is a precise 50-ohm resistance, the other is the chamber of a plasma sterilization system. Additionally, to alleviate the problem of reactive power and switching losses caused by the sterilization chamber, this research also introduces an impedance matching circuit to match the chamber load to 50 Ω.
    The main contributions of this research include: (1) developing a Class-D inverter using GaN power devices as the switches, and generating 13.56 MHz sinusoidal output waveforms with THD less than 1.5 %, (2) explaining the influence of switch parasitic capacitance on Class-D circuits, (3) designing a set of sterilization chamber load measurement method, and on this basis, design a matching circuit, and(4) developing a Class-E inverter with sterilization chamber as load, achieving the generation of plasma.

    摘要 i Abstract ii 誌謝 iii 總目錄 iv 圖目錄 vii 表目錄 xii 第一章 緒論 1 1.1 研究背景與動機 1 1.2電漿回顧 1 1.3 電漿源回顧 3 1.3.1 直流放電 3 1.3.2 直流脈衝型放電 4 1.3.3 射頻放電 5 1.3.4微波放電 6 1.4 低溫電漿滅菌法回顧 7 1.5 諧振轉換器回顧 8 1.5.1 硬切換特性 9 1.5.2 軟切換特性 10 1.5.3 諧振轉換器特性 12 第二章 系統架構與設計 17 2.1功率放大器 17 2.2 Class-D換流器 19 2.2.1諧振槽選用 19 2.2.2 等效串聯諧振網絡 22 2.2.3 元件參數設計 24 2.2.4 損耗分析 29 第三章 硬體周邊電路設計 31 3.1 輔助電源 31 3.2 電壓線性調變電路 33 3.3 類比除頻電路 33 3.4 開關責任比率調變電路 35 3.5 訊號隔離電路 37 3.5.1脈衝變壓器電路 37 3.5.2 光耦合電路 38 3.5.3 數位隔離電路 38 3.6 開關驅動電路 40 3.7 同軸電纜(Coaxial cable) 41 3.8 負載 43 第四章 硬體電路設計 47 4.1 Class-D換流器系統架構與規格 47 4.2 系統參數設計 48 4.2.1系統增益計算 48 4.2.2 諧振電路元件參數計算 48 4.2.3 元件應力計算 49 4.2.4 諧振電感製作與比較 52 4.2.5 怠滯時間(Dead time) 53 4.2.6損耗推估 55 4.3匹配電路設計 57 第五章 電路模擬與實作量測 61 5.1 實務考量 65 5.1.1 寄生電感的影響 65 5.1.2 訊號隔離器選用 69 5.1.2 傳播延遲 70 5.2 模擬與實測驗證 73 5.2.1 以50 Ω作為負載 74 5.2.2 以電漿腔體作為負載 79 第六章 結論與未來展望 88 6.1 結論 88 6.2 未來研究方向 89 參考文獻 90

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