由於原子層化學氣相沉積法(Atomic Layer Chemical Vapor Deposition，ALCVD)具有極佳的厚度控制能力、均勻覆蓋能力以及低溫製程等優點，所以為沉積薄膜的方法中極佳的選擇。
本實驗將採用ALCVD以TEMAH做為Hf的金屬前驅物，D2O做為氧化劑，沉積HfO2，以La(iPr2-FMD)3做為La的金屬前驅物，O2電漿做為氧化劑，沉積La2O3，製備HfO2/La2O3/HfO2 high-k疊層。
實驗設計將製備三種具不同La2O3位置的HfO2/La2O3/HfO2 high-k疊層，並分別處以PDA700℃及PDA900℃熱處理，熱處理後使用E-gun沉積Ti上電極，RF sputter沉積Pt下電極，製備成MOS電容進行電性量測。
實驗討論部分將藉由材料分析SIMS、IPXRD及XPS探討相同熱處理溫度PDA700℃下，三種具不同La2O3位置的high-k疊層電性上表現不同的原因。在探討完PDA700℃的情況後，再將PDA900℃所得結果與PDA700℃結果做比較，討論在同一結構下，造成兩種不同熱處理溫度具不同電性表現的原因。

[1] G. E. Moore, "Cramming more components onto integrated circuits," Electronics, vol. 38, pp. 114-117, 1965.
[2] V. Narayanan, V. K. Paruchuri, N. A. Bojarczuk, B. P. Linder, B. Doris, Y. H. Kim, S. Zafar, J. Stathis, S. Brown, J. Arnold, M. Copel, M. Steen, E. Cartier, A. Callegari, P. Jamison, J. P. Locquet, D. L. Lacey, Y. Wang, P. E. Batson, P. Ronsheim, R. Jammy, M. P. Chudzik, M. Ieong, S. Guha, G. Shahidi, and T. C. Chen, "Band-Edge High-Performance High-k /Metal Gate n-MOSFETs using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond," Symposium on VLSI Technology Digest of Technical Papers, 2006.
[3] B. J. O'Sullivan, R. Mitsuhashi, G. Pourtois, M. Aoulaiche, M. Houssa, N. Van der Heyden, T. Schram, Y. Harada, G. Groeseneken, P. Absil, S. Biesemans, T. Nakabayashi, A. Ikeda, and M. Niwa, "Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes," Journal of Applied Physics, vol. 104, 2008.
[4] S. Toyoda, H. Kamada, T. Tanimura, H. Kumigashira, M. Oshima, T. Ohtsuka, Y. Hata, and M. Niwa, "Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO2/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside," Applied Physics Letters, vol. 96, 2010.
[5] C. Y. Kang, P. D. Kirsch, B. H. Lee, H. H. Tseng, and R. Jammy, "Reliability of La-Doped Hf-Based Dielectrics nMOSFETs," Ieee Transactions on Device and Materials Reliability, vol. 9, pp. 171-179, 2009.
[6] H. S. Jung, J. H. Lee, S. K. Han, Y. S. Kim, H. J. Lim, M. J. Kim, S. J. Doh, M. Y. Yu, N. I. Lee, H. L. Lee, T. S. Jeon, H. J. Cho, S. B. Kang, S. Y. Kim, I. s. park, D. Kim, H. S. Baik, and Y. S. Chung, "A Highly Manufacturable MIPS (Metal Inserted Poly-Si Stack) Technology with Novel Threshold Voltage Control," Symposium on VLSI Technology Digest of Technical Papers, 2005.
[7] H. Arimura, Y. Oku, M. Saeki, N. Kitano, T. Hosoi, T. Shimura, and H. Watanabe, "Fabrication of advanced La-incorporated Hf-silicate gate dielectrics using physical-vapor-deposition-based in situ method and its effective work function modulation of metal/high-k stacks," Journal of Applied Physics, vol. 107, 2010.
[8] X. P. Wang, H. Y. Yu, M. F. Li, C. X. Zhu, S. Biesemans, A. Chin, Y. Y. Sun, Y. P. Feng, A. Lim, Y. C. Yeo, W. Y. Loh, G. Q. Lo, and D. L. Kwong, "Wide V-fb and V-th tunability for metal-gated MOS devices with HfLaO gate dielectrics," Ieee Electron Device Letters, vol. 28, pp. 258-260, 2007.
[9] Y. Yamamoto, K. Kita, K. Kyuno, and A. Toriumi, "Study of la-induced flat band voltage shift in Metal/HfLaOx/SiO2/Si capacitors," Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, vol. 46, pp. 7251-7255, 2007.
[10] R. Chou, Intel, ICSTCT 2004 presentation.
[11] B. Cheng, M. Cao, R. Rao, A. Inani, P. Vande Voorde, W. M. Greene, J. M. C. Stork, Z. Yu, P. M. Zeitzoff, and J. C. S. Woo, "The Impact of High-k Gate Dielectrics and Metal Gate Electrodes on Sub-100 nm MOSFETs," vol. 46, pp. 1537-1544, 1999.
[12] J. Robertson and P. W. Peacock, "High-k Gate Dielectrics," Institute of Physics, 2003.
[13] 邱彥凱, "原子層化學氣相沉積之高介電薄膜於金屬-氧化物-金屬與金屬-絕緣層-金屬結構下之應用," 清華大學博士論文, 2007.
[14] 簡銘萱, "探討利用原子層化學氣相沉積法鍍製Al2O3、HfO2之高介電結構薄膜，應用在奈米尺度世代DRAM影響之電性研究," 清華大學碩士論文, 2007.
[15] 李清楠, "下電極材料對原子層化學氣相沉積Al2O3高介電薄膜櫻用在奈米尺度世代DRAM影響之研究," 清華大學碩士論文, 2005.
[16] 李雅明, "固態電子學," 全華科技圖書, 1995.
[17] M. Ritala, H. Saloniemi, M. Leskela, T. Prohaska, G. Friedbacher, and M. Grasserbauer, "Introducing atomic layer epitaxy for the deposition of optical thin films," Thin Solid Films, vol. 286, p. 54, 1996.
[18] R. Matero, A. Rahtu, M. Ritala, M. Leskela, and T. Sajavaara, "Effect of water dose on the atomic layer deposition rate of oxide thin films," Thin Solid Films, vol. 368, pp. 1-7, 2000.
[19] S. Haukka, Eeva-Liisa, and T. untola, "Analysis of hydroxyl group controlled atomic layer deposition of hafnium precursors dioxide from hafnium tetrachloride and water," Journal of Applied Physics, vol. 95, p. 4777, 2004.
[20] H. S. Nalwa, "Handbook of thin film materials : Vol. 1 Deposition and processing of thin films," Academic Press, 2002.
[21] M. Houssa, "High-k Gate Dielectrics," Institute of Physics, 2004.
[22] http://www.cns.fas.harvard.edu/research/pdf/ALD_An
_%20Enabler_for_Nanoscience_and_Nanotechnology.pdf.
[23] http://che.cycu.edu.tw/outstanding/material_lab/
material.pdf.
[24] http://proj.moeaidb.gov.tw/eta/Handout/
2004071310.pdf.
[25] J. L. van Hemmen, S. B. S. Heil, J. H. Klootwijk, F. Roozeboom, C. J. Hodson, M. C. M. van de Sanden, and W. M. M. Kessels, "Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor," Journal of The Electrochemical Society, vol. 154, pp. G165-G169, 2007.
[26] A. J. Moulson and J. M. Herbet, "Electroceramics : materials, properties, applications," Chapman and Hall, 1990.
[27] L. L.Hencb and J. K. West, "Principles of Electronic Ceramic," John Wiley and Sons, Ltd, 1990.
[28] M. W. Barsoum, "Fundamentals of Ceramics," McGraw-Hill, Inc., 1997.
[29] W. D. Kingery, H. K. Bowen, and D. R. Uhlmann, "Introduction to ceramics," John Wiley and Sons, Ltd, 1991.
[30] T. Lee, H. K. Ko, J. Ahn, I. S. Park, H. Sim, H. Park, and H. Hwang, "Electrical properties of atomic layer deposited HfO2 gate dielectric film using D2O as oxidant for improved reliability," Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, vol. 45, pp. 6993-6995, 2006.
[31] R. L. Puurunen and W. Vandervorst, "Island growth as a growth mode in atomic layer deposition: A phenomenological model," Journal of Applied Physics, vol. 96, pp. 7686-7695, 2004.
[32] D. A. Neamen, "An Introducton to Semiconductor Devices," 2006.
[33] W. He, L. Zhang, D. S. H. Chan, and B. J. Cho, "Cubic-Structured HfO2 With Optimized Doping of Lanthanum for Higher Dielectric Constant," Ieee Electron Device Letters, vol. 30, pp. 623-625, 2009.
[34] H. H. Hsieh and C. C. Wu, "Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes," Applied Physics Letters, vol. 91, 2007.
[35] M. Baklanov, M. Green, and K. Maex, "Dielectric Films for Advanced Microelectronics," John Wiley and Sons, Ltd, 2007.
[36] W. J. Maeng, W. H. Kim, and H. Kim, "Flat band voltage (V-FB) modulation by controlling compositional depth profile in La2O3/HfO2 nanolaminate gate oxide," Journal of Applied Physics, vol. 107, 2010.