簡易檢索 / 詳目顯示

研究生: 毛晨馨
Mao, Chen Hsing
論文名稱: 鉑金屬層對矽晶圓直接接合之研究
指導教授: 胡塵滌
Hu, Chen-Ti
口試委員: 吳錫侃
楊聰仁
李三保
學位類別: 碩士
Master
系所名稱: 工學院 - 材料科學工程學系
Materials Science and Engineering
論文出版年: 2013
畢業學年度: 101
語文別: 中文
論文頁數: 104
中文關鍵詞: 晶圓接合鉑金屬層直接接合表面處理
外文關鍵詞: Wafer Bonding, Pt film, Direct Bonding, UV/O3
相關次數: 點閱:2下載:0
分享至:
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報
  • 本論文將經過溼式化學清洗過(去除原生氧化層)之矽晶圓表面濺鍍鉑金屬層,經過表面清洗及表面改質,直接接合與施壓退火,接合後晶圓對探討接合之強度、電性以及接合界面性質。
    將已鍍製鉑金屬層之晶圓,經過不同溼式化學清洗,觀測表面親、疏水性質。加入紫外線臭氧清洗機對鉑晶層表面做改質,並觀察表面親、疏水性質的改變,尋求有關鉑金屬層表面清洗及改質之製程。
    本實驗分為兩個部分,其一於單一矽晶圓表面鍍上鉑金屬層,經過濕式化學表面清洗及紫外線臭氧清洗機表面改質後,與未鍍上金屬層並經化學表面清洗之另一矽晶圓直接接合,於不同氣氛、溫度下做退火處理。探討晶圓對接合後之強度、電性、接合界面之性質變化。
    其二,將兩片矽晶圓皆濺鍍上鉑金屬層,經濕式化學表面清洗以及紫外線臭氧清洗機表面改質後,直接接合,於不同氣氛、溫度、時間下退火處理。比較與討論接合界面性質之變化。


    第一章 前言 1 第二章 文獻回顧 3 2.1晶圓接合簡介 3 2.2晶圓接合之歷史回顧 4 2.3接合機制簡介 6 2.3.1 親水性接合 7 2.3.2 斥水性接合 10 2.4晶圓表面活化簡介 11 2.4.1 Ar+ Beam活化 11 2.4.2 氧電漿(O2 Plasma)活化 12 2.4.3 紫外光臭氧機(UV/Ozone)活化 14 2.5 金屬矽化物簡介 17 2.6 矽化鉑於晶圓接合之文獻回顧 18 2.7 金屬矽化物之應用 20 2.8 晶圓接合之應用 22 2.8.1 同質晶圓接合之應用 23 2.8.2 異質晶圓接合之應用 29 第三章 實驗程序 36 3.1 晶圓表面清洗 36 3.2 晶圓表面沉積金屬層 39 3.3 晶圓表面活化 39 3.4 接合及熱處理步驟 41 3.5 試片代號 42 3.6 實驗分析與儀器介紹 46 3.6.1. 水滴接觸角測試 46 3.6.2. 原子力顯微鏡 48 3.6.3. 半導體參數量測儀 49 3.6.4. 材料萬能試驗機 49 3.6.5. X光繞射分析儀 51 3.6.6. 光學顯微鏡 52 3.6.7. 場發射掃描式顯微鏡 53 3.6.8. 電子微探儀 54 3.6.9. 能量散射光譜儀 55 第四章 結果與討論 56 4.1 矽晶圓表面水滴接觸角量測 56 4.2 鉑金層表面水滴接觸角量測 57 4.3鉑金屬層表面表面粗糙度量測 60 4.4 I-V Curve量測 67 4.4 拉伸測試量測 73 4.5 於不同環境中退火對PtSi生成之影響 79 4.6 在大氣爐中改變退火溫度對晶圓接合電性之影響 88 4.7 改變鉑金屬層厚度對接合性質的影響 90 第五章 結論 98 參考文獻 100

    [1] F. M. d’Heurle,"Silicide interfaces in silicon technology",Journal of Electronic Materials,27,1138-1147,1998
    [2] 吳文癸,"金屬矽化物的研製",奈米通訊,第五卷第二期,1999
    [3] 朱銘清,"提升鍺p+-n接面結構之研究",私立逢甲大學電機工程學系碩士論文,民國九十六年
    [4] L. Dargent, Y. Bogumilowicz, O. Renault, B. Ghyselen, R. Madar and L. Clavelier,"Direct Bonding of Silicon to Platinum",Journal of The Electrochemical Society,158,H255-H260,2011
    [5] J. Haisma,"Contact bonding, including direct-bonding in a historical and recent context of materials science and technology, physics and chemistry: Historical review in a broader scope and comparative outlook",Materials Science and Engineering: R: Reports,vol. 37,pp. 1-60,2002
    [6] R. S. Silke H. Christiansen, Ulrich Go¨sele,"Wafer Direct Bonding: From Advanced Substrate Engineering to Future Applications in Micro/Nanoelectronics",Proceedings of the IEEE,vol. 94,pp. 2060-2106,2006
    [7] R. G. Horn,"Surface Forces and Their Action in Ceramic Materials",Journal of the American Ceramic Society,vol. 73,pp. 1117-1135,1990
    [8] D. T. S. Kai-Tak Wan, Brain R. Lawn,"Fracture and Contact Adhesion Energies of Mica-Mica, Silica-Silica, and Mica-Silica Interfaces in Dry and Moist Atmospheres",Journal of the American Ceramic Society,vol. 75,pp. 667-676,1992
    [9] J. B. Lasky,"Wafer Bonding for silicon-on-Insulator Technologies",Applied Physics Letters,vol. 48,pp. 78-80,1986
    [10] M. Shimbo, K. Furukawa, K. Fukuda and K. Tanzawa,"SILICON-TO-SILICON DIRECT BONDING METHOD",Journal of Applied Physics,60,2987-2989,1986
    [11] K. Y. Ahn, R. Stengl, T. Y. Tan, U. Gosele and P. Smith,"STABILITY OF INTERFACIAL OXIDE LAYERS DURING SILICON-WAFER BONDING",Journal of Applied Physics,65,561-563,1989
    [12] R. G. Q.-Y. Tong, U. Gösele,"Reversible Silicon Wafer Bonding for Surface Protection: Water-Enhanced Debonding",Journal of The Electrochemical Society,vol. 139,pp. L101-L102,1992
    [13] R. M. Hideki Takagi, Teak Ryong Chung,Tadatomo Suga,"Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method",Sensors and Actuators A: Physical,vol. 70,pp. 164-170,1998
    [14] A. Eiji, Hiromichi,Takeshi,Koji,Osamu,Masak,Shigeaki,"Mechanical Properties and Chemical Reactions
    at the Directly Bonded Si–Si Interface",Japanese Journal of Applied Physics,48,011202,2009
    [15] K. M. Norikuni Yabumoto, Yukio Komine,Kazuyuki Saito,"Water-Adsorbed States On Silicon And Silicon-Oxide Surfaces Analyzed By Using Heavy-Water",Japanese Journal of Applied Physics Part 2-Letters,vol. 29,pp. L490-L493,Mar 1990
    [16] T. H. L. Q.‐Y. Tong, U. Gösele,M. Reiche,J. Ramm,E. Beck,"The role of surface chemistry in bonding of standard silicon wafers",Journal of The Electrochemical Society,vol. 144,pp. 384-389,Jan 1997
    [17] G. U. TONG Q.-Y.,"Semiconductor Wafer Bonding: Science and Technology",JOHN WILEY & SONS, INC., USA,1999
    [18] S. Mack, H. Baumann and U. Gösele,"Gas development at the interface of directly bonded silicon wafers: investigation on silicon-based pressure sensors",Sensors and Actuators A: Physical,56,273-277,1996
    [19] Y. J. Chabal, G. S. Higashi, K. Raghavachari and V. A. Burrows,"Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology",Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films,7,2104-2109,1989
    [20] Y. Backlund, K. Ljungberg and A. Soderbarg,"A suggested mechanism for silicon direct bonding from studying hydrophilic and hydrophobic surfaces",Journal of Micromechanics and Microengineering,2,158,1992
    [21] Y. B. Karin Ljungberg, Anders Söderbärg,Mats Bergh,Mats O. Andersson,Stefan Bengtsson,"The Effects of HF Cleaning Prior to Silicon-Wafer Bonding",Journal of The Electrochemical Society,142,1297-1303,Apr. 1995
    [22] K. H. T. Suni, A. Lipsanena,J. Dekker,H. Luoto,M. Kulawski,"Wafer Scale Packaging of MEMS by Using Plasma-Activated Wafer Bonding",Journal of The Electrochemical Society,vol. 153,pp. G78-G82,2006
    [23] J.-P. R. Xuanxiong Zhang,"Low-temperature Wafer Bonding –Optimal O2 Plasma Surface Pretreatment Time",Electrochemical and Solid-State Letters,vol7(8),Jun2004
    [24] K. Choi, S. Ghosh, J. Lim and C. M. Lee,"Removal efficiency of organic contaminants on Si wafer by dry cleaning using UV/O3 and ECR plasma",Applied Surface Science,206,355-364,2003
    [25] C. A. Crider, J. M. Poate, J. E. Rowe, T. T. Sheng and S. D. Ferris,"Effect of impurities on the PtSi--Si interface and the PtSi surface",Journal of Vacuum Science and Technology,17,433-436,1980
    [26] J. C. Lodder, D. J. Monsma, R. Vlutters and T. Shimatsu,"The spin-valve transistor: technologies and progress",Journal of Magnetism and Magnetic Materials,198–199,119-124,1999
    [27] 陳泉瞱,"應用動態刀刃法與荷重元在矽晶圓對直接接合之研究",國立清大學材料科學與工程研究所碩士論文,民國一百零一年
    [28] 清華大學材料科學與工程學系網站",
    [29] R. Schmiedl, V. Demuth, P. Lahnor, H. Godehardt, Y. Bodschwinna, C. Harder, L. Hammer, H. P. Strunk, M. Schulz and K. Heinz,"Oxygen diffusion through thin Pt films on Si(100)",Applied Physics A,62,223-230,1996
    [30] J. Zhu and G. A. Somorjai,"Formation of Platinum Silicide on a Platinum Nanoparticle Array Model Catalyst Deposited on Silica during Chemical Reaction",Nano Letters,1,8-13,2000
    [31] D. Wang, S. Penner, D. S. Su, G. Rupprechter, K. Hayek and R. Schlögl,"Silicide formation on a Pt/SiO2 model catalyst studied by TEM, EELS, and EDXS",Journal of Catalysis,219,434-441,2003
    [32] N. S. Dellas, C. J. Schuh and S. E. Mohney,"Silicide formation in contacts to Si nanowires",Journal of Materials Science,47,6189-6205,2012
    [33] J. M. Andrews and J. C. Phillips,"Chemical Bonding and Structure of Metal-Semiconductor Interfaces",Physical Review Letters,35,56-59,1975
    [34] Stanford University
    [35] S. P. Murarka,"Silicides for VLSI Applications",Elsevier Science,1983
    [36] F. La Via, P. Lanza, O. Viscuso, G. Ferla and E. Rimini,"Dependence of PtSi Schottky diode electrical behaviour on the platinum film thickness and on the annealing process",Thin Solid Films,161,13-20,1988

    無法下載圖示 全文公開日期 本全文未授權公開 (校內網路)
    全文公開日期 本全文未授權公開 (校外網路)

    QR CODE