本篇論文的主要工作內容聚焦於二維半導體成長的大面積製程，使用化學氣相沉積法合成高品質之單層二硫化鉬，並以高溫退火反應法，將預鍍之反應物進行硫化或碲化反應，以合成大面積且均勻的二維半導體。本研究藉由改變參數，深入研究各項製程參數對成長的影響，進一步藉由調控溫度、反應物濃度，以及環境氣氛，以實現二維材料之大面積製程。在本研究中，高溫退火反應(硫化/碲化)法合成的材料，具有相當高的均勻性且製程參數穩定。這個製程的優點在於良好的均勻性、製程容易控制、簡單，能合成出大面積的材料，然而其電性的表現較為不佳，需要一定厚度才能均勻，需要有改善品質的方法或是使用化學氣相沉積法來合成高品質二硫化鉬。

In this research, we used chemical vapor deposition to synthesize monolayer MoS2. Sulfurization and tellurization was used to synthesize scalable size of MoS2、MoTe2 by sulfurizing or tellurizing pre-deposited MoO3 on the substrate.The influence of growth parameters was investigated, such as concentration of precursor vapor、growth temperature and pressure, trying to realize scalable synthesis of two-dimensional semiconductor. The advantages of sulfurization and tellurization were its high uniformity、good controbility. But the mobilities of MoS2 synthesized by Sulfurization were relatively low compared to MoS2 synthesized by chemical vapor deposition.

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