研究生: |
李奕賢 Yi-Hsien Lee |
---|---|
論文名稱: |
鐵酸鉍複鐵式薄膜之晶體成長與分析 Crystal growth and characterizations of multiferroic BiFeO3 thin Films |
指導教授: |
吳振名
Jenn-Ming Wu |
口試委員: | |
學位類別: |
博士 Doctor |
系所名稱: |
工學院 - 材料科學工程學系 Materials Science and Engineering |
論文出版年: | 2005 |
畢業學年度: | 94 |
語文別: | 英文 |
論文頁數: | 209 |
中文關鍵詞: | 複鐵式 、鐵電性 、磁電 、磊晶 、鐵酸鉍 |
外文關鍵詞: | Multiferroic, Ferroelectric, Magnetoelectric, Epitaxial, Bismuth Ferrite |
相關次數: | 點閱:2 下載:0 |
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鐵酸鉍(BiFeO3,BFO)複鐵式材料,具結構、電、磁的序化而同時具有鐵電性(Tc~1100K)及反鐵磁特性(TN~640K),其優異的鐵電/壓電性以及獨特的磁電共存特性,引起廣泛的研究。本文主要研究BFO薄膜之晶體結構、化學組態、電性、磁性及奈米檢測。藉由射頻磁控濺鍍法(RF-magnetron sputtering)低溫製備純鈣鈦礦結晶相之BFO薄膜,隨機晶向,(100)及(111)優選晶向之晶體結構分別於白金基版(Pt/TiOx/SiO2/Si,Pt),鎳酸鑭基板(LaNiO3/Pt/TiOx/SiO2/Si,LNO)及鉛酸鋇基板(BaPbO3/Pt/TiOx/SiO2/Si,BPO)上多晶成長,於鎳酸鑭電極及鐵酸鑭緩衝層之氧化鎂單晶基版(LaNiO3/LaFeO3/MgO)異質磊晶成長(100)指向之磊晶薄膜, 藉由改變基版及底電極材料得到不同晶體結構之純相BFO薄膜。
BFO薄膜之化學組態,明顯受到工作壓力及製程溫度的影響,藉由適當控制製程參數,可得到穩定的薄膜化學組態。並探討薄膜晶向對高優選BFO薄膜於晶體成長、表面形貌、電性及磁性的影響,藉由掃描式穿透顯微鏡之高角度環型暗場顯像術(Scanning Transmission Electron Microscope High-Angle Annular Dark-Field,STEM-HAADF)分析薄膜/電極介面及薄膜化學均勻性。藉由掃描式壓電力顯微鏡 (Scanning Probe Microscopy,SPM),探討奈米尺度下的物性及電性。藉由添加鑭(La)元素,改善薄膜結晶性及表面粗糙度,部分取代鉍原子造成晶格體積的增加,造成介電、鐵電及磁特性的增進。
Multiferroics BiFeO3 (BFO), exhibiting simultaneously ferroelectricity (Tc~1100K) and anti-ferromagnetism (TN~640K), have attracted extensively attention for their coupled electric, magnetic, and structure order parameters in the same phase. The crystal structure, chemical configuration, nanoscale characterization, electric and magnetic properties were investigated is this study. The pure perovskite phase of BFO films were deposited by rf-magnetron sputtering at low processing temperature. The crystal structure of the BFO films was significantly influenced by the substrate and the bottom electrodes. The BFO film was grown with random orientation on Pt/TiOx/SiO2/Si (Pt), whereas highly (100)- and (111)-oriented ones were obtained on LaNiO3/Pt/TiOx/SiO2/Si (LNO) and BaPbO3/Pt/TiOx/SiO2/Si (BPO), respectively. The BFO-based films were hetero-epitaxially grown on the LaNiO3/LaFeO/MgO single crystal substrates.
The chemical configuration of the films, which significantly depended on working pressure and temperature, was enhanced by well-controlled processing parameters. The orientation dependence in the crystal growth, electric properties and magnetic behavior of BFO films were examined. The film/electrode interface and chemical homogeneity of the films were characterized by the scanning transmission electron microscope high-angle annular dark-field imaging (STEM-HAADF). Nanoscale characterization of the BFO films was studied by scanning probe microscopy (SPM). With the partial substitution of lanthanum (La) ions for bismuth ions, the significant enhancement in the dielectric, ferroelectric and magnetic performance of BFO films was attributed to the improved crystallinity, smooth surface, and increased lattice volume.
1. N. A. Hill, J. Phys. Chem. B 104, 6694 (2000).
2. N. A. Hill, A. Filippetti, J. Magn. and Mag. Mater. 242-245, 976 (2002)
3. R. Seshadri and N. A. Hill, Chem. Mater. 13, 2892 (2001)
4. N. Hur, S. Park, P. A. Sharma, J. S. Ahn, S. Guha, and S-W. Cheong, Nature (London) 429, 392 (2004)
5. T. Kimura, T. Goto, H. Schintani, K. Ishizaka. T. Arima, and Y. Tokura, Nature (London) 426, 55 (2003)
6. M. Fiebig, Th. Lottermoser, D. Frohlich, A. V. Golsev, and R. V. Pisarev, Nature (London) 419, 819 (2002)
7. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science 299, 1719 (2003).
8. G. A. Smolenskii and I. E. Chupis, Sov. Phys. Usp. 25, 475 (1982)
9. S. V. Kiselev, R. P. Ozerov, and G. S. Zhadanov, Sov. Phys. 7, 742 (1963)
10. N. N. Krainik et al., Sov. Phys. 8, 654 (1966)
11. I. G. Ismailzade, Soviet Sov. Phys. 11, 747 (1967)
12. C. Michel er al., Solid state comm. 7, 701 (1969)
13. J. R. Teague, R. G.erson, and W. J. James, Solid State Comm. 122, 1073 (1970).
14. S. Y. Yang, F. Zavaliche, L. Mohaddes-Ardabili, V. Vaithyanathan, D. G. Schlom, Y. J. Lee, Y. H. Chu, M. P. Cruz, Q. Zhan, T. Zhao, R. Ramesh, Appl. Phys. Lett. 87, 102903 (2005).
15. F. Bai, J. Wang, M. Wuttig, J. Li, N. Wang, A. P. Pyatakov, A. K. Zvezdin, L. E. Cross, and D. Viehland, Appl. Phys. Lett. 86, 032511 (2005).
16. J. Wang, H. Zheng, Z. Ma, S. Prasertchoung, M. Wuttig, R. Droopad, J. Yu, K. Eisenbeiser, and R. Ramesh, Appl. Phys. Lett. 85, 2574 (2004).
17. J. Li, J. Wang, M. Wuttig, R. Ramesh, H. Zheng, N. Wang, B. Ruette, A. P. Pyatakov, A. K. Zvezdin, and D. Viehland, Appl. Phys. Lett. 84, 5261 (2004).
18. M. M. Kumar, V. R. Palker, K. Srinivas, and S. V. Suryanarayana, Appl. Phys. Lett. 76, 2764 (2000).
19. V. R. Palker, J. John, and R. Pinto, Appl. Phys. Lett. 80, 1628 (2002).
20. V. R. Palker, K. G. Kumara, and S. K. Malik, Appl. Phys. Lett. 84, 2856 (2004).
21. V. R. Palker, D. C. Kundaliya, S. K. Malik, and S. Bhattacharya, Phys. Rev. B 69, 212102 (2004)
22. K. Y. Yun, M. Noda, and M. Okuyama, Appl. Phys. Lett. 83, 3981 (2003).
23. K. Y. Yun, M. Noda, M. Okuyama, H. Saeki, H. Tabata and K. Saito, J. Appl. Phys. 96, 3399 (2004).
24. K. Y. Yun, D. Ricinschi, T. Kanashima, M. Noda, and M. Okuyama, Jpn. J. Appl. Phys. 43, L647 (2004).
25. K. Y. Yun, M. Noda, and M. Okuyama, J. Korean Phys. Soc. 42, S1153 (2003).
26. S. Lakovlev, C. H. Solterbeck, M. Kuhnke, and M. Es-Souni, J. Appl. Phys. 97, 094901 (2005).
27. H. Uchida, R. Ueno, H. Nakaki, H. Funakubo, and S. Koda, Jpn. J. Appl. Phys. 44, L561 (2005).
28. Y. P. Wang, L. Zhou, M. F. Zhang, X. Y. Chen, J. M. Liu, and Z. G. Liu, Appl. Phys. Lett. 84, 1731 (2004).
29. Y. H. Lee, J. M. Wu, Y. C. Chen, Y. H. Lu, H. N. Lin, Electrochem. Solid State Lett. 10, F43 (2005).
30. Y. H. Lee, C. S. Liang, and J. M. Wu, Electrochem. Solid State Lett. 11, F55 (2005).
31. Y. H. Lee, J. M. Wu, Y. L. Chueh, and L. J. Chou, Appl. Phys. Lett. 87, 059542 (2005).
32. X. Qi, J. Dho, R. Tomov, M.G. Blamire, and J. L. MacManus-Driscoll, Appl. Phys. Lett. 86, 062903 (2005).
33. X. Qi, M. Wei, Y. Lin, Q. Jia, D. Zhi, J. Dho, M.G. Blamire, and J. L. MacManus-Driscoll, Appl. Phys. Lett. 86, 071913 (2005).
34. T. Fujii, S. Jinzenji, Y. Asahara, A. Kajima, and T. Shinjo, J. Appl. Phys. 64, 5434 (1988).
35. A. Kajima, T. Kaneda, H. Ito, T. Fujii, I. Okamoto, J. Appl. Phys. 70, 3760 (1991).
36. B. U. M. Rao, G. Srinicasan, J. Appl. Phys. 70, 6317 (1991).
37. M. M. Kumar, S. Srinath, G. S. Kumar, and S. V. Suryanarayana, J. Magn. Magn. Mater. 188, 203 (1998).
38. M. M. Kumar, A. Srinivas, G. S. Kumar, and S. V. Suryanarayana, J. Phys.: Condens. Matter. 11, 8131 (1999).
39. K. Ueda, H. Tabata, and T. Kawai, Appl. Phys. Lett. 75, 555 (1999)
40. T. Kanai, S. I. Ohkoshi, A. Nakajima, T. Watanabe, and K. Hashimoto, Adv. Mater. 13, 487 (2001).
41. M. M. Kumar, A. Srinivas, and S. V. Suryanarayana, J. Appl. Phys. 87, 855 (2000).
42. T. Kanai, S. I. Ohkoshi, and K. Hashimoto, J. Phys. Chem. Solids 64, 391 (2003).
43. Y. P. Wang, L. Zhou, M. F. Zhang, X. Y. Chen, J. M. Liu, and Z. G. Liu, Appl. Phys. Lett. 84, 1731 (2004).
44. D. Lee, M. G. Kim, S. Ryu, H. M. Jang, S. G. Lee, Appl. Phys. Lett. 86, 222903 (2005).
45. W. Eerenstein, F. D. Morrison, J. Dho, M. G. Blamire, J. F. Scott, and N. D. Mathur, Science 307, 1203a (2005).
46. C. Ederer, N. A. Spaldin, Phys. Rev. B 71, 060401 (2005)
47. C. Ederer, N. A. Spaldin, Phys. Rev. B 71, 224103 (2005)
48. I. Sosnowska, T. Peterlin-Neumaier and E. Steichele, J. Phys. C: solid State Phys., 15, 4835 (1982)
49. I. Sosnowska, M. Loewenhaupt, W. I. F. Davie and R. M. Ibberson, Physica B, 180&181, 117 (1992)
50. I. Sosnowska, W. Schafer, W. Kockelmann, K. H. Andersen, and I. O. Troyanchuk, Appl. Phys. A: Mater. Sci. Process. 74, S1040 (2002).
51. A. V. Zalesskii, A. A. Frolov, T. A. khimich, and A. A. Bush, Phys. Solid State 45, 141 (2003).
52. A. A. Gippius, D. F. Khozeev, E. N. Morozova, and A. V. Zalessky, phys. Stat. sol. (a) 196, 221, (2003)
53. B. Jaffe, W. R. Cook, and H. Jaffe, Piezoelectric ceramics, Academic Press, New York, 1971, P.50.
54. J. F. Nye, Physical Properties of Crystals, Clarendon Press, Oxford, (1990).
55. R.E. Newnham, Structure-Property Reactions, Springer Verlag, New York, (1975)
56. B. Ruette, MS thesis, Virginia Tech (2003).
57. M. E. Lines and A. M. Glass, Principles and Applications of Ferroelectric and Related Materials, Clarendon Press, Oxford (1997).
58. Laureen H. Parker and A. F. Tasch, “Ferroelectric materials For 64Mb and 256Mb DRAMs,” IEEE CIRCUIT DEVICES, p.17-26, January 1990
59. J. C. Burfoot and G. W. Taylor, Polar Dielectrics and Their Applications, Berkley: Univ. of Calif. Press, (1979).
60. J. M. Herbert, Ceramic Dielectrics and Capacitors, New York: Gordon and Breach, (1985).
61. J. T. Evans and R. Womack, “A Experimental 512-bit Nonvolatile Memory with Ferroelectric Storage Cell,“ IEEE J. Solid State. Circuits, 23, 1171 (1988)
62. G.. A. Somolenskii, V. A. Isupov, and A. I. Agranovskaya, Soviet Phys. Solid State, 1, 149, (1959)
63. E. C. Subbarao, “The System Sodium Fluoride-Alumina Investigated by Quenching Methods,” J. Am. Cream. Soc. 45, 166 (1962)
64. Kazuchi Amanuma, Takashi Hase, and Yoichi Miyasaka, “ Preparation and ferroelectric properties of the SrBi2Ta2O9 thin films,” Appl. Phys. Lett., 66, 221 (1995)
65. Yasuhiro Shinada et al., “Retention Characteristics of a ferroelectric memory based on SrBi2Ta2O9,” Jpn. J. Appl. Phys., 36, 5912, (1997)
66. H. N. Al-Shareef et al., “Voltage offsets and imprint mechanism in SrBi2Ta2O9 thin films,” J. Appl. Phys., 80, 4573, (1996)
67. W. L. Warren et al., “Driving force behind voltage shifts in ferroelectric materials,” Appl. Phys. Lett., 68, 1681, (1996)
68. J. B. Goodenough. Magnetism and the chemical bond. Interscience Publishers, New York, 1963.
69. W. H. Meiklejohn, C. P. Bean, Phys. Rev. 102, 1413 (1956)
70. W. H. Meiklejohn, C. P. Bean, Phys. Rev. 105, 904 (1957).
71. R. E. Cohen, Nature, 358, 136. (1992).
72. Y. Kuroiwa, Phys. Rev. Lett., 87, 217601, (2001)
73. A. Filippetti, and N. A. Hill, Phys. Rev. B 65, 195120 (2002)
74. J. V. D. Boomgaard, A. M. J. G. Van Run, and J. Van Suchtelen, Ferroelectrics 14, 727 (1976).
75. J. V. D. Boomgaard, A. M. J. G. Van Run, and J. Van Suchtelen, Ferroelectrics 10, 295 (1976).
76. J. Van Suchtelen, Philips Res. Rep. 27, 28 (1972).
77. C. W. Nan, L. Liu, N. Cai, J. Zhai, Y. Ye, and Y. H. Lin, Appl. Phys. Lett., 81, 3831, (2002)
78. G. Srinivasan, E. T. Rasmussen, and R. Hayes, Phys. Rev. B 67, 014418 (2003)
79. C. W. Nan, N. Cai, L. Liu, J. Zhai, Y. Ye, and Y. Lin, J. Appl. Phys., 94, 5930, (2003).
80. N. Cai, J. Zhai, C. W. Nan, Y. Lin, and Z. Shi, Phys. Rev. B 68, 224103 (2003)
81. P. Murugavel, D. Saurel, W. Prellier, Ch. Simon, and B. Raveau, Appl. Phys. Lett., 85, 4424, (2004)
82. B. T. Cong, N. N. Dinh, D. V. Hien, N. L. Tuyen, Physica B 327, 370, (2003).
83. H. Zheng et al., Science 303, 661, (2004)
84. K. S. Chang et al., Appl. Phys. Lett., 84, 3091, (2004)
85. A.M.J.G. van Run, D.R. Terrell, and J.H. Scholing, J. Mater. Sci. 9, 1710, (1974)
86. G. Harshe, J.P. Dougherty, and R.E. Newnham, Int. J. Appl. Electromagn. Mater. 4, 145, (1993)
87. D. N. Astrov et al., Sov. Phys. SETP 13, 729, (1961)
88. B. Ruette, S. Zvyagin, A. P. Pyatakov, A. Bush, J. F. Li, V. I. Belotelov, A. K. Zvezdin, and D. Viehland, Phys. Rev. B 69, 064114 (2004)
89. M. I. Morozov, N. A. Lomanova, and V. V. Gusarov, Russ. J. Gen. Chem. 73, 1772, (2003)
90. A. K. Pradhan et al., J. Appl. Lett. 97, 093903, (2005)
91. J. S. Kim, C. H. Yang, S. G.. Yoon, W. Y. Choi, and H. G. Kim, Appl. Surf. Science 140, 150 (1999)
92. K. Asami, T. Osaka, T. Tamanobe, I. Koiwa, Surf. Interface Anal., 30, 391 (2000)
93. Y. H. Lee and J. M. Wu, J. Crystal Growth 263, 436, (2004)
94. J. F. Moulder, W. F. Stickle, P. E. Sobol, K. D. Bomben, J. Chastain (Eds.), Handbook of X-ray photoelectron Spectroscopy, Perkin-Elmer Corporation, Minnesota, 1992.
95. M. Yashima, D. Ishimura, Chem. Phys. Lett. 378, 395, (2003)
96. B. Nagaraj, S. Aggarwal, and R. Ramesh, J. Appl. Phys. 90, 375 (2001)
97. C. C. Yang, M.S. Chen, T.J. Hong, C.M. Wu, J. M. Wu, and T.B. Wu, Appl. Phys. Lett. 66, 2643 (1995)
98. M. S. Chen, T.B. Wu, and J. M. Wu, Appl. Phys. Lett. 68, 1430 (1996)
99. A. Srivastava, D. Kumar, and R. K. Singh, Electrochem. Solid State Lett. 2, 294 (1999)
100. Y. R. Luo and J. M. Wu, Appl. Phys. Lett. 79, 3669 (2001)
101. C. S. Liang, J. M. Wu, and M. C. Chang, Appl. Phys. Lett. 81, 3624 (2002)
102. C. S. Liang, L. J. Lin, and J. M. Wu, Electrochem. Solid State Lett. 8, F29 (2005)
103. C. S. Liang, and J. M. Wu, Appl. Phys. Lett. 87, 022906 (2005)
104. S. Yokoyama, T. Ozeki, T. Oikawa, and H. Funakubo, Integr. Ferroelectr. 59, 1429 (2003)
105. S. J. Pennycook and P. D. Nellist, Impact of Electron Microscopy on Materials Research (Kluwer Academic, Dordrecht, 1999), p. 161.
106. S. J. Pennycook and D. E. Jesson, Phys. Rev. Lett. 64, 938 (1990)
107. P. D. Nellist and S. J. Pennycook, Ultramicroscopy 78, 111 (1999).
108. S. Y. Chen, and C. L. Sun, J. Appl. Phys. 90, 2970 (2001)
109. J. K. Yang, W. S. Kim, and H. H. Park, Appl. Surf. Science 169-170, 544 (2001)
110. J. K. Lee, C. H. Kim, H. S. Suh, and K. S. Hong, Appl. Phys. Lett. 80, 3593 (2002).
111. Y. Y. Yao, C. H. Song, P. Bao, D. Su, X. M. Liu, J. S. Zhu, and Y. N. Wang, J. Appl. Phys. 95, 3126 (2004).
112. Y. Zhong, G.. Hu, and T. A. Tang, Jpn. J. Appl. Phys. 42, 7424 (2003).
113. M. Alexe, and A. Gruverman, Nanoscale Characterization of Ferroelectric Materials (Springer, Berlin, 2004)
114. H. Ishiwara, M. Okuyama, and Y. Arimoto, Ferroelectric Random Access Memory: Fundamentals and Applications, (Springer, Berlin, 2004), Vol. 93.
115. A. Gruverman, O. Auciello, H. Tokumoto, Ann. Rev. Mater. Sci. 28, 101. (1998)
116. A. Gruverman, A. Kholkin, A. Kingon, H. Tokumoto, Appl. Phys. Lett. 78, 2751, (2001)
117. H.-N. Lin, S.-H. Chen, S.-T. Ho, P.-R. Chen, I.-N. Lin, J. Vac. Sci. Technol. B, 21, 916, (2003)
118. L. M. Eng, H.-J. Guentherodt, G. Rosenman, A. Skliar, M. Oron, M. Katz, and D. Eger, J. Appl. Phys. 83, 5973 (1998).
119. S. Hong, J. Woo, H. Shin, J. U. Jeon, Y. E. Pak, E. L. Colla, N. Setter, E. Kim, and K. No, J. Appl. Phys. 89, 1377 (2001).
120. A. Roelofs, U. Boettger, R. Waser, F. Schlaphof, S. Trogisch, and L. M. Eng, Appl. Phys. Lett. 77, 3444 (2000).
121. B. J. Rodriguez, A. Gruverman, A. I. Kingon, and R. J. Nemanich, J. Appl. Phys. 95, 1958 (2004).
122. S. Hong, B. Escabart, E. L. Colla, and N. Setter, Appl. Phys. Lett. 84, 2382 (2004).
123. S. V. Kalinin and D. A. Bonnell, Phys. Rev. B 65, 125408 (2002).
124. T. Tybell, P. Paruch, T. Giamarchi, and J.-M. Triscone, Phys. Rev. Lett. 89, 97601-1 (2002).
125. C. S. Ganpule, V. Nagarajan, H. Li, A. S. Ogale, D. E. Steinhaueur, S. A. Aggarwal, E. Williams, and R. Ramesh, Appl. Phys. Lett. 77, 292 (2000).
126. C. S. Ganpule, A. L. Roytburd, V. Nagarajan, B. K. Hill, S. B. Ogale, E. D. Williams, R. Ramesh, and J. F. Scott, Phys. Rev. B 65, 014101-7 (2001).
127. C. S. Ganpule, V. Nagarajan, S. P. Alpay, A. Royturd, and R. Ramesh, J. Appl. Phys. 91, 1477 (2002).
128. A. Roelofs, N. A. Pertsev, R. Waser, F. Schlaphof, L. M. Eng, C. Ganpule, V. Nagarajan, and R. Ramesh, Appl. Phys. Lett. 80, 1424 (2002).
129. D. S. Fu, K. Suzuki, K. Kato, and H. Kuzuki, Appl. Phys. Lett. 82, 2130 (2003).
130. J. A. Christman, J. R. R. Woolcott, A. I. Kingon, and R. J. Nemanich, Appl. Phys. Lett. 73, 3851-53 (1998).
131. C. S. Ganpule, A. Stanishevsky, Q. Su, S. Aggarwal, J. Melngailis, E. Williams, and R. Ramesh, Appl. Phys. Lett. 75, 409 (1999).
132. V. Nagarajan, A. Roytburd, A. Stanishevsky, S. Prasertchoung, T. Zhao, L. Chen, J. Melngailis, O. Auciello, and R. Ramesh, Nat. Mater. 2, 43 (2003).
133. V. Nagarajan, A. Stanishevsky, T. Zhao, L. Chen, J. Melngailis, A. R. Royturd, and R. Ramesh, Appl. Phys. Lett. 81, 4215 (2002).
134. C. Harnagea, M. Alexe, D. Hesse, and A. Pignolet, Appl. Phys. Lett. 83, 338 (2003).
135. E. L. Colla, I. Stolichnov, P. E. Bradley, and N. Setter, Appl. Phys. Lett. 82, 1604 (2003).
136. I. Stolichnov, E. Colla, A. Tagantsev, S. S. N. Bharadwaja, S. Hong, N. Setter, J. S. Cross, and M. Tsukada, Appl. Phys. Lett. 80, 4804 (2002).
137. T. Tybell, C. H. Ahn, and J.-M. Triscone, Appl. Phys. Lett. 75, 856 (1999).
138. T. Tybell, C. H. Ahn, and J.-M. Triscone, Appl. Phys. Lett. 72, 1454 (1998).
139. S. V. Kalinin, A. Gruverman, and D. Bonnell, Appl. Phys. Lett. 85, 795 (2004).
140. J. A. Christman, S. H. Kim, H. Miwa, J. P. Maria, B. J. Rodriguez, A. I. Kingon, and R. J. Nemanich, J. Appl. Phys. 87, 8031 (2000).
141. V. Nagarajan, S. Aggarwal, A. Gruverman, R. Ramesh, and R. Waser, Appl. Phys. Lett. 86, 262910 (2005).
142. D. Dimos, W. L. Warren, M. B. Sinclair, B. A. Tuttle, and R. W. Schwartz, J. Appl. Phys. 76, 4305 (1994).
143. W. L. Warren, D. Dimos, B. A. Tuttle, R. D. Nasby, and G. E. Pike, Appl. Phys. Lett. 65, 1018 (1994).
144. W. L. Warren, D. Dimos, G. E. Pike, B. A. Tuttle, M. V. Raymond, R. Ramesh, and J. T. E. Jr., Appl. Phys. Lett. 67, 866 (1995).
145. S. H. Kim, D. S. Lee, C. S. Hwang, D. J. Kim and A. I. Kingon, Appl. Phys. Lett. 77, 3036 (2000).
146. I. Kim, Y. Avrahami, H. L. Tuller, Y. B. Park, M. J. Dicken, and H. A. Atwater, Appl. Phys. Lett. 86, 192907 (2005).
147. B. J. Rodriguez, A. Gruverman, A. I. Kingon, R. J. Nemanich, and O. Ambacher, Appl. Phys. Lett. 80, 4166 (2002).
148. Y. H. Lee, J. M. Wu, and C. H. Lai, Appl. Phys. Lett. (submitted)
149. B.B.V. Aken, T.T.M. Palstra, A. Filiooetti, and N. A. Spaldin, nature mater. 3, 164 (2004).
150. C. Ederer, and N. A. Spaldin, nature mater. 3, 849 (2004).
151. D.V. Efremov, J.V.D. Brink, and D.I. Khomskii, nature mater. 3, 853 (2004).
152. T. Lottermoser, T. Lonkai, U. Amann, D. Hohlwein, J. Ihringer, and M. Fiebig, Nature (London) 430, 541 (2004)
153. M.K. Ok et al., Inorg. Mater. 40, 1978 (2001)
154. R.E. Cohen, and H. Krakauer, Ferroelectrics 136, 65 (1992)
155. R.E. Cohen, Nature (London) 358, 136 (1992)
156. M. Atansov, and D. Reinen, J. Phys.Chem. A 105, 5450 (5002)
157. U.V. Waghmare, and N. A. Spaldin, Phys. Rev. B 67, 125111 (2003).
158. Y. Kuroiwa et al., Phys. Rev. Lett. 87, 217601 (2001).
159. G.O. Jones, and P.A. Thomas, Acta Crystallogr. B 58, 168 (2003).
160. A. Zalesskii, A. Zvezdin, A. Frolov, and A. Bush, JETP Lett. 71, 465 (2000).
161. A. V. Zalesskii, A. A. Frolov, T. A. Khimich, A. A. Bush, V. S. Pokatilov, and A. K. Zvezdin, Europhys. Lett. 50, 547 (2000).
162. I. Sosnowska and A. Zvezdin, J. Magn. Magn. Mater. 140-144, 167 (1995).
163. Yu. F. Popov, A. Zvezdin, G. Vorob’ev, A. Kadomtseva, V. Murashev, and D. Rakov, JETP Lett. 57, 69 (1993).
164. A. Kadomtseva, Yu. Popov, G. Vorob’ev, and A. Zvezdin, Physica B 211, 327 (1995).
165. Yu. F. Popov, A. Kadomteseva, S. Krotov, D. Belov, G. Vorob’ev, P. Makhov, and A. Zvezdin, Low Temp. Phys. 27, 478 (001).
166. R. Blinc and A. P. Levanyuk, Incommensurate Phases in Dielectrics North-Holland, New York, (1986).
167. T. Lorenz, B. Buchner, P. H. M. van Loosdrecht, F. Shonfield, G. Chouteau, A. Revcolevschi, and G. Chalenne, Phys. Rev. Lett.81, 148 (1998).
168. R. Blinc, U. Micac, T. Apih, J. Dolinsek, J. Seliger, J. Slak, S. Zumer, L. Guibe, and D. Ailion, Phys. Rev. Lett. 88, 015701 (2002).
169. B. Topic, U. Haeberlen, and R. Blinc, Phys. Rev. B 42, 7790 (1990).
170. R. Blinc, P. Prelovsek, and R. Kind, Phys. Rev. B 27, 5404 (1983).
171. T. Aphih, U. Mikac, J. Dolinsek, J. Seliger, and R. Blinc, Phys. Rev. B 61, 1003 (2000).
172. T. Aphih, U. Mikac, J. Seliger, J. Dolinsek, and R. Blinc, Phys. Rev. Lett. 80, 2225 (1998).
173. C.Y. Yau, R. Palan, K. Tran, and R.C. Buchanan, Appl. Phys. Lett. 86, 032907 (2005).
174. Y. Ding, J.S. Liu, H.X. Qin, J.S. Zhu, and Y.N. Wang, Appl. Phys. Lett. 78, 4175 (2001).
175. M.S. Tomar, R.R. Melgarejo, A. Hidalgo, S.B. Mazumder, and R.S. Katiyar, Appl. Phys. Lett. 83, 341 (2003).
176. Z.G. Zhang, D.P. Chu, B.M. Mcgregor, P. Migliorato, K. Ohashi, K. Hasegawa, and T. Shimoda, Appl. Phys. Lett. 83, 2892 (2003).
177. E. Traversa, S. Matsushuma, G. Okada, Y. Sadaoka, Y. Sakai, K. Watanabe, Sens. Actuator B-Chem. 24-25, 661 (1995).
178. N.N. Toan, S. Saukko, V. Lantto, Phys. B 327, 279 (2003).
179. D. Kuscer, M. Hrovat, J. Holc, S. Bernik, D. Kolar, J. Pow. Souc. 61, 161 (1996).
180. R. Dogra, A.C. Junqueira, R.N. Saxena, A.W. Carbonari, J.M. Filho, M. Moralles, Phys. Rev. B 63, 224104 (2001).
181. A. Scholl, J. Stohr, J. Luning, J.W. Seo, J. Fompeyrine, H. Siegwart, J.P. Locquet, F. Nolting, S. Anders, E.E. Fullerton, M.R. Scheinfein, H.A. Padmore, Science 287, 1014 (2000).
182. J. Nogues, I. K. Schuller, J. Magn. Magn.Mater. 192, 229 (1999).
183. Y. Yamada, T. Kusumori, H. Muto, Appl. Phys. Lett. 80, 1409 (2002).
184. D.S. Deng, X.F. Jin, Phys. Rev. B. 65, 172402 (2002).
185. Q. X. Guo, A. Okada, H. Kidera, T. Tanaka, M. Nishio, H. Ogawa, J. Crystal Growth 237-239, 1079 (2002).
186. S. Zhu, C. H. Su, S.L. Lehoczky, P. Peters, M.A. George, J. Crystal Growth 211, 106 (2000).
187. X. Wang, S. Olafsson, P. Sandstrom, U. Helmersson, Thin Solid Films 360, 181 (2000).
188. N. Wakiya, T. Azuma, K. Shinozaki, N. Mizutani, Thin Solid Films 410, 114 (2002).
189. X. Guo, Z. Chen, D. Cui, Y. Zhou, H.Z. Huang, H.X. Zhang, F. Liu, K. Ibrahim, H. Qian, J. Crystal Growth 219, 404 (2000).
190. A.J. Signorelli, R.G. Hayes, Phys. Rev. B. 8, 81 (1973).
191. D.F. Mullica, C.K.C. Lok, H.O. Perkins, Phys. Rev. B. 31, 4039 (1985).
192. S.J. Oh, G.H. Kim, G.A. Sawatzky, HT. Jonkman, Phys. Rev. B. 37, 6145 (1988).
193. R. A. Rao, Q. Gan, C. B. Eom, Mat. Res. Soc. Symp. Proc. 474, 327 (1997).