隨著feature size 的縮小以及下世代光罩發展的延遲，
DPL(Double Patterning Lithography)已不足以用在14/10 奈米的技
術之上。TPL(Triple Patterning Lithography)是 DPL 的延伸，它
不僅能將pitch 增為三倍也能減少stitch 的使用以及存在於DPL 的
Native Conflict。雖然TPL 比起DPL 要來的更加複雜與困難，但TPL
可以實行在14/10 奈米的技術之上。在本論文中，我們將TPL 的考慮
放在legalization 的階段裡去產生一個更有利於分解的結果。我們
將利用重新排列cell 順序以及安插White space 來減少TPL conflict
的產生。在這個實驗結果裡，我們的legalizer 比起目前現有的
legalizer 可以減少更多的TPL conflict 及stitch。

As the shrinking of the feature size and the delay of the next generation lithography, double patterning lithography (DPL) is no longer enough for 14/10nm technology. Triple patterning lithography (TPL) is a nature extension from DPL, and it can not only triple the pitch but also reduce stitches and native conflicts. Although TPL is more difficult and complicated than DPL, TPL is inevasible for 14/10nm technology. In this thesis, we consider TPL during the standard cell legalization stage in order to let the resultant placement be more friendly to TPL decomposition. We provide a novel idea of reducing TPL conflicts through cell reordering and white space insertion. The experimental results show that as compared to a conventional legalizer, our legalizer is able to effectively reduce the number of conflicts and the number of stitches.

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