本論文研究一種利用低介電常數材料作為深紫外光微影中底抗反射層技術，此底抗反射層由於是利用低介電常數材料（FLARE、SILK、BCB）所構成的，可藉由控制其覆蓋硬質罩幕層之厚度，得到一性質極佳的底抗反射層，可以將來自底材的反射率降低至1 %以下，大幅提升元件製程之可靠度。此外，本抗反射層可適用於金屬連結製程中鋁、銅、鎢、氮化鈦及氮化鉭等高度反光之基底材料。由於此抗反射材料本身是由低介電常數材料所構成，因此在微影製程中可省去再外加抗反層的步驟，並增加製程的可靠度及競爭性。而有關此薄膜的其他性質，包括蝕刻特性、模擬、熱穩定性及物理化學特性等，將在本論文中做系統性探討。

A new structure of which can be use in bottom antireflective coating (BARC) layer of KrF and ArF photolithography is proposed. These antireflective layers, including benzocyclobutene (BCB), SILK and FLARE materials, are also the low dielectric constant film. By adding an optimized etching hard mask layer, the reflectance at resist / silicon substrate interface can be achieved to lower than 1 %. These films demonstrate the potential capability to be used as the BARC layer on highly reflectance substrates for metal interconnect application. Based on the properties of BARC and low dielectric constant, the process reliability of these materials can be ensured and the process competence can be promoted. In addition, other process characteristics such as etching durability, thermal stability, simulation, and physical and chemical behaviors of BCB, SILK and FLARE layers are also discussed.

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