為了決定設計微波電路原件時所要用到的參數，材料的物理性質量測是很重要的。本篇論文主要研究由材磁引發的鐵磁共振如何與結構共振產生交互作用，並提一個新的方法去量測飽和磁化強度、異向性磁場以及薄膜的電阻率。我們用HP 8722D網路分析儀對自製的T型微帶線作量測S參數，並且觀察外加磁場對S參數造成的變化。當外加磁場增加時，共振頻率的底部會先上升再下降；另外，共振頻率也會先往高頻處移動再往低頻處移動。共振頻率底部的變化量大約為4dB，而頻率的偏移大約為正負0.04GHz。異向性磁場約為-379.7高斯，飽和磁化強度為1255.7高斯。這些結果顯示，我們提供的方法可減化研究鐵磁薄膜性質的步驟。

The physical property measurement of microwave materials is an important research topic to determine the accurate parameters in the design of circuit components. The purpose of this research is to present how the ferromagnetic resonance (FMR) interacts with the structure resonance and propose a new method to measure the saturation magnetization, the anisotropic field, and the conductivity of magnetic films. The T-microstrip resonator was fixed on the universal test fixture that was connected with the HP 8722D vector network analyzer, and applied an uniform magnetic field on the films in various directions. Then, the transmission coefficient S21 parameters were measured at various magnetic fields by a HP 8722D vector network analyzer. When the magnetic field was increased, the deep of the transmission coefficient S21 increased initially and then decreased; in addition, the resonance frequency shifted to the right and then shifted to the left. The variant range of the deep was about 4dB and the shift range of the frequency was from –0.04GHz to 0.04GHz. The simulated anisotropic field Ha was about -379.7 Gauss and the saturation magnetization Ms was 1255.7 Gauss. These results suggest that this method simplifies the procedure for studying the physical properties of magnetic thin films.

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