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研究生: 鄒東臻
Tsou, Tung-Chen
論文名稱: 在低電壓下利用拋物面近似方法來處理元件庫特徵化
A Parabolic Hyperplane-based Approach to the Characterization of Ultra-low Voltage Cell Library
指導教授: 王俊堯
Wang, Chun-Yao
黃榮臣
Huwang, Long-Cheen
口試委員: 張世杰
陳勇志
學位類別: 碩士
Master
系所名稱: 理學院 - 統計學研究所
Institute of Statistics
論文出版年: 2015
畢業學年度: 103
語文別: 英文
論文頁數: 24
中文關鍵詞: 元件延遲低電壓元件庫特徵化
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  • 為了達到低功率,低電壓的設計是必需的。再正常電壓下,電晶體裡面不同的變量影響著元件延遲使得元件延遲被表示成這些變量的一個非線性函數。因為這些電晶體裡面的變量再低電壓的情況下未必是常態分佈,因此元件延遲的分佈也未必是常態分佈。所以必須要有一個元件延遲特徵化的方法來處理低電壓的情況。在先前的方法裡面,NLOPALV是一個非常有效率的方法來處理再低電下的元件庫特徵化。此方法是使用一個線性函數來近似元件延遲與電晶體變量之間的關係。這個方法再元件延遲與電晶體變量之間的關係是近似一個線性函數的時候會有很好的結果,但是當此關係非常不像是一個線性函數此方法可能會造成很大的誤差。蒙地卡羅方法所得到元件延遲的分佈來當做實際上真正的結果,因此誤差是與蒙地卡羅方法的結果來比較。我們的方法是利用退化的二次多項式來近似元件延遲與電晶體變量之間的關係。在我們的實驗結果裡面,我們的方法會比NLOPALV的誤差更小並且誤差在5%以下。


    中文摘要....................... i Abstract...................... ii Acknowledgement............... iv Contents...................... v List of Tables................ vi List of Figures............... vii Chapter1 Introduction......... 1 Chapter2 Preliminaries........ 3 2.1 NLOPALV Method............ 3 Chapter3 Improving Method..... 9 3.1 Proposed Method........... 9 3.2 Cell Characterization..... 16 Chapter4 Experimental Result.. 19 Chapter5 Conclusion........... 22

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