射頻電容式耦合電漿數值模擬研究— 空心陰極結構的影響

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研究生：	陳佳瑜 Chen, Chia-Yu
論文名稱：	射頻電容式耦合電漿數值模擬研究— 空心陰極結構的影響 Numerical Simulation Study of Capacitively Coupled RF Plasma Discharges– Effect of Hollow Cathode Structure
指導教授：	陳金順 Chen, Gen-Shun
口試委員:	柳克強 Leou, Keh-Chyang 張家豪 Chang, Chia-Hao
學位類別：	碩士 Master
系所名稱：	原子科學院 - 工程與系統科學系 Department of Engineering and System Science
論文出版年：	2017
畢業學年度：	105
語文別：	中文
論文頁數：	87
中文關鍵詞：	中空陰極管效應、電容式耦合電漿源、氬氣、四氟化碳
外文關鍵詞：	Hollow Cathode Structure, Capacitively Coupled Plasma, Argon, CF4
相關次數：	點閱：2 下載：0
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電容耦合電漿源(Capacitively coupled plasma (CCP) sources)近年來已經被廣泛的使用在材料製程中。本研究旨為以流體模型電漿模擬計算分析，探討電容式耦合電漿源中，接地電極增加溝槽(trench)對電漿特性之影響，目的是為產生hollow cathode discharge(HCD)，調控電漿分布與均勻性，本研究分為二部分，分別使用氬氣與四氟化碳，電將由27 MHz射頻驅動。模擬利用二維流體模型模擬在電漿蝕刻(Plasma etching)系統中的電漿行為，並透過分析模擬結果比較電漿特性與操作參數之關聯性。
氬氣電漿模擬計算包含3個氣體粒子以及4條氣相反應，模擬結果顯示Argon電漿在電極未加溝槽時，接地電極端的鞘層厚度只有1.2 mm，溝槽出口處的電子密度為11017m-3，所以當溝槽寬度為4 mm時，Argon電漿即產生HCD效應，電子密度在溝槽出口處有明顯上升兩倍(2.41017m-3)：因此對射頻電容式電漿放電而言，置接電地電極之溝槽連設置於仍會產生hollow cathode discharge效應，且當溝槽寬度必須大於兩倍鞘層厚度時才會產生明顯的HCD，另可透過在電極上連接不同的溝槽寬度來調控電漿密度的分布與均勻性。
在CF4電漿模擬計算方面，包含11個氣體粒子以及43條氣相反應。首先建立基本電容式電漿(無溝槽)模型，模擬結果顯示CF4電漿因氟負離子集中於電漿區中央一極窄範圍內，空間密度梯度過高，數值計算沒有良好的收斂結果，測試過：調整收斂範圍，改變電漿初始值...但依舊還是存在模擬計算的問題。

Capacitively coupled plasma (CCP) sources have been widely used for material processing. The purpose of this study is to investigate the effect of trench on the plasma properties. In this study, CCP discharges have been investigated by fluid model numerical simulations (CFD-ACE+, ESI Corp.).In order to produce the hollow cathode discharge (HCD) to tune the plasma distribution and uniformity. This study is divided into two parts, respectively, using Argon and Carbon tetrafluoride, the discharge is generated by a 27 MHz radio frequency power.. The two-dimensional fluid model was used to simulate the plasma behavior in the plasma etching system, and the correlation between the plasma properties and the operating parameters was compared by analyzing the simulation results.
The simulation model takes into account 3 gaseous species and 4 reactions for Ar. Simulation results show that, for typical operation conditions(electrode without trench),the electrons ,is around 1.11017 1/m-3,are evenly concentrated in the plasma chamber, and the sheath width on the grounded electrode is 1.2 mm. When a trench of dimension 4 mm x 8 mm is added, simulation results reveal that there is a significant modification the spatial profile of the plasma density(2.41017 1/m-3), as a result of the hollow cathode effect：Simulation results show that, for typical operation conditions, the plasma density of the CCP is enhanced by the “hollow cathode“ effect of the trench if the width of the trench is wider than twice the thickness of the plasma sheath, as expected. In addition, simulation results also demonstrate that the plasma uniformity can also be tailored by the hollow cathode effect due to a grounded electrode (GE) trench.
The simulation model takes into account 11 gaseous species and 43 reactions for Ar. First, the basic plasma model (without trench) was established. The simulation results show that the F- density is concentrated in the central a very narrow region with a large spatial density gradient, so the numerical convergence results is not good . We have been tested: adjust the convergence range and change the initial value of the plasma ... but there is still the simulation calculation problem.

摘要        i
Abstract        ii
目錄        iv
圖目錄        vii
表目錄        xi
第一章背景與動機    1
§ 1-1 前言    1
§ 1-2研究目的    2
§ 1-3 文獻回顧    2
§ 1-4文獻回顧結論    4
第二章電漿機制與應用    6
§2.1電漿基本原理    6
§2.2電漿的蝕刻機制    8
第三章物理模型與研究方法    12
§ 3.1流體模型    12
§ 3.2 幾何結構與邊界條件    16
§ 3.3 反應式資料庫    18
§ 3.4 起始條件    20
§ 3.5軟體簡介    20
第四章 Argon電漿模擬結果    27
§ 4.1 模擬條件及起始狀況    27
§ 4.2 隨時變之模擬結果    28
4.2.1 基本放電特性    28
4.2.2  Ar*,Ar+粒子的分析    36
4.2.3  一個電壓週期內的變化    39
§ 4.3模擬不同溝槽尺寸下對電漿的影響    44
4.3.1模擬不同腔體結構對基本放電特性的影響    45
4.3.2模擬主要活性粒子對不同腔體結構的變化    50
4.5溝槽接在加壓電極與接地電極對基本放電特性的影響的比較    53
第五章 四氟化碳電漿模擬結果    55
§ 5.1 CF4電漿反應式資料庫    55
§ 5.2 CF4電漿模擬條件及起始狀況    58
§ 5.3 CF4電漿隨時變之模擬結果    59
5.3.1 基本放電特性    59
§ 5.4 CF4電漿隨時變之模擬結果-在電漿腔體中的F-離子密度    65
5.4.1 驗證反應式的反應速率    65
5.4.2調整粒子設定初始值    77
5.4.3 改善收斂-增加迭帶次數以及增加每一步的計算時間    78
§ 5.5 在CF4電漿腔體中粒子的mobility與diffusion    80
§ 5.6 在CF4電漿腔體中粒子的運動狀態    81
第六章結論及未來工作    82
§ 6.1總結    82
§ 6.2未來工作    84
參考文獻    85
附錄A 不同材料的二次電子係數    87

                                

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