本實驗以原子層化學氣相沉積法 (Atomic layer chemical vapor deposition , ALCVD )鍍製La2O3、HfO2，以及二種不同結構之La-Hf-O薄膜，ALCVD可在低溫成長、具有優良之膜厚控制能力以及階梯覆蓋性，為鍍製超薄薄膜的理想方式。鍍製時採用La(iPr2-FMD)3做為鑭的前趨物，TEMAH (Hf(NC3H8)4)做為鉿的前趨物，二者皆以氧氣電漿做為氧化劑進行反應。

本實驗第一部分將探討La2O3、HfO2薄膜之材料性質，包含薄膜均勻性、XPS、GIXRD、AES、TEM等材料分析，以及製作成MIS電容結構(Metal – Insulator – Semiconductor )量測此電容在不同熱處理溫度之電性曲線。

第二部分La-Hf-O三元氧化物之性質研究，鍍製二種不同結構之La-Hf-O薄膜：La2O3/HfO2 (Stack)、LaHfOx (Alloy)，其中La2O3、HfO2的鍍製cycle數比均為1:1，進行材料分析以及電性量測， 探討熱處理溫度對材料性質的影響。

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