單壁奈米碳管為準一維的奈米材料，具有良好的抵抗電致遷移能力、高熱穩定性、高電流密度等特性，因此單壁奈米碳管具有相當大的潛力來取代現在積體電路中以銅為主的金屬連接線，在未來應用於高速元件中。研究指出，奈米碳管於電子元件應用上，在不控制奈米碳管成長方向之下水平成長網路狀(random network)單壁奈米碳管所構成的電子元件，由於碳管與碳管之間因為彼此接觸所造成之接觸阻抗會限制元件之電荷傳導的能力，使元件之載子遷移率遠低於奈米碳管本身固有之載子遷移率，降低了電荷傳輸能力。水平方向排列成長之奈米碳管能有效定向與定位製作奈米碳管電子元件，且能大面積發展，降低碳管之間的接觸阻抗以提高元件傳導能力。
在奈米碳管的合成方式中，高溫熱裂解化學氣相沉積法被廣泛應用來成長碳管。利用單晶石英基版表面的特殊結構能有效引導奈米碳管沿著某一特定方向排列成長，且石英基板不導電之特性亦能有效降低元件在高頻訊號上的損失。本論文利用熱裂解化學氣相沈積法於ST cut石英基板上合成水平排列式單壁奈米碳管，並以排列式奈米碳管製作電性量測用之試片。ST cut單晶石英基板經過900 ℃高溫長時間退火處理之後，石英晶格表面會呈現特殊之階梯狀結構，有助於引導奈米碳管定向排列成長，而製程所使用之催化劑為二氧化矽(SiO2)/鎳(Ni)之雙層催化劑結構，利用上層SiO2為阻絕層使奈米碳管側向成長，且SiO2之多孔隙結構亦能限制Ni金屬顆粒大小以成長小直徑之單壁奈米碳管。成長碳管之製程氣體為甲烷(CH4)與氫氣(H2)之混合氣體，實驗結果顯示成長溫度與時間會影響奈米碳管的覆蓋性、準直性與品質。製程溫度為900 ℃時所成長出來之奈米碳管長度在10 μm以上，密度約為1 tube/μm，平均直徑約為1.12±0.06 nm，且IG/ID比值在10以上，為高品質之奈米碳管。
在奈米碳管高頻電性之試片製作上，設計元件之光罩圖形，利用黃光微影製程製作元件，使用熱裂解式化學氣相沉積法在900 ℃、成長時間30分鐘成長水平排列式奈米碳管製作元件，實驗顯示熱退火後處理能有效提高奈米碳管電子元件之電流值，電流值由10-7安培上升到10-6安培，最大可提高34.6倍。奈米碳管之高頻電性量測則是使用向量式網路分析儀來進行S參數(Scattering-parameter)量測，利用校正用之特殊試片結構Dangling Open、Through、Open與具有CNT之試片分別量測其S參數，利用去嵌化(de-embedding)之方式得到奈米碳管之阻抗、電阻與電感特性。

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