600V垂直型超接面閘流體過壓保護元件的設計｜國立清華大學博碩士論文庫

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研究生：	楊富雄 Fu-Hsiung Yang
論文名稱：	600V垂直型超接面閘流體過壓保護元件的設計 The Design of 600V Vertical Super-Junction TSPDs
指導教授：	龔正 Jeng Gong
口試委員:
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering
論文出版年：	2006
畢業學年度：	94
語文別：	英文
論文頁數：	82
中文關鍵詞：	突波保護、超接面、閘流體
外文關鍵詞：	surge protector, super-junction, thyristor
相關次數：	點閱：2 下載：0
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傳統的閘流體過壓保護元件 (TSPDs, Thyristor Surge Protective Devices) 在高壓應用時，必須降漂移區的摻雜濃度與提升厚度，相對的也增加導通電阻 (Ron)，因此限制了閘流體過壓保護元件額定電流的大小。
近年來，一種新的耐壓結構結構被發明並製作出來，這種結構稱為超接面 (Super-junction) 結構，他的主要特色為耐壓程度不會受摻雜濃的影響，因此，在提供高抗壓的同時，此種結構仍然擁有很高的摻雜濃度，因此其導通電阻比一般功率元件低很多。雖然有很多研究成功的將這種結構與功率金氧半電晶體 (Power MOS) 與絕緣閘雙極性電晶體 (IGBT) 結合且得到很好的效果，但很少有研究在探索這種結構應用在閘流體 (Thyristor)上的成果。
在此篇論文中，我們嘗試將超接面 (Super-junction) 結構與傳統的閘流體過壓保護元件結合，並設計一個額定電壓為600V的超接面閘流體過壓保護元件 (Super-junction TSPD)。雖然特性改善並沒有預期中來的好，但其特性與和傳統過壓保護閘流體的比較仍會在本論文中完整的呈現出來。

Conventional TSPDs (Thyristor Surge Protective Devices) have to reduce the doping of the drift region or increase its thickness for high voltage application. It causes the on resistance (Ron) rises rapidly and limits the rating current of the TSPD in high voltage application.
In recent years, an innovative structure, called the super-junction was invented. The outstanding feature of this structure is that the structure maintains a high doping concentration at high voltage ratings. Therefore, the on resistance of this structure is much smaller than that of the conventional drift region. Although there are many researches successful combining the super-junction with power MOS and IGBT, rarely researches to discuss the result when the super-junction embedded in the Thyristor.
In this thesis, we are trying to combine the super-junction with the thyristor, and designing a 600V super-junction TSPD. Though the performance of this device is not as good as expected, the characteristics and the comparison with the conventional TSPD are still presented in this thesis.

Contents
Abstract (Chinese)                                        i
Abstract (English)                                        ii
Acknowledgements                                       iii
Contents                                                iv
Table Captions                                                vii
Figure Captions                                          ix

Chapter 1   Introduction
1      Background                                                     1
2      Thesis Outline                                                   1

Chapter 2   Fundamental of Thyristor Surge Protective Devices
(TSPDs)
1   Overview of Surge Protective Devices                                   3
1.1   Spark Gaps/Gap Discharge Tubes (GDTs)                              3
1.2   Mental Oxide Varistors (MOVs)                                    4
1.3   Semiconductor Devices                                              5
1.4   Filters                                                         6
1.5   Brief Summary of Surge Protective Devices                          7
2   Analysis of Breakdown Mechanism                                     7
2.1   Avalanche Breakdown                                            8
2.2   Ionization Coefficient                                                   8
2.3   Multiplication Coefficient                                           9
3   Thyristor Surge Protective Devices Basic Structure and operation             10
3.1 Basic Structure                                                                11
3.2   Operative Mechanism                                             11
3.3   Basic I-V Curve Discussion                                        12
Figures                                                                                  13

Chapter 3   The Design of The SJ-TSPD
1    Introduction                                                                             22
2    Overview of Super-junction Principles                                                        22
2.1   BV-Ron relation of Conventional P-i-N Drift Region                                       23
2.2   BV-Ron relation of Super-junction Drift Region                              23
2.3   The Influence of Charge Imbalance on Super-Junction                                      25
3    Design of Super-junction Thyristor Surge Protective Device                                       26
3.1   VT Design Principle                                                                       26
3.2   IH Design Principle                                                                               27
3.3   VB Design Principle                                                                      28
3.4   VBO and IBO Design Principle                                                                     28
3.5   IOFF Design Principle                                                                       28
4    Test Circuit of Surge Protective Devices                                                                29
Figures                                                                                            30

Chapter 4   Simulation of SJ-TSPD
1    Simulations of Conventional TSPD                                    35
1.1   Structure Simulation of Conventional TSPD                     35
1.2   Electric Characteristics Simulation of Conventional TSPD               36
1.3   Structure and electric characteristics simulations of n-buffered TSPD    36
1.4   Property Comparison Between The Conventional TSPD and The
n-buffered TSPD                                           37
2   Simulations of Super-Junction TSPD                                    38
2.1   Process Flow of Super-Junction TSPD                               38
2.2   Electric Characteristics Simulation of The Super-Junction TSPD             n39
2.3   Property comparison between the n-buffered TSPD and the SJ-TSPD  39
3   The Optimum Design and Simulation of The SJ-TSPD                  40
3.1   Simulation of The Cell Pitch                                     40
3.2   Simulation of The Drift Region Concentration (NSJ)                       41
3.3   Simulation of The Charge Imbalance in Drift Region                        41
3.4   Simulation of The P-base                                              42
3.5   Simulation of The n-buffer                                                   43
3.6   Optimize The SJ-TSPD                                                 43
4   Transient Simulations                                                     44
4.1   Transient Simulations of the n-buffered TSPD                    44
4.2   Transient Simulations of the SJ-TSPD                             45
Figures                                                             46

Chapter 5   Conclusion                                            80
Figures                                                                82

Reference                                                83

                                

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