本論文的目的是以自行設計的高電壓半導體元件來完成電漿平面顯示器的驅動積體電路。基本上驅動系統的電路方塊有二種：低壓數位控制電路以及高壓輸出級電路。我們採用台灣積體電路製造公司的高壓製程條件來完成模擬設計，並且適當的調整製程以符合電漿平面顯示器驅動IC的設計，且作高壓元件參數萃取來完成高壓輸出級的模擬。最後，對於使用不同高壓元件LDMOSFET及LIGBT所完成的高壓輸出級電路之間的特性差異做一比較，再討論造成這些特性差異的原因。此外，並在理論上探討電漿平面顯示器元件的特性與其對高壓輸出級電路所造成的影響。
在數位資訊傳輸的時代裡，為了達到高畫質及多媒體應用，大畫面的顯示器越來越顯重要。目前電漿平面顯示器（Plasma Display Panel，PDP ）即將慢慢的取代陰極射線管（CRT）。產業界亦有越來越多的廠商投入此一行列之中，因為目前國內大部分的廠商尚在實驗性質階段尚未量產化及普及化。因此誰先在市場卡位就是贏家。而電漿平面顯示器的價格就是決定市場贏家的主要因素。電漿平面顯示器驅動IC的價格在總成本中佔有一定的比重，因此便宜兼特性好的驅動IC是有其必要性的。

基本上驅動IC的內部電路是由低壓數位控制電路與高壓輸出級電路所構成的。低壓數位控制電路主要是由移位暫存器(shift register)、閂鎖器(latch)、及一般控制邏輯閘（control logic）所構成的。高壓輸出級電路的型態依製程的不同有BiCMOS type、MOS and Pinched resistor type、及Complementary type等等。而本篇論文所採用的高壓輸出級電路為Complementary type。使用此電路具有低功率消耗與高速操作的優點。往後電漿平面顯示器若要取代CRT則電路的低電力化是一大課題，因此本論文的高壓輸出級電路直接從100V以下切入。

In this paper we designed a monolithic 80V plasma display panel (PDP) driver IC. The control block of this driving system is composed of 5V low-voltage control circuit and 80V high-voltage output circuit. A 5V 0.8μm CMOS fabrication process developed by TSMC Fab.1 is used and extended to design high voltage devices. The characteristic parameters of high voltage LDMOSFET and LIGBT are extracted to design the output circuit of a PDP driver IC that satisfies with the specifications. Finally, the circuit performance difference between the high-voltage output circuits of utilizing LIGBT and LDMOSFET is discussed.

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