氮化硼以及硼碳氮奈米管(Boron Nitride/Boron Carbon Nitride nanotube, BN/BCN-NTs)為新穎之一維奈米材料，其結構相似於碳管，同樣有著優異的機械性能，且具有更高的高溫抗氧化能力。在理論計算中顯示，其電學特性與其直徑以及幾何結構並無很大的關係，且其能隙之大小主要決定於其原子化學組成，藉由合成氮化硼/硼碳氮奈米管時在製程參數的調控下，改變其原子組成比例，可調變硼碳氮奈米管之能隙。對於應用發展於光電元件亦或是場效電晶體等奈米電子元件之製作極具潛力。
本研究以發展電漿輔助化學氣相沈積法(Plasma assisted Chemical Vapor Deposition, PACVD)之方式來合成BCN-NTs，藉由電漿輔助反應氣體之裂解以降低製程溫度。研究中，以不同實驗方式合成BCN-NTs。研究一，於成長碳管之製程中通入B2H6之反應氣體來合成BCN-NTs。當通入之B2H6流量增加時，奈米管之硼原子比例也相對增加。但過多的B2H6裂解出硼原子，在硼、氮無法有效形成h-BN鍵結之情況下，反而阻礙BCN-NTs成長。
研究二，於成長BNNTs之製程中通入碳源氣體來成長BCN-NTs。以PACVD系統成長BNNTs，藉由電漿輔助反應氣體裂解之方式相較低於一般CVD之製程溫度。並且相較於文獻利用氧化物輔助成長BNNTs，本研究首創利用通入O2取代先前文獻中氧化物之作法，藉由O2與與B2H6之氣體反應而形成B2O2，能於較低溫下與NH3反應而形成h-BN鍵結。並可進一步於製程中調控O2之流量，藉此獨立探討O2之流量對於BNNTs成長之影響。由掃描式電子顯微鏡(SEM)之影像可知，在通入氣體B2H6/NH3/O2/Ar = 20/80/10/20 sccm、電漿功率200 W、製程溫度為900°C下為最佳之成長參數。所成長之BNNTs長約為3~6 µm，管徑約20~60 nm左右，具有高密度且高均勻性。利用高解析穿透式電子顯微鏡(HRTEM)觀察BNNTs之結構，可知其為竹節狀(bamboo-lik)之一維中空管狀結構，以及為頂端成長模式(Tip-growth mode)。藉由電子能量損失能譜(EELS)、X光光電子能譜(XPS)以及拉曼光譜(Raman spectrum)材料分析可確認合成物為氮化硼成份，並具有六方晶系的氮化硼結構(hexagonal-BN)。於成長BNNTs之製程中藉由通入碳源氣體(CH4、C2H4)，提供碳原子以合成BCN-NTs。分析其原子組成可知，BCN-NTs中碳原子比例隨通入之碳源氣體流量提高而增加，碳原子增加之比例也與所通入的碳源氣體有絕對的關係。從Raman光譜之分析可知其具有為h-BN之特徵譜線以及對應碳管之特徵譜線G-band。由陰極激發光光譜(CL)與真空紫外光激發光譜儀系統(VUV_PL)之量測，可知所合成之BCN-NTs為半導性之材料。

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