本實驗以原子層化學氣相沉積法（Atomic layer chemical deposition，簡稱ALCVD）鍍製高介電薄膜，因ALCVD具有極佳的厚度控制能力、均勻覆蓋能力以及低鍍膜溫度等優點，為許多鍍製超薄膜方法中做最具吸引力的。在鍍製HfO2時採用TEMAH (Tetrakis (ethylmethylamido)Hafnium) 作為Hf的前驅物，並以D2O作為氧化劑 。
本實驗另外一個重點為電漿處理，分為表面電漿處理和臨場電漿處理兩種。表面電漿處理主要是希望經由水氣或是N2+H2電漿，在表面長上OH-或是NH-基，改善介面薄膜的生長情況，幫助薄膜沉積。臨場電漿處理則是在高介電薄膜沉積中，以臨場電漿的方式，對薄膜進行處理，進而使薄膜更加緻密。使用上電極為E-Gun鍍製的Ti電極，下電極則是RF sputter鍍製的Pt電極。鍍製電極前會進行Rapid thermal annealing（RTA）退火處理和Forming gas annealing（FGA）。
本實驗研究重點在於利用不同參數下的表面電漿處理和臨場電漿處理，對於介面層和高介電薄膜的影響，並探討不同參數下薄膜電性、熱處理溫度對電性的影響和熱穩定性等，同時也一併探討該製程之機制。

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