為了增進元件的運作速度及降低製程成本，半導體元件尺寸發展趨向於微小化，但隨著半導體製程技術跨入到65或45奈米世代，元件尺寸微縮便面臨到了物理極限的瓶頸。因此在矽製程技術中導入新的材料便成了持續增進元件效能的重要方式，例如:內連線的高導電率、低介電材料，閘極的高介電材料以及取代矽基材的絕緣層上矽晶(SOI)。矽鍺(SiGe)被認為是最有機會取代矽，成為半導體下一個世代的替代材料。本研究利用超高真空化學氣相沉積法(UHVCVD)以各種方式成長高品質的矽鍺虛擬基材及新穎的矽鍺奈米結構。
本研究分別提出以[矽鍺/矽碳(或矽)/矽鍺]堆疊結構及多重鍺量子點(quantum dot)作為緩衝層(buffer layer)來成長高品質的應變釋放矽鍺虛擬基材。實驗結果證實矽鍺磊晶層的穿越差排(threading dislocation)密度及殘留應變(residual strain)可以有效地降低。本文針對這些成長方式提出了相異於傳統成分漸變緩衝層(compositionally graded buffer layer)應變釋放的機制探討。另外，利用這些矽鍺虛擬基材技術所製作的形變矽n型金氧半場效電晶體(strained-Si n-MOSFET)擁有良好的元件操作特性，有效電子遷移率(effective electron mobility)較傳統無應變矽基元件大幅地提升80~95%，顯示矽鍺虛擬基材在未來形變矽元件的製造上是不可或缺的技術之一。
由於矽鍺在未來光電元件上的潛在應用，自組裝(self-assembled)鍺量子點在近年來已引起廣泛的興趣與研究。本研究提出以矽披覆鍺量子點的方式來成長自組裝矽鍺奈米環(nano-ring)。在矽披覆的過程中，鍺量子點由多面體半球型轉變為四面體金字塔型，最後形成矽鍺奈米環。由拉曼光譜推測出奈米環的形成機制是由應變釋放所造成;因此，利用不同成份的矽鍺披覆鍺量子點，奈米環形成的尺寸可以進而獲得控制。另外，由於具有較高的量子點密度及較高角度的晶面，矽披覆金字塔型的量子點因而擁有最優良的場發射特性。
本研究提出使用SiCH6處理矽基材表面以改變鍺量子點在超高真空化學氣相沉積法低溫下的成長行為。藉由精確的SiCH6表面處理，鍺量子點可以由原本不均勻的長條型轉變為高均勻性的多面體半球型;其成長模式轉變的機制為: (1)幾乎被氫鍵所保護的表面限制了鍺量子點的成核位置，(2)在表面被碳鍵所排斥的鍺原子加入已形成的鍺量子點。實驗結果證明:相較於長條型鍺量子點，經SiCH6表面處理所成長的半球型鍺量子點具有較優良的電子場發射特性。
在成長多重鍺量子點過程中，使用預混合(pre-intermixing)的成長方式可以有效地改善鍺量子點的均勻度並避免圓錐形缺陷(cone-shaped defect)的產生。此外，隨著量子點層數增加而造成量子點密度快速下降的情況也同時獲得改善。由於擁有較強的激發光譜特性，使用預混合方式成長多重鍺量子點是未來在製作矽基光電元件上相當重要的一項技術。
本研究亦以即時穿透式電子顯微鏡(in-situ TEM)觀察鍺量子點在矽基材(113)晶面上成長及高溫下退火的行為。大部分的自組裝鍺量子點形成於矽表面的階梯(step)處。藉由Moire條紋的分析得知，鍺量子點在高溫退火時便持續遭遇到嚴重的矽鍺相互擴散;而在最後的階段，由於含有大量的矽，鍺量子點以自分解的方式消失。

The Si-based metal-oxide-silicon field-effect-transistor (MOSFET) is currently the device of choice for state-of-the-art digital electronics. Historically, the performance improvements of MOSFETs have been attained by shrinking device dimensions such as gate length and gate oxide thickness. However, the practical benefit of scaling is declining as physical limits are approached. Therefore, the incorporation of new materials, from the interconnect level (low-k), to the gate stack (high-k), and even the substrate [silicon-on-insulator (SOI)] is emerging as an important way to continue to improve circuit performance. Si1-xGex/Si heterostructures have been under extensive study because they can provide adjustable bandgaps and improved carrier mobilities compared with Si homostructures. In this dissertation, the growth of high-quality SiGe virtual substrates and novel SiGe nanostructures by ultra-high vacuum chemical vapor deposition (UHV/CVD) was demonstrated.
An intermediate Si or Si1-yCy layer in the Si1-xGex film, replacing the conventionally graded buffer layer, was used to form the high-quality relaxed SiGe substrates. The results indicate that the Si (Si1-yCy) layer serves as preferential nucleation sites for misfit dislocation array to relax the mismatch strain during the SiGe overgrowth. Threading dislocation density and the residual strain remained in those SiGe uniform epilayers were found to be reduced effectively. The shallow pits on the surface related to strain relief were also found to be suppressed. The 800-nm-thick Si1-xGex/Si1-yCy/Si1-xGex (x=0.2, y=0.014) heterostructure was demonstrated to have a threading dislocation density of 5.4□105 cm-2 with a residual strain of only 2 %. Effective electron mobility for the strained-Si device with this novel substrate technology was found to be 95% higher than that of Si control device [Chapter 5 and 6].
High-quality SiGe films with a buffer layer containing Ge quantum dots have also been grown by UHV/CVD. Threading dislocation density and the residual strain remained in the SiGe uniform epilayers were found to reduce drastically with the increasing period of Ge dots/Si bilayers up to 10 periods. The Si0.8Ge0.2 film grown on a 10-period Ge dots/Si bilayers was demonstrated to have a threading dislocation density of 2.0□105 cm-2 with a residual strain of only 11%. The resulting SiGe films with multiple Ge quantum dots layers also exhibit distinct characteristics compared with the modified Frank-Reed (MFR) mechanism observed in compositionally graded layers structures. Effective electron mobility for the strained-Si device with the multiple Ge quantum dots buffer layer was found to be 90% higher than that of Si control device. These experimental results demonstrate the great promise of strained-Si devices and suggest a path for future investigations [Chapter 7].
Epitaxial deposition of Ge/Si(001) heterostructures can be regarded as a well understood model system for self-assembly techniques. Nano-rings with an average height and diameter of 1.2 and 65 nm, respectively, were observed to from in Si-capped Ge quantum dots grown at 600 ℃ by UHV/CVD. The nano-rings were captured with the rapid cooling of the samples with appropriate amount of Si capping. Based on the results of transmission electron microscopy and Raman spectroscopy, the formation of nano-rings is attributed to alloying and strain relief in the Si/Ge/(001)Si system. The self-assembly of nano-rings provides a useful scheme to form ultrasmall ring-like structure and facilitates the characterization of the physical properties of unconventional quantum structures. In addition, field emission characteristics of self-assembled Si-capped Ge quantum dots with different Si coverages have also been investigated. With an appropriate amount of Si capping to form the truncated pyramids, the field-emission behaviors of Si-capped Ge quantum dots were found to be improved significantly. Based on transmission electron microscope examinations, this improvement can be attributed to the sharper apex and a higher density of the truncated pyramids as compared to the uncapped domes. However, further Si capping could degrade the field emission properties owing to the flattening of Ge islands features [Chapter 8].
The SiCH6-mediations were used to modify the Stranski-Krastanow (S-K) growth mode of Ge dots on Si(001) at 550 ℃ by UHV/CVD. With the appropriate SiCH6-mediation, the elongated Ge hut clusters can be transformed to highly uniform multi-faceted domes with a high Ge composition at the core. The modified growth mode for the formation of SiCH6-mediated Ge dots can be attributed to (i) an almost hydrogen-passivated Si surface to limit the nucleation sites for dot formation, and (ii) the incorporation of Ge atoms, repelled by the C-rich areas, into the existing Ge dots. These SiCH6-mediated dots were found to exhibit the improved field emission characteristics compared to shallow Ge huts. These experimental results demonstrate a useful scheme to utilize self-assembled Ge QDs as field-emitter arrays [Chapter 9].
The pre-intermixing treatments of Ge quantum dots were demonstrated to be effective in improving the size uniformity and preventing the formation of cone-shaped defects (CSDs) in the Ge-dot multilayers. The rapid decrease in density of Ge dots with the number of layers is also alleviated. The strain relaxation of Si/Ge multifold layers is characterized by high-resolution rocking curves. The pre-intermixed Ge dots have stronger photoluminescence (PL) intensity due to a higher Ge dots density and a lower cone-shaped defect density. The results indicate that pre-intermixing treatment of Ge quantum dots is a promising technique for the fabrication of emitters and detectors in Si-based optoelectronic devices [Chapter 10].
The growth and evolution of the Ge islands on Si(113) during the high-temperature annealing have been investigated by in-situ TEM examinations. Most of Ge islands on Si(113) were found to form at the edges of surface terraces. The analysis of Moiré pattern reveals that the Ge islands undergo the serious Si-Ge intermixing during the annealing. In addition, the decomposition of the severely intermixed Ge islands with further annealing was first observed [Chapter 11].

Chapter 1
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Chapter 2
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Chapter 3
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3.24. K. Eberl. M. O. Lipinski, Y. M. Manz, W. Winter, N. Y. Jin-Phillipp, and O. G. Schmidt, “Self-Assembled Quantum Dots for Optoelectronic Devices on Si and GaAs,” Physica E 9, 164-174 (2001).
3.25. A. J. Pidduck, D. J. Robbins, A. G. Cullis, W. Y. Leong, and A. M. Pitt, “Evolution of Surface Morphology and Strain during SiGe Epitaxy,” Thin Solid Films 222, 78-84 (1992).
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3.28. O. G. Schmidt, C. Lange, and K. Eberl, “Photoluminescence Study of the Initial Stages of Island Formation for Ge Pyramids/Domes and Hut Clusters on Si(001),” Appl. Phys. Lett. 75, 1905-1907 (1999).
3.29. E. Sutter, P. Sutter, and J. E. Bernard, “Extended Shape Evolution of Low Mismatch Si1-xGex Alloy Islands on Si(100),” Appl. Phys. Lett. 84, 2262-2264 (2004).
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3.31. F. M. Ross, J. Tersoff, and R. M. Tromp, “Coarsening of Self-Assembled Ge Quantum Dots on Si(001),” Phys. Rev. Lett. 80, 984-987 (1998).
3.32. J. A. Floro, E. Chason, L. B. Freund, R. D. Twesten, R. Q. Hwang, and G. A. Lucadamo, “Evolution of Coherent Islands in Si1-xGex/Si(001),” Phys. Rev. B 59, 1990-1998 (1999).
3.33. E. Sutter, P. Sutter, P. Zahl, P. Rugheimer, and M. G. Lagally, “Spontaneous Transition from Epitaxially Constrained to Equilibrium Ge Nanocrystals on Silicon-on-Insulator (100),” Surf. Sci. 532, 785-788 (2003).
3.34. M. Tomitori, K. Watanabe, M. Kobayashi, and O. Nishikawa, “STM Study of the Ge Growth Mode on Si(001) Substrates,” Appl. Surf. Sci. 76-77, 322-328 (1994).
3.35. G. Medeiros-Ribeiro, A. M. Brathovski, T. I. Kamins, D. A. A. Ohlberg, and R. S. Williams, “Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes,” Science 279, 353-355 (1998).
3.36. Y. H. Xie, S. B. Samavedam, M. Bulsara, T. A. Langdo, and E. A. Fitzgerald, “Relaxed Template for Fabricating Regularly Distributed Quantum Dot Arrays,” Appl. Phys. Lett. 71, 3567-3569 (1997).
3.37. E. S. Kim, N. Usami, and Y. Shiraki, “Control of Ge Dots in Dimension and Position by Selective Epitaxial Growth and their Optical Properties,” Appl. Phys. Lett. 72, 1617-1619 (1998).
3.38. A. Sgarlata, P. D. Szkutnik, A. Balzarotti, N. Motta, and F. Rosei, “Self-Ordering of Ge Islands on Step-Bunched Si(111) Surfaces,” Appl. Phys. Lett. 83, 4002-4004 (2003).
3.39. G. Springhilz, M. Pinczolits, V. Holy, S. Zerlauth, I. Vavra, and G. Bauer, “Vertical and Lateral Ordering in Self-Organized Quantum Dot Superlattices,” Physica E 9, 149-163 (2001).
3.40. J. Tersoff, C. Teichert, and M. G. Lagally, “Self-Organization in Growth of Quantum Dot Superlattices,” Phys. Rev. Lett. 76, 1675-1678 (1996).
3.41. C. Teichert, M. G. Lagally, L. J. Peticolas, J. C. Bean, and J. Tersoff, “Stress-Induced Self-Organization of Nanoscale Structures in SiGe/Si Multilayer Films,” Phys. Rev. B 53, 16334-16337 (1996).
3.42. E. Mateeva, P. Sutter, J. C. Bean, and M. G. Lagally, “Mechanism of Organization of Three-Dimensional Islands in SiGe/Si Multilayers,” Appl. Phys. Lett. 71, 3233-3235 (1997).
3.43. O. Kienzle, F. Ernst, M. Rühle, O. G. Schmidt, and K. Eberl, “Germanium "Quantum Dots" Embedded in Silicon: Quantitative Study of Self-Alignment and Coarsening,” Appl. Phys. Lett. 74, 269-271 (1999).
3.44. O. G. Schmidt, O. Kienzle, Y. Hao, K. Eberl, and F. Ernst, “Modified Stranski–Krastanov Growth in Stacked Layers of Self-Assembled Islands,” Appl. Phys. Lett. 74, 1272-1274 (1999).
3.45. A. O. Orlov, I. Amlani, G. H. Bernstein, C. S. Lent, and G. L. Snider, “Realization of a Functional Cell for Quantum-Dot Cellular Automata,” Science 277, 928–930 (1997).
3.46. O. G. Schmidt, U. Denker, M. Dashiell, N. Y. Jin-Phillipp, K. Eberl, R. Schreiner, H. Gräbeldinger, H. Schweizer, S. Christiansen, and F. Ernst, “Laterally Aligned Ge/Si Islands: A New Concept for Faster Field-Effect Transistors,” Mater. Sci. Eng. B 89, 101-105 (2002).
3.47. J.-H. Zhu, K. Brunner, and G. Abstreiter, “Two-Dimensional Ordering of Self-Assembled Ge Islands on Vicinal Si(001) Surfaces with Regular Ripples,” Appl. Phys. Lett. 73, 620-622 (1998).
3.48. H. Omi and T. Ogino, “Self-Organization of Ge Islands on High-Index Si Substrates,” Phys. Rev. B 59, 7521-7528 (1999).
3.49. A. Ronda and I. Berbezier, “Self-Patterned Si Surfaces as Templates for Ge Islands Ordering,” Physica E 23, 370-376 (2004).
3.50. S. Y. Shiryaev, F. Jensen, J. L. Hansen, J. W. Petersen, and A. N. Larsen, “Nanoscale Structuring by Misfit Dislocations in Si1-xGex/Si Epitaxial Systems,” Phys. Rev. Lett. 78, 503-506 (1997).
3.51. H. J. Kim, Z. M. Zhao, and Y. H. Xie, “Three-Stage Nucleation and Growth of Ge Self-Assembled Quantum Dots Grown on Partially Relaxed SiGe Buffer Layers,” Phys. Rev. B 68, 205312-1-7 (2003).
3.52. T. I. Kamins, D. A. A. Ohlberg, R. S. Williams, W. Zhang, and S. Y. Chou, “Positioning of Self-Assembled, Single-Crystal, Germanium Islands by Silicon Nanoimprinting,” Appl. Phys. Lett. 74, 1773-1775 (1999).
3.53. T. I. Kamins and R. S. Williams, “Lithographic Positioning of Self-Assembled Ge Islands on Si(001),” Appl. Phys. Lett. 71, 1201-1203 (1997).
3.54. G. Jin, J. L. Liu, S. G. Thomas, Y. H. Luo, K. L. Wang, and B.-Y. Nguyen, “Controlled Arrangement of Self-Organized Ge Islands on Patterned Si (001) Substrates,” Appl. Phys. Lett. 75, 2752-2754 (1999).
3.55. G. Jin, J. L. Liu, and K. L. Wang, “Regimented Placement of Self-Assembled Ge Dots on Selectively Grown Si Mesas,” Appl. Phys. Lett. 76, 3591-3593 (2000).
3.56. L. Vescan, T. Stoica, O. Chretien, M. Goryll, E. Mateeva, and A. Mück, “Size Distribution and Electroluminescence of Self- Assembled Ge Dots,” J. Appl. Phys. 87, 7275-7282 (2000).
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3.60. P. De Padova, P. Perfetti, R. Pizzoferrato, and M. Casalboni, “Comment on "Germanium Dots with Highly Uniform Size Distribution Grown on Si(100) Substrate by Molecular Beam Epitaxy" [Appl. Phys. Lett. 71, 3543 (1997)],” Appl. Phys. Lett. 73, 2378-2379 (1998).
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3.62. W.-H. Chang, A. T. Chou, W. Y. Chen, H. S. Chang, T. M. Hsu, Z. Pei, P. S. Chen, S. W. Lee, L. S. Lai, S. C. Lu, and M.-J. Tsai, “Room-Temperature Electroluminescence at 1.3 and 1.55 µm from Ge/Si Self-Assembled Quantum Dots,” Appl. Phys. Lett. 83, 2958-2960 (2003).
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3.65. O. G. Schmidt, K. Eberl, and Y. Rau, “Strain and Band-Edge Alignment in Single and Multiple Layers of Self-Assembled Ge/Si and GeSi/Si Islands,” Phys. Rev. B 62, 16715-16720 (2000).
3.66. K. Rim, J. L. Hoyt, and F. Gibbons, “Fabrication and Analysis of Deep Submicron Strained-Si N-MOSFET’s,” IEEE Trans. Electron Devices 47, 1406-1415 (2001).
3.67. M. L. Lee, E. A. Fitzgerald, M. T. Matthew, T. Currie, and A. Lochtefeld, “Strained Si, SiGe, and Ge Channels for High-Mobility Metal-Oxide-Semiconductor Field-Effect Transistors,” J. Appl. Phys. 97, 011101-1~011101-27 (2005).
3.68. D. Temple, “Recent Progress in Field Emitter Array Development for High Performance Applications,” Mater. Sci. Eng. R 24, 185-239 (1999).
3.69. H. C. Lo, D. Das, J. S. Hwang, K. H. Chen, C. H. Hsu, C. F. Chen, and L. C. Chen, “ SiC-Capped Nanotip Arrays for Field Emission with Ultralow Turn-On Field,” Appl. Phys. Lett. 83, 1420-1422 (2003).
3.70. W. K. Wong, F. Y. Meng, Q. Li, F. C. K. Au, I. Bello, and S. T. Lee, “Field-Emission Properties of Multihead Silicon Cone Arrays Coated with Cesium,” Appl. Phys. Lett. 80, 877-879 (2002).
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Chapter 4
4.1. B. S. Meyerson, “UHV/CVD Growth of Si and Si:Ge Alloys: Chemistry, Physics, and Device Applications,” Proc. IEEE 80, 1592-1608 (1992).
4.2. A. Ishizaka and Y. Shiraki, “Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE,” J. Electrochem. Soc. 133, 666-671 (1976).
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4.4. A. D. Lambert, B. M. McGregor, R. J. H. Morris, C. P. Parry, D. P. Chu, G. A. Cooke, P. J. Phillips, T. E. Whall, and E. H. C. Parker, “Contamination Issues during Atomic Hydrogen Surfactant Mediated Si MBE,” Semicond. Sci. Technol. 14, L1-L4 (1999).
4.5. D. G. Schmmel, “Defect Etch for <100> Silicon Evaluation,” J. Electrochem. Soc. 126, 479-482 (1979).
4.6. J. C. Chang, P. M. Mooney, F. Dacol, and J. O. Chu, “Measurements of Alloy Composition and Strain in Thin GexSi1–x Layers,” J. Appl. Phys. 75, 8098-8108 (1994).
4.7. O. G. Schmidt, C. Lange, and K. Eberl, “Photoluminescence Study of the Initial Stages of Island Formation for Ge Pyramids/Domes and Hut Clusters on Si(001),” Appl. Phys. Lett. 75, 1905-1907 (1999).
4.8. K. Rim, J. L. Hoyt, and F. Gibbons, “Fabrication and Analysis of Deep Submicron Strained-Si N-MOSFET’s,” IEEE Trans. Electron Devices 47, 1406-1415 (2001).
Chapter 5
5.1. T. Vogelsang and K. R. Hofmann, “Electron Transport in Strained Si Layers on Si1–xGex Substrates,” Appl. Phys. Lett. 63, 186-188 (1993).
5.2. K. Rim, J. L. Hoyt, and F. Gibbons, “Fabrication and Analysis of Deep Submicron Strained-Si N-MOSFET’s,” IEEE Trans. Electron Devices 47, 1406-1415 (2001).
5.3. M. L. Lee, E. A. Fitzgerald, M. T. Matthew, T. Currie, and A. Lochtefeld, “Strained Si, SiGe, and Ge Channels for High-Mobility Metal-Oxide-Semiconductor Field-Effect Transistors,” J. Appl. Phys. 97, 011101-1~011101-27 (2005).
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5.6. P. M. Mooney, “Strain Relaxation and Dislocations in SiGe/Si Structures,” Mater. Sci. Eng. R 17, 105-146 (1996).
5.7. P. M. Mooney, J. L. Jordan-Sweet, K. Ismail, J. O. Chu, R. M. Feenstra, and F. K. LeGoues, “Relaxed Si0.7Ge0.3 Buffer Layers for High-Mobility Devices,” Appl. Phys. Lett. 67, 2373-2375 (1995).
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5.9. D. G. Schmmel, “Defect Etch for <100> Silicon Evaluation,” J. Electrochem. Soc. 126, 479-482 (1979).
5.10. L. Di Gaspare, E. Palange, G. Capellini, and F. Evangelisti, “Strain Relaxation by Pit Formation in Epitaxial SiGe Alloy Films Grown on Si(001),” J. Appl. Phys. 88, 120-123 (2000).
5.11. Y. H. Luo, J. Wan, R. L. Forrest, J. L. Liu, G. Jin, M. S. Goorsky, and K. L. Wang, “Compliant Effect of Low-Temperature Si Buffer for SiGe Growth,” Appl. Phys. Lett. 78, 454-456 (2001).
5.12. G. Z. Pan, K. N. Tu, and S. Prussin, “Microstructural Evolution of {113} Rodlike Defects and {111} Dislocation Loops in Silicon-Implanted Silicon,” Appl. Phys. Lett. 71, 659-661 (1997).
5.13. J. C. Chang, P. M. Mooney, F. Dacol, and J. O. Chu, “Measurements of Alloy Composition and Strain in Thin GexSi1–x Layers,” J. Appl. Phys. 75, 8098-8108 (1994).
5.14. K. Lyutovich, M. Bauer, E. Kasper, H.-J. Herzog, T. Perova, R. Maurice, C. Hofer, and C. Teichert, “Thins SiGe Buffers with High Ge Content for N-MOSFET’s,” Mater. Sci. Eng. B 89, 341-345 (2002).
5.15. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, “On the Universality of Inversion Layer Mobility in Si MOSFET’s: Part I-Effects of Substrate Impurity Concentration,” IEEE Trans. Electron Devices 41, 2357-2362 (1994).
Chapter 6
6.1. Y. H. Xie, D. Monroe, E. A. Fitzgerald, P. J. Silverman, F. A. Theil, and G. P. Watson, “Very High Mobility Two-Dimensional Hole Gas in Si/GexSi1–x/Ge Structures Grown by Molecular Beam Epitaxy,” Appl. Phys. Lett. 63, 2263-2264 (1993).
6.2. T. Vogelsang and K. R. Hofmann, “Electron Transport in Strained Si Layers on Si1–xGex Substrates,” Appl. Phys. Lett. 63, 186-188 (1993).
6.3. T. Mizuno, S. Takagi, N. Sugiyama, H. Satake, A. Kurobe, and A. Toriumi, “Electron and Hole Mobility Enhancement in Strained-Si MOSFET’s on SiGe-on-Insulator Substrates Fabricated by SIMOX Technology,” IEEE Electron Device Lett. 21, 230-232 (2000).
6.4. K. Rim, J. L. Hoyt, and F. Gibbons, “Fabrication and Analysis of Deep Submicron Strained-Si N-MOSFET’s,” IEEE Trans. Electron Devices 47, 1406-1415 (2001).
6.5. M. L. Lee, E. A. Fitzgerald, M. T. Matthew, T. Currie, and A. Lochtefeld, “Strained Si, SiGe, and Ge Channels for High-Mobility Metal-Oxide-Semiconductor Field-Effect Transistors,” J. Appl. Phys. 97, 011101-1~011101-27 (2005).
6.6. P. M. Mooney, “Strain Relaxation and Dislocations in SiGe/Si structures,” Mater. Sci. Eng. R 17, 105-146 (1996).
6.7. K. Sawano, S. Koh, Y. Shiraki, Y. Hirose, T. Hattori, and K. Nakagawa, “Mobility Enhancement in Strained Si Modulation-Doped Structures by Chemical Mechanical Polishing,” Appl. Phys. Lett. 82, 412-414 (2003).
6.8. S. W. Lee, H. C. Chen, L. J. Chen, Y. H. Peng, C. H. Kuan, and H. H. Cheng, “Effects of Low-Temperature Si Buffer Layer Thickness on the Growth of SiGe by Molecular Beam Epitaxy,” J. Appl. Phys. 92, 6880-6885 (2002).
6.9. M. Bauer, M. Oehme, K. Lyutovich, and E. Kasper, “Ion Assisted MBE Growth of SiGe Nanostructures,” Thin Solid Film 336, 104-108 (1998).
6.10. Y. H. Luo, J. L. Liu, G. Jin, J. Wan, K. L. Wang, C. D. Moore, M. S. Goorsky, C. Chih, and K. N. Tu, “Effective Compliant Substrate for Low-Dislocation Relaxed SiGe Growth,” Appl. Phys. Lett. 78, 1219-1221 (2001).
6.11. D. G. Schmmel, “Defect Etch for <100> Silicon Evaluation,” J. Electrochem. Soc. 126, 479-482 (1979).
6.12. L. Di Gaspare, E. Palange, G. Capellini, and F. Evangelisti, “Strain Relaxation by Pit Formation in Epitaxial SiGe Alloy Films Grown on Si(001),” J. Appl. Phys. 88, 120-123 (2000).
6.13. S. W. Lee, P. S. Chen, M.-J. Tsai, C. T. Chia, C. W. Liu, and L. J. Chen, “The Growth of High-Quality SiGe Films with an Intermediate Si Layer,” Thin Solid Film 447-448, 302-305 (2004).
6.14. M. A. Lutz, R. M. Feenstra, F. K. LeGoues, P. M. Mooney, and J. O. Chu, “Influence of Misfit Dislocations on the Surface Morphology of Si1–xGex films,” Appl. Phys. Lett. 66, 724-726 (1995).
6.15. J. C. Chang, P. M. Mooney, F. Dacol, and J. O. Chu, “Measurements of Alloy Composition and Strain in Thin GexSi1–x Layers,” J. Appl. Phys. 75, 8098-8108 (1994).
6.16. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, “On the Universality of Inversion Layer Mobility in Si MOSFET’s: Part I-Effects of Substrate Impurity Concentration,” IEEE Trans. Electron Devices 41, 2357-2362 (1994).
Chapter 7
7.1. T. Vogelsang and K. R. Hofmann, “Electron Transport in Strained Si Layers on Si1–xGex Substrates,” Appl. Phys. Lett. 63, 186-188 (1993).
7.2. T. Mizuno, S. Takagi, N. Sugiyama, H. Satake, A. Kurobe, and A. Toriumi, “Electron and Hole Mobility Enhancement in Strained-Si MOSFET’s on SiGe-on-Insulator Substrates Fabricated by SIMOX Technology,” IEEE Electron Device Lett. 21, 230-232 (2000).
7.3. M. L. Lee, E. A. Fitzgerald, M. T. Matthew, T. Currie, and A. Lochtefeld, “Strained Si, SiGe, and Ge Channels for High-Mobility Metal-Oxide-Semiconductor Field-Effect Transistors,” J. Appl. Phys. 97, 011101-1~011101-27 (2005).
7.4. E. A. Fitzgerald, Y.-H. Xie, D. Monroe, P. J. Silverman, J. M. Kuo, A. R. Kortan, F. A. Thiel, and B. E. Weir, “Relaxed GexSi1–x Structures for III–V Integration with Si and High Mobility Two-Dimensional Electron Gases in Si,” J. Vac. Sci. Technol. B 10, 1807-1819 (1992).
7.5. F. K. LeGoues, B. S. Meyerson, and J. F. Morar, “Anomalous Strain Relaxation in SiGe Thin Films and Superlattices,” Phys. Rev. Lett. 66, 2903-2906 (1991).
7.6. P. M. Mooney, “Strain Relaxation and Dislocations in SiGe/Si Structures,” Mater. Sci. Eng. R 17, 105-146 (1996).
7.7. P. M. Mooney, J. L. Jordan-Sweet, K. Ismail, J. O. Chu, R. M. Feenstra, and F. K. LeGoues, “Relaxed Si0.7Ge0.3 Buffer Layers for High-Mobility Devices,” Appl. Phys. Lett. 67, 2373-2375 (1995).
7.8. P. M. Mooney, J. L. Jordan-Sweet, J. O. Chu, and F. K. LeGoues, “Evolution of Strain Relaxation in Step-Graded SiGe/Si Structures,” Appl. Phys. Lett. 66, 3642-3644 (1995).
7.9. S. W. Lee, H. C. Chen, L. J. Chen, Y. H. Peng, C. H. Kuan, and H. H. Cheng, “Effects of Low-Temperature Si Buffer Layer Thickness on the Growth of SiGe by Molecular Beam Epitaxy,” J. Appl. Phys. 92, 6880-6885 (2002).
7.10. M. Bauer, M. Oehme, K. Lyutovich, and E. Kasper, “Ion Assisted MBE Growth of SiGe Nanostructures,” Thin Solid Film 336, 104-108 (1998).
7.11. Y. H. Luo, J. L. Liu, G. Jin, J. Wan, K. L. Wang, C. D. Moore, M. S. Goorsky, C. Chih, and K. N. Tu, “Effective Compliant Substrate for Low-Dislocation Relaxed SiGe Growth,” Appl. Phys. Lett. 78, 1219-1221 (2001).
7.12. G. Medeiros-Ribeiro, A. M. Brathovski, T. I. Kamins, D. A. A. Ohlberg, and R. S. Williams, “Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes,” Science 279, 353-355 (1998).
7.13. S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, T. Y. Chien, and C. T. Chia, “Self-Assembled Nanorings in Si-Capped Ge Quantum Dots on (001)Si,” Appl. Phys. Lett. 83, 5283-5285 (2003).
7.14. D. G. Schmmel, “Defect Etch for <100> Silicon Evaluation,” J. Electrochem. Soc. 126, 479-482 (1979).
7.15. J. Tersoff, C. Teichert, and M. G. Lagally, “Self-Organization in Growth of Quantum Dot Superlattices,” Phys. Rev. Lett. 76, 1675-1678 (1996).
7.16. A. Sakai, K. Sugimoto, T. Yamamoto, M. Okada, H. Ikeda, Y. Yasuda, and S. Zaima, “Reduction of Threading Dislocation Density in SiGe Layers on Si (001) Using a Two-Step Strain-Relaxation Procedure,” Appl. Phys. Lett. 79, 3398-3400 (2001).
7.17. M. M. Rahman, H. Matada, T. Tambo, and C. Tatsuyama, “Growth of Si0.75Ge0.25 Alloy Layers Grown on Si(001) Substrates Using Step-Graded Short-Period (Sim/Gen)N Superlattices,” J. Appl. Phys. 90, 202-208 (2001).
7.18. S. W. Lee, P. S. Chen, M.-J. Tsai, C. T. Chia, C. W. Liu, and L. J. Chen, “The Growth of High-Quality SiGe Films with an Intermediate Si Layer,” Thin Solid Film 447-448, 302-305 (2004).
7.19. J. C. Chang, P. M. Mooney, F. Dacol, and J. O. Chu, “Measurements of Alloy Composition and Strain in Thin GexSi1–x Layers,” J. Appl. Phys. 75, 8098-8108 (1994).
7.20. P. S. Chen, Z. Pei, Y. H. Peng, S. W. Lee, and M.-J. Tsai, “Boron Mediation on the Growth of Ge Quantum Dots on Si (100) by Ultra High Vacuum Chemical Vapor Deposition System,” Mater. Sci. Eng. B 108, 213-218 (2004).
7.21. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, “On the Universality of Inversion Layer Mobility in Si MOSFET’s: Part I-Effects of Substrate Impurity Concentration,” IEEE Trans. Electron Devices 41, 2357-2362 (1994).
Chapter 8
8.1. O. P. Pchelyakov, Y. B. Bolkhovityanov, A. V. Dvurechenskiĭ, L. V. Sokolov, A. I. Nikiforov, A. I. Yakimov, and B. Voigtländer, “Silicon-Germanium Nanostructures with Quantum Dots: Formation Mechanisms and Electrical Properties,” Semiconductors 34, 1229-2347 (2000).
8.2. O. G. Schmidt and K. Eberl, “Self-Assembled Ge/Si Dots for Faster Field-Effect Transistors,” IEEE Trans. Electron Devices 48, 1175-1179 (2001).
8.3. K. Eberl. M. O. Lipinski, Y. M. Manz, W. Winter, N. Y. Jin-Phillipp, and O. G. Schmidt, “Self-Assembled Quantum Dots for Optoelectronic Devices on Si and GaAs,” Physica E 9, 164-174 (2001).
8.4. M. Stoffel, U. Denker, and O. G. Schmidt, “Electroluminescence of Self-Assembled Ge Hut Clusters,” Appl. Phys. Lett. 82, 3236-3238 (2003).
8.5. W.-H. Chang, A. T. Chou, W. Y. Chen, H. S. Chang, T. M. Hsu, Z. Pei, P. S. Chen, S. W. Lee, L. S. Lai, S. C. Lu, and M.-J. Tsai, “Room-Temperature Electroluminescence at 1.3 and 1.55 µm from Ge/Si Self-Assembled Quantum Dots,” Appl. Phys. Lett. 83, 2958-2960 (2003).
8.6. V. N. Tondare, B. I. Birajdar, N. Pradeep, D. S. Joag, A. Lobo, and S. K. Kulkarni, “Self-Assembled Ge Nanostructures as Field Emitters,” Appl. Phys. Lett. 77, 2394-2396 (2000).
8.7. P. Sutter and M. G. Lagally, “Embedding of Nanoscale 3D SiGe Islands in a Si Matrix,” Phys. Rev. Lett. 81, 3471-3474 (1998).
8.8. N. Usami, M. Miura, Y. Ito, Y. Araki, and Y. Shiraki, “Drastic Increase of the Density of Ge Islands by Capping with a Thin Si Layer,” Appl. Phys. Lett. 77, 217-219 (2000).
8.9. A. Rastelli, M. Kummer, and H. von Känel, “Reversible Shape Evolution of Ge Islands on Si(001),” Phys. Rev. Lett. 87, 256101-1~256101-4 (2001).
8.10. T. I. Kaimins, G. Mederiros-Ribeiros, D. A. A. Ohlberg, and R. Stanely Williams, “Evolution of Ge Islands on Si(001) During Annealing,” J. Appl. Phys. 85, 1159-1171 (1999).
8.11. F. M. Ross, J. Tersoff, and R. M. Tromp, “Coarsening of Self-Assembled Ge Quantum Dots on Si(001),” Phys. Rev. Lett. 80, 984-987 (1998).
8.12. G. Medeiros-Ribeiro, A. M. Brathovski, T. I. Kamins, D. A. A. Ohlberg, and R. S. Williams, “Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes,” Science 279, 353-355 (1998).
8.13. D. Granados and J. García, “In(Ga)As Self-Assembled Quantum Ring Formation by Molecular Beam Epitaxy,” Appl. Phys. Lett. 82, 2401-2403 (2003).
8.14. A. Lorke, R. J. Luyken, A. O. Govorov, J. P. Kotthaus, J. M. Garcia, and P. M. Petroff, “Spectroscopy of Nanoscopic Semiconductor Rings,” Phys. Rev. Lett. 84, 2223-2226 (2000).
8.15. J. C. Lin and G. Y. Guo, “Current-Spin Density-Functional Theory of the Electronic and Magnetic Properties of Quantum Dots and Quantum Rings,” Phys. Rev. B 65, 035304-1~035304-10 (2002).
8.16. J. Liu, A. Zaslavsky, B. R. Perkins, C. Aydin, and L. B. Freund, “Single-Hole Tunneling into a Strain-Induced SiGe Quantum Ring,” Phys. Rev. B 66, 161304-1~161304-4 (2002).
8.17. J. Liu, A. Zaslavsky, and L. B. Freund, “Strain-Induced Quantum Ring Hole States in a Gated Vertical Quantum Dot,” Phys. Rev. Lett. 89, 096804 (2002).
8.18. E. Sutter, P. Sutter, and J. E. Bernard, “Extended Shape Evolution of Low Mismatch Si1–xGex Alloy Islands on Si(100),” Appl. Phys. Lett. 84, 2262-2264 (2004).
8.19. A. V. Kolobov, K. Morita, K. M. Itoh, and E. E. Haller, “A Raman Scattering Study of Self-Assembled Pure Isotope Ge/Si(100) Quantum Dots,” Appl. Phys. Lett. 81, 3855-3857 (2002).
8.20. F. Cerdeira, A. Pinczuk, J. C. Bean, B. Batlogg, and B. A. Wilson, “Raman Scattering from GexSi1–x/Si Strained-Layer Superlattices,” Appl. Phys. Lett. 45, 1138-1140 (1984).
8.21. J. Cui, Q. He, X. M. Jiang, Y. L. Fan, X. J. Yang, F. Xue, and Z. M. Jiang, “Self-Assembled SiGe Quantum Rings Grown on Si(001) by Molecular Beam Epitaxy,” Appl. Phys. Lett. 83, 2907-2909 (2003).
8.22. H. C. Lo, D. Das, J. S. Hwang, K. H. Chen, C. H. Hsu, C. F. Chen, and L. C. Chen, “ SiC-Capped Nanotip Arrays for Field Emission with Ultralow Turn-on Field,” Appl. Phys. Lett. 83, 1420-1422 (2003).
8.23. R. H. Fowler and L. Nordheim, “Electron Emission in Intense Electric Fields,” Proc. R. Soc. London, Ser. A 119, 173-181 (1928).
8.24. W. K. Wong, F. Y. Meng, Q. Li, F. C. K. Au, I. Bello, and S. T. Lee, “Field-Emission Properties of Multihead Silicon Cone Arrays Coated with Cesium,” Appl. Phys. Lett. 80, 877-879 (2002).
Chapter 9
9.1. C. S. Peng, Q. Huang, W. Q. Cheng, J. M. Zhou, Y. H. Zhang, T. T. Sheng, and C. H. Tung, “Optical Properties of Ge Self-Organized Quantum Dots in Si,” Phys. Rev. B 57, 8805-8808 (1998).
9.2. V. N. Tondare, B. I. Birajdar, N. Pradeep, D. S. Joag, A. Lobo, and S. K. Kulkarni, “Self-Assembled Ge Nanostructures as Field Emitters,” Appl. Phys. Lett. 77, 2394-2396 (2000).
9.3. L. Vescan, T. Stoica, O. Chretien, M. Goryll, E. Mateeva, and A. Mück, “Size Distribution and Electroluminescence of Self- Assembled Ge Dots,” J. Appl. Phys. 87, 7275-7282 (2000).
9.4. O. G. Schmidt and K. Eberl, “Self-Assembled Ge/Si Dots for Faster Field-Effect Transistors,” IEEE Trans. Electron Devices 48, 1175-1179 (2001).
9.5. W.-H. Chang, A. T. Chou, W. Y. Chen, H. S. Chang, T. M. Hsu, Z. Pei, P. S. Chen, S. W. Lee, L. S. Lai, S. C. Lu, and M.-J. Tsai, “Room-Temperature Electroluminescence at 1.3 and 1.55 μm from Ge/Si Self-Assembled Quantum Dots,” Appl. Phys. Lett. 83, 2958-2960 (2003).
9.6. G. Medeiros-Ribeiro, A. M. Brathovski, T. I. Kamins, D. A. A. Ohlberg, and R. S. Williams, “Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes,” Science 279, 353-355 (1998).
9.7. H. J. Kim and Y. H. Xie, “Influence of the Wetting-Layer Growth Kinetics on the Size and Shape of Ge Self-Assembled Quantum Dots on Si(001),” Appl. Phys. Lett. 79, 263-265 (2001).
9.8. M. W. Dashiell, U. Denker, C. Müller, G. Costantini, C. Manzano, K. Kern, and O. G. Schmidt, “Photoluminescence of Ultrasmall Ge Quantum Dots Grown by Molecular-Beam Epitaxy at Low Temperatures,” Appl. Phys. Lett. 80, 1279-1281 (2002).
9.9. G. Jin, J. L. Liu, and K. L. Wang, “Regimented Placement of Self-Assembled Ge Dots on Selectively Grown Si Mesas,” Appl. Phys. Lett. 76, 3591-3593 (2000).
9.10. Y. Zhang and J. Drucker, “Annealing-Induced Ge/Si(100) Island Evolution,” J. Appl. Phys. 93, 9583-9590 (2003).
9.11. O. G. Schmidt, C. Lange, K. Eberl, O. Kienzle, and F. Ernst, “Formation of Carbon-Induced Germanium Dots,” Appl. Phys. Lett. 71, 2340-2342 (1997).
9.12. O. Leifeld, R. Hartmann, E. Müller, E. Kaxiras, K. Kern, and D. Grützmacher, “Self-Organized Growth of Ge Quantum Dots on Si(001) Substrates Induced by Sub-Monolayer C Coverages,” Nanotechnology 10, 122-126 (1999).
9.13. M. Liehr, C. M. Greenlief, S. R. Kasi, and M. Offenberg, “Kinetics of Silicon Epitaxy Using SiH4 in a Rapid Thermal Chemical Vapor Deposition Reactor,” Appl. Phys. Lett. 56, 629-631 (1990).
9.14. T. I. Kaimins, G. Mederiros-Ribeiros, D. A. A. Ohlberg, and R. Stanely Williams, “Evolution of Ge Islands on Si(001) During Annealing,” J. Appl. Phys. 85, 1159-1171 (1999).
9.15. A. C. Mocuta and D. W. Greve, “Epitaxial Si1-yCy Alloys: The Role of Surface and Gas Phase Reactions,” J. Appl. Phys. 85, 1240-1242 (1999).
9.16. R. W. Price, E. S. Tok, N. J. Woods, and J. Zhang, “Growth Dynamics of Si1-yCy and Si1-x-yGexCy on Si(001) Surface from Disilane, Germane, and Methylsilane,” Appl. Phys. Lett. 81, 3780-3782 (2002).
9.17. S. W. Lee, L. J. Chen, P. S. Chen, M. –J. Tsai, C. W. Liu, T. Y. Chien, and C. T. Chia, “Self-Assembled Nanorings in Si-Capped Ge Quantum Dots on (001)Si,” Appl. Phys. Lett. 83, 5283-5285 (2003).
9.18. O. Leifeld, A. Beyer, D. Grützmacher, and K. Kern, “Nucleation of Ge Dots on the C-alloyed Si(001) Surface,” Phys. Rev. B 66, 125312-125315 (2002).
9.19. H. C. Lo, D. Das, J. S. Hwang, K. H. Chen, C. H. Hsu, C. F. Chen, and L. C. Chen, “SiC-Capped Nanotip Arrays for Field Emission with Ultralow Turn-on Field,” Appl. Phys. Lett. 83, 1420-1422 (2003).
9.20. R. H. Fowler and L. Nordheim, “Electron Emission in Intense Electric Fields,” Proc. R. Soc. London, Ser. A 119, 173-181 (1928).
Chapter 10
10.1. Y.-W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, “Kinetic Pathway in Stranski-Krastanov Growth of Ge on Si(001),” Phys. Rev. Lett. 65, 1020-1023 (1990).
10.2. G. Abstreiter, P. Schittenhelm, C. Engel, E. Silveira, A. Zrenner, D. Meertens, and W. Jäger, “Growth and Characterization of Self-Assembled Ge-Rich Islands on Si,” Semicond. Sci. Technol. 11, 1521-1528 (1996).
10.3. O. P. Pchelyakov, Y. B. Bolkhovityanov, A. V. Dvurechenskiĭ, L. V. Sokolov, A. I. Nikiforov, A. I. Yakimov, and B. Voigtländer, “Silicon-Germanium Nanostructures with Quantum Dots: Formation Mechanisms and Electrical Properties,” Semiconductors 34, 1229-2347 (2000).
10.4. K. Eberl. M. O. Lipinski, Y. M. Manz, W. Winter, N. Y. Jin-Phillipp, and O. G. Schmidt, “Self-Assembled Quantum Dots for Optoelectronic Devices on Si and GaAs,” Physica E 9, 164-174 (2001).
10.5. O. G. Schmidt and K. Eberl, “Self-Assembled Ge/Si Dots for Faster Field-Effect Transistors,” IEEE Trans. Electron Devices 48, 1175-1179 (2001).
10.6. G. Medeiros-Ribeiro, A. M. Brathovski, T. I. Kamins, D. A. A. Ohlberg, and R. S. Williams, “Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes,” Science 279, 353-355 (1998).
10.7. F. M. Ross, J. Tersoff, and R. M. Tromp, “Coarsening of Self-Assembled Ge Quantum Dots on Si(001),” Phys. Rev. Lett. 80, 984-987 (1998).
10.8. J. Tersoff, C. Teichert, and M. G. Lagally, “Self-Organization in Growth of Quantum Dot Superlattices,” Phys. Rev. Lett. 76, 1675-1678 (1996).
10.9. O. G. Schmidt, O. Kienzle, Y. Hao, K. Eberl, and F. Ernst, “Modified Stranski–Krastanov Growth in Stacked Layers of Self-Assembled Islands,” Appl. Phys. Lett. 74, 1272-1274 (1999).
10.10. P. Sutter and M. G. Lagally, “Embedding of Nanoscale 3D SiGe Islands in a Si Matrix,” Phys. Rev. Lett. 81, 3471-3474 (1998).
10.11. O. G. Schmidt, U. Denker, K. Eberl, O. Kienzle, and F. Ernst, “Effect of Overgrowth Temperature on the Photoluminescence of Ge/Si Islands,” Appl. Phys. Lett. 77, 2509-2511 (1999).
10.12. E. Carlino, L. Tapfer, and H. von Känel, “Coherent Islands as Preferential Sites for Sticking of Ge Atoms in Si/Ge Multilayers: Formation of Conical Shaped Defects,” Appl. Phys. Lett. 69, 2546-2548 (1996).
10.13. T. I. Kaimins, G. Mederiros-Ribeiros, D. A. A. Ohlberg, and R. Stanely Williams, “Evolution of Ge Islands on Si(001) During Annealing,” J. Appl. Phys. 85, 1159-1171 (1999).
10.14. A. Krost, J. Böhrer, A. Dadgar, R. F. Schnabel, D. Bimberg, S. Hansmann, and H. Burkhard, “High-Resolution X-Ray Analysis of Compressively Strained 1.55 µm GaInAs/AlGaInAs Multiquantum Well Structures near the Critical Thickness,” Appl. Phys. Lett. 67, 3325-3327 (1995).
10.15. P. De Padova, P. Perfetti, R. Pizzoferrato, and M. Casalboni, “Comment on "Germanium Dots with Highly Uniform Size Distribution Grown on Si(100) Substrate by Molecular Beam Epitaxy" [Appl. Phys. Lett. 71, 3543 (1997)],” Appl. Phys. Lett. 73, 2378-2379 (1998).
10.16. S. Fukatsu, Y. Mera, M. Inou, K. Maeda, H. Akiyama, and H. Sakaki, “Time-Resolved D-Band Luminescence in Strain-Relieved SiGe/Si,” Appl. Phys. Lett. 68, 1889-1891 (1996).
10.17. V. Higgs, P. Kightley, P. J. Goodhew, and P. D. Augustus, “Metal-Induced Dislocation Nucleation for Metastable SiGe/Si,” Appl. Phys. Lett. 59, 829-831 (1991).
Chapter 11
11.1. P. Pchelyakov, Y. B. Bolkhovityanov, A. V. Dvurechenskiĭ, L. V. Sokolov, A. I. Nikiforov, A. I. Yakimov, and B. Voigtländer, “Silicon-Germanium Nanostructures with Quantum Dots: Formation Mechanisms and Electrical Properties,” Semiconductors 34, 1229-2347 (2000).
11.2. K. Eberl. M. O. Lipinski, Y. M. Manz, W. Winter, N. Y. Jin-Phillipp, and O. G. Schmidt, “Self-Assembled Quantum Dots for Optoelectronic Devices on Si and GaAs,” Physica E 9, 164-174 (2001).
11.3. W.-H. Chang, A. T. Chou, W. Y. Chen, H. S. Chang, T. M. Hsu, Z. Pei, P. S. Chen, S. W. Lee, L. S. Lai, S. C. Lu, and M.-J. Tsai, “Room-Temperature Electroluminescence at 1.3 and 1.55 µm from Ge/Si Self-Assembled Quantum Dots,” Appl. Phys. Lett. 83, 2958-2960 (2003).
11.4. M. Stoffel, U. Denker, and O. G. Schmidt, “Electroluminescence of Self-Assembled Ge Hut Clusters,” Appl. Phys. Lett. 82, 3236-3238 (2003).
11.5. H. Sunamura, N. Usami, Y. Shiraki, and S. Fukatsu, “Island Formation during Growth of Ge on Si(100): A study Using Photoluminescence Spectroscopy,” Appl. Phys. Lett. 66, 3024-3026 (1995).
11.6. Y. Zhang and J. Drucker, “Annealing-Induced Ge/Si(100) Island Evolution,” J. Appl. Phys. 93, 9583-9590 (2003).
11.7. E. Sutter, P. Sutter, and J. E. Bernard, “Extended Shape Evolution of Low Mismatch Si1-xGex Alloy Islands on Si(100),” Appl. Phys. Lett. 84, 2262-2264 (2004).
11.8. G. Capellini, M. D. Seta, F. Evangelisti, and C. Spinella, “Strain Relief Mechanisms in Ge/Si(100) Islands,” Mater. Sci. Eng. B 101, 106-110 (2003).
11.9. P. Ferrandis and L. Vescan, “Growth and Characterization of Ge Islands on Si(110),” Mater. Sci. Eng. B 89, 171-175 (2002).
11.10. G. Jin, Y. S. Tang, J. L. Liu, and K. L. Wang, “Growth and Study of Self-Organized Ge Quantum Wires on Si(111) Substrates,” Appl. Phys. Lett. 74, 2471-2473 (2003).
11.11. H. Omi and T. Ogino, “Self-Organization of Ge Islands on High-Index Si Substrates,” Phys. Rev. B 59, 7521-7528 (1999).
11.12. A. V. Kolobov, K. Morita, K. M. Itoh, and E. E. Haller, “A Raman Scattering Study of Self-Assembled Pure Isotope Ge/Si(100) Quantum Dots,” Appl. Phys. Lett. 81, 3855-3857 (2002).
Chapter 13
13.1. Z.-Y. Cheng, M. T. Currie, C. W. Leitz, G. Taraschi, E. A. Fitzgerald, J. L. Hoyt, and D. A. Antoniadas, “Electron Mobility Enhancement in Strained-Si n-MOSFETs Fabricated on SiGe-on-Insulator(SGOI) Substrates,” IEEE Electron Device Lett. 22, 321-323 (2001).
13.2. T. Mizuno, S. Takagi, N. Sugiyama, H. Satake, A. Kurobe, and A. Toriumi, “Electron and Hole Mobility Enhancement in Strained-Si MOSFET’s on SiGe-on-Insulator Substrates Fabricated by SIMOX Technology,” IEEE Electron Device Lett. 21, 230-232 (2000).
13.3. E. M. Rehder, C. K. Inoki, T. S. Kuan, and T. F. Kuech, “SiGe Relaxation on Silicon-on-Insulator Substrates: An Experimental and Modeling Study,” J. Appl. Phys. 94, 7892-7903 (2003).
13.4. G. Taraschi, A. J. Pitera, and E. A. Fitzgerald, “Strained Si, SiGe and Ge on-Insulator: Review of Wafer Bonding Fabrication Techniques,” Solid-State Electronics 48, 1297-1305 (2004).
13.5. T. Tezuka, N. Sugiyama, and S. Takagi, “Fabrication of Strained Si on an Ultrathin SiGe-on-Isulator Virtual Substrate with a High-Ge Fraction,” Appl. Phys. Lett. 79, 1798-1800 (2001).
13.6. O. G. Schmidt, U. Denker, M. Dashiell, N. Y. Jin-Phillipp, K. Eberl, R. Schreiner, H. Gräbeldinger, H. Schweizer, S. Christiansen, and F. Ernst, “Laterally Aligned Ge/Si Islands: A New Concept for Faster Field-Effect Transistors,” Mater. Sci. Eng. B 89, 101-105 (2002).