在本論文中我們探討外加電場對於在絕緣矽中產生之光激發自由載子濃度的增益。藉由外加電場我們將靠近絕緣矽表面的能帶彎曲，使得絕緣矽表面附近的自由載子處於累積(accumulation)或反轉(inversion)情況，造成自由載子表面復合(surface recombination)機率可以有效的被減低。另外，我們也討論偏壓極性對於載子濃度的影響。施加偏壓於不同厚度的絕緣矽上，其載子濃度增益也會有不同的表現。此外，施加雙側偏壓所造成的載子濃度增益將比只施加單側邊壓還高，而雙側偏壓的載子濃度增益相當於兩邊單側偏壓所造成載子濃度增益的總和。

In this paper, we studied the enhancement of photon-induced free-carrier density in silicon-on-insulator (SOI) by applying electric field. Under such a bias, electronic band bends near the surface, resulting in the interface condition either in accumulation or inversion that depends on the polarity of bias voltage. Both conditions will effectively suppress the surface recombination. In addition, the photon-induced carrier density is also dependent on the thickness of SOI substrate. The enhancement due to two-side bias (bottom and top) is better than single-side bias, simply equivalent to two effects added together.

[1] V. R. Almeida, C. A. Barrios, R. R. Panepucci, and M. Lipson, “All-optical control of light in a silicon chip,” Nature 431, 1081-1084 (2004).
[2] M. A. Mansouri-Birjandi, M. K. Moravvej-Farshi, and A. Rostami, “Ultrafast low-threshold all-optical switch implemented by arrays of ring resonators coupled to a Mach-Zehnder interferometer arm: based on 2D photonic crystals” Applied Optics, Vol. 47, Issue 27, pp. 5041-5050
[3] B.G. Lee, A. Biberman, P. Dong, M. Lipson, K. Bergman, "All-Optical Comb Switch for Multi-Wavelength Message Routing in Silicon Photonic Networks," IEEE Photonics Technology Letters, vol. 20, no. 10, pp. 767-769, May 15, 2008
[4] Singapore's Nanyang Technological University (NTU) “Photonic crystal yields ultrafast all-optical switch” A.L. Narayan
optics.org, 8 Dec 2006
[5] Masaya Ichimura, Masashi Hirano, Naoki Kato, Eisuke Arai1, Hiroyuki Takamatsu and Shingo Sumie,” Control of Surface Recombination of Si Wafers by an External Electrode” Jpn. J. Appl. Phys. 38 (1999) pp. L292-L294
[6] KUWAYAMA Toshio, ICHIMURA Masaya , ARAI Eisuke “Interface recombination velocity measurements for SOI wafers by .MU.-PCD with electric field.” Applied physics letters, 2003, vol. 83, no5, pp. 928-930
[7] GAO Yong, LI Guo-zheng, LIU Xi-ding, LIU En-ke “SiGe Optical Waveguide Modulators Based. on. the Plasma Dispersion Effect” CHIN.PHYS.LETT ,Vo1.13,No.3( 1996)189
[8] S.M.Sze , SEMICONDUCTOR DEVICE Physics and Technology, Wiley,2002
[9] S.M. Sze , Physics of semiconductor devices, Wiley,1981
[10] Donald A.Neamen, Fundamentals of Semiconductor Physics and Devices, McGraw-Hill,2003
[11] John Wilson, Optoelectronics : an introduction,Wilson,1939
[12]劉傳璽,陳進來, Semiconductor device physics and process theory & practice, 臺北市,五南圖書, 2006
[13] Greg Parker, Introductory semiconductor device physic, New York ; London : Taylor & Francis, 2004.
[14] Sandip Tiwari, Compound semiconductor device physics , Boston : Academic Press, 1992.