近年來，整個三-五族氮化物家族包含氮化鋁、氮化鎵、氮化銦及其三元化合物，在發光元件的蓬勃發展與太陽能電池材料的應用開發，使其相關研究備受矚目。其中的氮化銦鋁(AlxIn1-xN, AlInN)擁有最大的能隙與晶格常數調變範圍，最具發展潛力，但因AlN與InN的生長條件差異大、鍍膜難度最高，以致相關研究最少。
本研究嘗試以脈衝直流反應式濺鍍技術在玻璃基板生長AlInN薄膜：首先，鋁含量為0.36與0.55的AlInN直接濺鍍在玻璃基板，溫度由200 oC升至400 oC有助改善薄膜結晶品質，但會伴隨界面擴散與氧污染問題。經由先在玻璃上製作AlN緩衝層，能顯著提升AlInN薄膜結晶品質、抑制氧污染現象，所得AlInN擁有c軸優選方向，(002)半高寬僅2.9°~3.5°，電子濃度顯著降低，有助於研究AlInN的物理性質。
在光電性質研究上，選擇在AlN/玻璃基板上反應濺鍍x= 0.12~ 0.87的AlInN薄膜，所有成分範圍的 AlInN均具有c軸優選方向，(002)半高寬介於2.6°~3.6°之間，且薄膜內部完全不含氧。在x = 0.12~0.49成分區域，薄膜的電子濃度為1×1016~3×1020 cm-3，經由吸收光譜決定各成分的光學能隙值，並比較相關文獻，確認x ≤ 0.26的AlInN能隙偏高現象源於Burstein-Moss效應，並估算AlInN三元化合物的能隙彎曲係數(Bowing parameter)為4.1 eV。

在機械性質研究方面，以奈米壓痕技術(Nanoindentation)進行量測，再分別以10%薄膜厚度經驗法則與指數函數(Exponential function)回歸法，解析AlInN的薄膜硬度與彈性模數。AlInN的彈性模數測量值隨鋁含量增加而上升，在x = 0與x= 1時分別為105 GPa與300 GPa，而在晶格常數與GaN匹配區域(x = 0.82~0.84)，彈性模數約為275 GPa。經考量InN薄膜的氧污染效應，並比較相關文獻，推估InN合理的彈性模數值約為130 GPa。AlInN的薄膜硬度與成分分布，存有一最大值，應是源於固溶硬化效應。

In recent years, III-N materials such as AlN, GaN, InN and their ternary compounds have attracted great interest in applications such as light-emitting diodes, laser diodes, and solar cells etc. AlxIn1-xN (AlInN) compounds are expected to have immense potential in this field of applications because they possess the widest spectral and lattice constant range in all III-N compounds. There were few reports on the growth of AlInN ternary films due to the large miscibility gap and difference in the thermal stability between AlN and InN.
In this study, AlInN films were grown on glass substrates by pulsed-dc reactive sputtering. XRD analysis showed that the crystallinity of In-rich Al0.36In0.64N and Al-rich Al0.55In0.45N films directly deposited on glass improved as substrate temperature increased from 200 oC to 400 oC. However, for temperatures ≥300 oC, oxygen-diffusion was observed in the whole range from the glass substrate to the AlInN film by XPS analysis. After applying AlN buffer layer, the crystallinity of AlInN films was markedly improved and no oxygen contamination was observed. Highly c-axis-oriented AlInN films with very low FWHM of 2.9°~3.5° were obtained. The electron concentration of AlN-buffered AlInN films was obviously lower than that of oxygen contaminated films.
In the study of optical bandgap, AlInN films with x = 0.12~0.87 grown on AlN/glass have highly c-axis preferred orientation and excellent crystal quality. The FWHM of (002) plane is between 2.6 o and 3.6 o. There is no oxygen detected in the bulk of AlInN films. The electron concentrations of sputtered In-rich AlInN films (x = 0.12~0.49) are in the range of 1×1016~3×1020 cm-3. The bandgaps of AlInN films are determined and compared with previous reports. The bandgap discrepancy of In-rich AlInN can be explained by the Burstein-Moss effect. The bowing parameter for bandgaps of AlInN alloys is 4.1 eV.
Mechanical properties of AlInN films were characterized by nanoindentation. The film hardness was determined by the 10% rule and the elastic modulus was analyzed by a regression method using the exponential function. Elastic modulus of the AlInN films increases monotonously with the content of AlN ranging from 105 GPa to 300 GPa. The elastic modulus of the AlInN films with x = 0.82~0.84 which are lattice-matched with the GaN is found to be 275 GPa. After considering the effect of oxygen contamination and comparing with previous reports, the elastic modulus of the InN film is determined to be 130 GPa. A maximal hardness of 24.0 GPa occurs at x = 0.77. The maximum in hardness is considered to be caused by solid-solution hardening.

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