過去五十年來，隨著摩爾定律的預測，積體電路上的電晶體數量約每兩年就成長一倍，業界也跟隨著 ITRS (International Technology Roadmap for Semiconductors)技術藍圖到達每個電子新技術世代，而以無機半導體作為基底材料的製程發展，造就了現在的電子科技榮景。我們追求三大目標：更小，更快，更冷。更小指的是元件的尺寸更小；更快指的是更快的操作速度；更冷指的是更小的功率損耗。在微縮電晶體同時，也追求更高的電路操作速度和可靠度。為提高運算性能，我們不停的提高電晶體集成度，但近年來，我們在縮小尺寸上遇上了較多的困難，科學家們根據摩爾定律預測，無機半導體積體電路的發展，將在 2020 年左右達到極限。但若想更進一步的提高集成度，各個期刊提出分子電子相關討論。這類研究提供了一個方向去延伸摩爾定律並克服已預見的微縮限制。我們可以預估，20 世紀是無機半導體的世紀，21 世紀將是有機分子電子學的世紀。

本篇論文的內容是先以奈米線遮罩法做出 10 nm 上下的奈米狹縫，此奈米狹縫非常筆直，且寬度一致，以這樣特性的奈米狹縫電極，可提供研究分子電子學一個良好的基礎。再利用熱蒸鍍法，將碳 60 分子沉積在奈米狹縫中，形成超短通道碳 60 電晶體。

本篇第一章介紹分子電子學與碳家族的特性。第二章討論現今製作奈米狹縫的各種技術。第三章分享製作超短通道碳 60 電晶體的方法，包含如何泡製奈米線溶液，並將其均勻的分布於樣品表面，利用定位系統準確的選擇奈米線遮罩，並連接電極，最後沉積碳 60 即可成功地得到超短通道碳 60 電晶體。

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