本論文目的為以光子能量8.8785keV之X 光廣角入射矽奈米線，利用特定原子面(1 1 3)產生表面繞射光，使其沿著矽奈米線方向行走。改變能量、樣品角度φ、矽奈米線寬度等，觀察繞射光於矽奈米線之傳遞及繞射。實驗樣品設計為以晶向[0 0 1]矽單晶為基底，向下蝕刻出數根高度約為3μm，長度約為5mm，寬度450nm 至20μm 的直線形矽奈米線。

本論文的主要結果有兩部份。首先，在出射光2θ-scan 中可得4 個峰值，分別為純矽(1 1 3)表面繞射光、純矽(1 1 3)表面繞射光的鏡面反射光、矽奈米線結構造成的繞射光、矽奈米線結構造成的鏡面反射光。隨著旋轉樣品φ的角度增大，由於矽奈米線結構造成的繞射光入射矽奈米線表面角度變小，會與其鏡面反射光峰值會逐漸靠近，重合成一個峰值。φ的角度增大至20°時，只剩下純矽(1 1 3)表面繞射光與鏡面反射光。此外，實驗上改變入射光能量與改變樣品φ的角度可以找到互相對應的結果。第二部分則是在出射光β-scan中，可得3 個峰值，分別為因空間幾何產生的純矽(1 1 3)表面繞射光、由於純矽(1 1 3)繞射光打到矽奈米線側壁的反射光，以及目前原因不明之峰值。隨著φ的角度增大，純矽(1 1 3)表面繞射光有0.57之關係，矽奈米線側壁的反射光相較純矽(1 1 3)表面繞射光偏轉角度0.86。

This work aims to allow wide-angle X-rays to incident into nanometer silicon wires at the photon energy 8.8785keV. Nanometer silicon wires were prepared on a [0 0 1] silicon wafer with 3μm high, 5mm long along [1 1 0] direction, 450nm to 20μm wide.

The major results of the diffraction experiments may be summarized as follows. First, we can get four peaks in vertical 2θ -scan, which are Si (1 1 3), specular reflection of Si (1 1 3), the peak due to nano-wire and its specular reflection. And the peak due to nano-wire and its specular reflection get closer and merge together when the rotation angle of sample φ increases. Only Si (1 1 3) and specular reflection of Si (1 1 3) left whenφ increase to 20°. Second, the results of different enery and φ can achieve the same effect.

Finally, there are three peaks in horizontal β -scan which are Si (1 1 3), Si(1 1 3) reflected by nano-wire, and the unexplained peak. As increasing φ , Si(1 1 3) wanders off into the relation 0.57, and the angle between Si (1 1 3) and its reflection of nano-wire has the following relationship 0.86.

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