3C結構碳化矽(3C-SiC)在高溫環境下，仍具有良好的機械性質、抗腐蝕性質與抗輻照性質，是極具潛力與備受期待的核能材料。本研究結合超高解析電子顯微鏡與同步輻射X光之單晶繞射技術，分析單晶3C碳化矽材料受矽離子輻照，引致的微結構變化與膨脹效應。各試驗樣品以5.1與7MeV Si2+離子(輻照劑量20dpa)，分別於輻照溫度400、600、800、1000、1200、1350 ℃下進行輻照。

本研究以超高解析電子顯微鏡分析輻照產生之各類缺陷，統整了碳化矽於400~1350℃間，受高劑量矽離子輻照產生之間隙原子團、差排環、Frank型式差排環、疊差環與空孔之大小與密度，進而解釋其演變情形。並利用球面像差修正掃描穿透式電子顯微鏡之環形明場拍攝技術，定位疊差環內碳、矽原子位置。同時，建構原子模型以模擬理想情況下的環形明場影像，模擬結果與實際拍攝影像相符，證實其有兩種形式的結構。分別為含有一層位移之碳/矽原子層的內置型疊差環與含有兩層位移之碳/矽原子層的外置型疊差環，兩者的堆疊分別符合碳化矽2H和4H的多晶型態。此外，也利用此技術，拍攝到啞鈴狀間隙原子與碳原子組成的間隙原子團，兩種點缺陷。

另一方面，分析X光繞射對各類輻照引致之缺陷所造成之效應。利用同步輻射X光搭配八環繞射儀，精確的計算碳化矽各晶面之晶格膨脹造成整體體積膨脹量值，確認了CVD成長之單晶碳化矽材料受輻照後，晶體之a=b<c膨脹行為，證實此不等方向性之膨脹來自底層矽基板之壓應力。並於(002)繞射峰右側觀察到X光漫散射造成之駝峰，推測其為啞鈴狀間隙原子C+/Si+-Si<100>與C+/Si+-C<100>所引起，而啞鈴狀間隙原子與單一點缺陷為主導碳化矽於1000℃以下之晶格膨脹行為的主要缺陷型態。

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