本研究主要發展一低溫直接生長結晶矽薄膜於高分子聚醯亞胺基板之製程，並將其應用於軟性電子元件。研究結果顯示，以微波電漿輔助化學氣相沉積系統搭配四氯化矽/氫氣為前驅物，可成功低溫(＜185oC)生長本質結晶矽薄膜於高分子基板。此低溫生長之主要關鍵乃因四氯化矽/氫氣微波電漿中會所生成H和Cl自由基，此類強蝕刻性自由基會於結晶矽薄膜生長過程中發生優選蝕刻、自我清潔及化學退火效應，加上微波電漿具高密度電漿及離子轟擊效應所致。接著，為有效進行結晶矽薄膜之摻雜，本研究亦開發出一自偏壓濺射固態摻雜源製程於四氯化矽/氫氣微波電漿中。本研究亦導入金觸媒之氣–固–固機制於四氯化矽/氫氣微波電漿製程，搭配氫氣電漿乾蝕刻技術，而製備出具尖端奈米結構之結晶矽柱狀薄膜。
進一步，將上述三種結晶矽薄膜(包含本質結晶矽薄膜、摻雜結晶矽薄膜及結晶矽柱狀薄膜)製備成可撓式結晶矽薄膜電子元件。其研究結果顯示，當以100 nm本質結晶矽薄膜作為薄膜電晶體之通道層時，其元件電性表現之場效載子遷移率可高達106 cm2/Vs及電流開關比1.2 × 106。進一步將本質結晶矽薄膜與摻雜結晶矽薄膜堆疊成單接面型薄膜太陽能電池，其可得到最佳太陽能電池表現：開路電壓0.54 V、短路電流20.91 mA/cm2及光電轉換效率7.36%。如將氫電漿處理之硼摻雜結晶矽柱狀薄膜作為場發射顯示器之陰極，其可達到低起始電場5.88 V/μm及高電流密度1.39 mA/cm2@10 V/μm之優異場發射表現，且此元件之半衰期更可超過10小時。最後，本研究亦證實上述三種結晶矽薄膜電子元件皆具優異之可撓曲性。
以上結果表示，本研究所開發之低溫結晶矽薄膜生長技術可廣泛應用於各種可撓式電子元件，並達到低成本且高效能之目標。

The purpose of this dissertation was to explore the approach of directly preparing high-quality crystalline Si films at low temperatures on a polyimide substrate for use in flexible crystalline Si film-based electronics. For this reason, a low-temperature technique was developed to synthesis intrinsic crystalline Si film using microwave plasma enhanced chemical vapor deposition (MWPECVD) with H2-diluted silicon tetrachloride (SiCl4) mixture as the precursor at a temperature as low as 185oC. The growth mechanism of high crystallinity arises from the synergistic effects of preferential etching, self-cleaning and chemical annealing by the stronger etching species of H and Cl radicals in the high density plasma process accompanying with ion bombardment effect. To dope the crystalline Si film efficiently, the self-biased sputtering solid doping source (SSSDS) process integrated in SiCl4/H2 microwave plasma was proposed. We also synthesized crystalline Si pillar film with a sharp apex nanostructure via the Au-catalyzed vapor–solid–solid (VSS) mechanism using the SiCl4/H2 microwave plasma, followed by H2 plasma treatment.
Furthermore, the resulting crystalline Si films (i.e., intrinsic Si film, doped Si film and Si pillar film) were implemented in flexible crystalline Si film-based electronics. The device performance showed that the flexible Si-thin film transistors using 100 nm intrinsic crystalline Si film as channel layer, exhibited excellent characteristics of high field-effect carrier mobility as high as 106 cm2/Vs and on/off current ratio of 1.2 × 106. Doped and intrinsic crystalline Si films could further be incorporated into a flexible crystalline Si-solar cells with a single junction n–i–p structure. They showed the best performance in open-circuit voltage of 0.54 V, short-circuit current density of 20.91 mA/cm2, and efficiency of 7.36%. In addition, the flexible Si-field emission display using the H2 plasma treated B-doped crystalline Si pillar film as cathode revealed high electron field emission behavior and stability, viz., the low turn-on field of 5.88 V/μm, high current density of 1.39 mA/cm2@10 V/μm, and extremely long half-lifetime over 10 hr were achieved. The superior flexibility for these soft electronics were also demonstrated.
These results thus represent important steps toward a low-cost approach to high-performance flexible crystalline Si film-based electronics.

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