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研究生: 陳盈如
Yin-Ju Chen
論文名稱: 運用貪婪式演算法解決半導體化學機械研磨平坦化問題
Using Greedy Algorithm to Solve the Uniformity Problem of the Chemical Mechanical Polishing Process in Semiconductor Manufacturing
指導教授: 陳飛龍
Fei-Long Chen
劉淑範
Shu-Fan Liu
口試委員:
學位類別: 碩士
Master
系所名稱: 工學院 - 工業工程與工程管理學系
Department of Industrial Engineering and Engineering Management
論文出版年: 2007
畢業學年度: 95
語文別: 中文
論文頁數: 87
中文關鍵詞: 化學機械研磨淺碟效應虛擬電路群集分析
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  • 半導體製造流程是相當繁複的,且需要昂貴的原料、精密的機器,在高標準的無塵製造環境中才能生產,使得半導體產業具有高成本、短生命週期的特性,所以如何提升半導體製程的良率,已經成為一門重要的課題。然而由於晶圓表面電路密度的變異,將會降低晶圓表面的平坦程度,故在半導體製程之化學機械研磨時,由於研磨墊加壓於晶圓表面上的應力分布不均造成表面凹陷的品質不良現象,稱之為淺碟效應 (Dish Effect)。本研究之目的為提出一個適用在半導體製造之化學機械研磨階段的平坦化方法,在半導體晶圓電路圖的設計階段時,以考慮在不違反電路設計規則的前提之下,在合理的工程時間要求之內,將龐大的電路圖資料量以有效率的方法,來進行虛擬電路之填充,以降低淺碟效應之影響。


    The process of semiconductor fabrication is very complex and expensive materials, precise machines and high-standard environment are required for the entire production. High cost and low life cycle have been two of the characteristics of semiconductor industry. How to enhance yield such that the manufacturing cost can be reduced has become one of the most important issues. Finding out factors that may affect yield and continuing to keep track of these factors in the design phase with production design engineers is a good method to effectively improve yield. The purpose of the Chemical Mechanical Polishing (CMP) process is to planarize heights caused by the deposition of thin films such that further levels may be added onto a flat surface.

    摘要.......................................I Abstract...................................II 目錄.......................................V 圖目錄....................................... VII 表目錄....................................... IX 第一章 緒論....................................... 1 1.1 研究背景....................................... 1 1.2 研究動機....................................... 3 1.3 研究目的....................................... 4 1.4 研究方法與內容 .................................... 5 1.5 論文章節架構...................................... 6 第二章 文獻探討....................................... 8 2.1 半導體製程之簡介.................................. 8 2.2 化學機械研磨的探討................................15 2.2.1 平坦化的目的.................................. 15 2.2.2平坦化的技術.................................... 17 2.2.3化學機械研磨的運作原理 .......................... 21 2.2.4化學機械研磨製程之問題 ...........................24 2.3 群集分析(Clustering Analysis)................... 25 2.4設計階段半導體良率提升的技術與方法.................32 第三章 半導體化學機械研磨中啟發式平坦化方法...........35 3.1 問題定義與架構 ....................................35 3.2 建立模式...................................... 38 3.2.1晶圓電路圖資料之轉換.............................39 3.2.2 晶圓電路圖資料的分群方法........................41 3.2.3動態窗格之貪婪啟發式演算法分析填充虛擬電路.......44 第四章 半導體化學機械研磨平坦化實證分析...............54 4.1 實際晶圓電路前處理...............55 4.1.1 實證架構與流程...............55 4.1.2資料準備與轉換...............57 4.1.3 資料群集與動態窗格之貪婪啟發式演算法分析........59 4.2 結果分析與討論 ............................... 64 4.3 實證研究方法論之比較..............................70 第五章 結論及未來展望.................................74 5.1 結論............................................. 74 5.2 未來展望..........................................76 參考文獻............................................. 78

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