超臨界流體是一種同時具有氣體高擴散性與液體高負載能力的流體，可以有效地將物質由微、奈米結構中萃取出來，並且避免結構上的破壞。在本論文研究中，首先，我們應用超臨界流體技術於去除吸附在奈米碳管表面的水氣。由實驗結果得知，添加修飾劑的超臨界流體在50 °C的低溫下即能有效地去除奈米碳管表面吸附的水氣，大幅提高奈米碳管的場發射效率與可靠度；而超臨界流體的壓力對於去除水氣的效果也有著非常顯著的影響。反觀之，超臨界流體也具有攜帶分子進入奈米結構的能力。藉此我們發展出一套嶄新的低溫鈍化薄膜缺陷的技術，利用超臨界流體將氧化劑帶入濺鍍沉積的氧化鉿薄膜內，成功地在150 °C的低溫環境下鈍化薄膜內的缺陷；從各種材料分析中，驗證超臨界流體確實可有效的將氧化劑帶入薄膜內並且透過氧化劑完成缺陷鈍化反應。經過超臨界流體處理後，薄膜的漏電機制由原先的量子穿隧效應轉變為熱激發效應，因此漏電流密度由10-2大幅地降低到10-7(安培/公分2)；除此之外，處理後的氧化鉿薄膜也具有較佳的電容-電壓曲線與較低的等效氧化矽厚度(equivalent oxide thickness)。
接下來，我們運用超臨界流體鈍化缺陷技術於電子槍蒸鍍沉積的氧化矽薄膜，在150 °C的低溫下改變氧化矽能隙內的缺陷密度，進而製作出電阻式記憶體材料；由實驗結果證實，氧化矽薄膜在經過處理後不但具有較佳的介電特性，並且也同時擁有高、低電阻狀態的特性，其電阻狀態可透過外加偏壓所決定。從研究分析中發現，這種可切換電阻狀態的特性與薄膜內的缺陷數目具有很高的關連性。當氧化矽薄膜的能隙中內具有較多缺陷時，則具有較低的電阻切換電壓，且訊號保存時間(retention time)較短；然而，當缺陷數目減少後，其電阻切換電壓將會提高，而訊號保存時間也明顯延長。
最後，我們利用超臨界流體鈍化缺陷技術於改善非晶矽薄膜電晶體特性，減少非晶矽薄膜內的矽懸鍵；在經過處理後，非晶矽薄膜電晶體具有較佳的元件特性，例如: 關閉電流(Off-current)、非晶矽薄膜能隙中的缺陷密度(Density of states)、臨界電壓(Threshold voltage)與次臨界擺幅(Subthreshold swing)等都具有明顯的改善。

Supercritical fluid owns the gas-like and liquid-like properties to extract matter from micro- and nano-structure without damage. In this paper, firstly, we apply the supercritical fluid technology to remove the moisture absorbed in carbon nanotube emitters. From experimental results, it is verified that the supercritical mixed with co-solvent could take moisture away operatively from carbon nanotubes at 50 °C, and the activated field carbon nanotubes have superior emission performance and electrical stability. Besides, the pressure of supercritical fluid would influence the efficiency of activating carbon nanotube emitters. Except extracting, it is allowed also for supercritical fluid to transport molecule into nano-structure. Therefore, we propose originally a low-temperature process for passivating traps by supercritical fluid. In our experiment, the supercritical fluid had delivered successfully the oxidants into sputter-deposited hafnium oxide layer to terminate traps at 150 °C. The material analyses report that the traps were passivated by oxidizing with oxidants. After the proposed treatment, the leakage current density of hafnium oxide is reduced significantly from 10-2 to 10-7 A/cm2, due to the conduction mechanism transformed from quantum tunneling to thermionic emission. The better capacitance-voltage curve and lower equivalent oxide thickness are achieved in addition.
Next, the supercritical fluid technology is used to vary the traps density in band gap of electron-gun evaporation deposited silicon oxide films to produce the resistive switching memory material at 150 °C. The post-treated silicon oxide film exhibits superior dielectric characteristics and a resistive switching between high resistance state and low resistance state which is controlled by applied bias voltage. From experimental results, it is observed that the bistable resistance states are relative to the amount of traps. The silicon film with more traps would present lower voltages of switching resistance state and inferior retention property. Nevertheless, for the silicon film with fewer traps, the higher voltages of switching resistance state are required, and a longer retention property is achieved.
Finally, the application of supercritical fluid technology on improving amorphous silicon thin film transistors is investigated. The transfer characteristics, such as off-current, density of states in middle gap of amorphous silicon, threshold voltage and subthreshold swing, have been enhanced by passivating Si dangling bonds.

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