近年來隨著硬碟機記憶容量的需求愈來愈高，硬碟片的製造技術也顯的愈來愈重要了，尤其是在硬碟片拋光製程部份。有愈好的硬碟片拋光品質，對提昇硬碟片資料儲存量是有很大幫助的，而要有效地改善拋光後硬碟片的表面特性，就必須先瞭解拋光過程的基本加工機制。而本研究的目的便是針對硬碟片拋光機制進行模型的推導。
在模型推導的過程中，除了建立拋光機台的壓應力模型外，並將探討拋光墊、磨粒及工件三者在液動薄膜層中的動作情形與移除量的關係並考量壓力及相對速度對薄膜層厚度的影響。此外，在研究中將對拋光模型的預測值與實驗值進行比較。結果顯示，根據新模型(壓力項及相對速率項的次方和為1)所推算的結果有較佳的預測效果。而拋光機台的壓應力模擬結果亦顯示機台壓力分佈並非均勻，且會影響到拋光效果。

論文最後將結合新模型以及行星齒輪系之運動分析來探討實際拋光的情形，模擬結果顯示選用較高的上、下盤轉速可以得到較高材料移除率及較佳的非均勻度。而拋光力大小對材料移除率之非均勻度並無顯著的影響。此外，太陽齒輪在較低轉速的範圍內對材料移除率及非均勻度亦無明顯的影響。

Bajaj, R., “Effect of Polishing Pad Material Properties on Chemical Mechanical Polishing(CMP) Process,” Mat. Res. Soc. Symp. Proc, vol. 337, pp. 637-644, 1994.
Cook, L. M., “Chemical processes in glass polishing,” Journal of Non-Crystalline Solids, vol. 120, pp. 152-171, 1990.
Heinicke, G., “Tribochemistry,” Berlin, Carl Hanswe Verlag M nchen Wien, 1984.
Komanduri, R., Lucca, D. A., and Tani, Y., “Technological Advances in Fine Abrasive Processes,” Annals of the CIRP, vol. 46, pp. 545-596, 1997.
Liu, C. W., Dai, B. T., Tseng, W. T., and Yeh, C. F., “Modeling of the Wear Mechanism during Chemical-Mechanical polishing,” Journal of Electrochemistry Society, vol. 143, no. 2, 1996.
Mori, Y., Yamauchi, K., and Endo, K., “Elastic emission machining,” Precision Engineering, vol. 9, no. 3, pp. 123-128, 1987.
Nakamura, T., Akamatsu, K., and Arakawa, N.., “A Bowl Feed and Double Sides Polishing for Silicon Wafer for VLSI,” Bull. Japan Soc of Prec. Engg., vol. 19, no. 2, pp. 120-125, 1985.
Nanz, G. and Camilletti, L. E., “Modeling of Chemical-Mechanical Polishing : A review,” IEEE Transactions on Semiconductor Manufacturing, vol. 8, no. 4, pp. 382-389, 1995.
Rabinowicz, E., “On the mechanism of polishing with abrasives,” Wear, vol.18, pp.169-170, 1971.
Runnels, S. R. and Eyman, L. M., “Tribology Analysis of Chemical-mechanical Polishing,” Journal of Electrochemistry Society, vol. 141, no. 6, pp. 1689-1701, 1994.
Runnels, S. R., “Feature-scale Fluid-based Erosion Modeling for Chemical-mechanical Polishing,” Journal of Electrochemistry Society, vol. 141, no. 7, pp. 1900-1904, 1994.
Sivaram, S., et al., “Measurement and Modeling of Pattern Sensitivity during Chemical-mechanical Polishing of Interlevel Dielectrics,”, SEMATECH, Austin, TX, TECH, Tech. Rep., 1992.
Thakurta, D. G., Borst, C. L., Schwendeman, D. W., Gutmann, R. J., and Gill, W. N., “Pad porosity, compressibility and slurry delivery effects in chemical-mechanical planarization:modeling and experiments,” Thin Solid Films, vol. 366, pp. 181-190, 2000.
Karaki-Doy, Y., Aye, M. M., Sakai, K., Kasai, T., Nakagawa, I., and Inada, Y., “High Grade Precision Polishing Technique by a New Polishing Machine for Chalcone Crystals,” Int. J. Japan Soc. Pre. Eng., vol. 29, no. 3, pp. 217-221, 1995.
Tsai, H. Y., “Analysis of Nonuniformity Based on Material Removal and Kinematics in Chemical-Mechanical Planarization,” Ph. D. Thesis, Department of Power Mechanical Engineering, National Tsing Hua Univ., 1999.
Tseng, W. T., Wang, Y. L., “Re-examination of Pressure and Speed Dependences of Removal Rate During Chemical-Mechanical Polishing Processes,” Journal of Electrochemistry Society, vol. 144, no. 2, pp. L15-L17, 1997.
Vora, H., Orent, T.W., and Stokes, R. J., “Mechano-chemical Polishing of Silicon Nitride,” Communication of the American Ceramic Society, vol. 65, C140-C141, 1982.
吳孟隆, “研磨液滴入位置對硬碟片拋光後表面特性的影響”, 國立清華大學碩士論文, 1999
吳秉天, “硬碟機之磁碟介紹”, 電子月刊, pp. 73-78, 八月號, 1997.
胡際強, “拋光模型之研究”, 國立清華大學碩士論文, 2000.
賴國智, 林宏彝, “雙面拋光機之加工率特性分析”, 機械工業雜誌, pp. 158-164, 八月號, 1998.