隨著各種新型氧化物半導體的研究發明，應用在薄膜電晶體的主動通道層，平板顯示器等相關產品在社會上逐漸普及，形成巨大的商業市場，為了減少製程上的成本又同時保持優異的電性表現，開發合適的二元氧化物半導體是不曾停歇的。SnO2是一種極具吸引力的氧化物半導體，在金屬鋅、銦及錫之中，其擁有研究中最高的本質遷移率及能帶間隙，然而，傳統的未摻雜SnO2薄膜電晶體具有高操作電壓、高次臨界擺幅以及低載子遷移率特性，會限制高速以及高解析度的顯示器發展，因此，本論文提出一種方式來提升元件特性，我們使用SnO混合少量SnO2氧化物半導體薄膜當作元件的通道層，成功實現N型上閘極結構的薄膜電晶體，並使用高介電係數材料ZrO2作為元件的閘極介電層，此薄膜電晶體在400度的退火條件下，因為高閘極電容密度及低的介面缺陷密度，元件具有相當陡峭的次臨界擺幅，此外，元件同時擁有較高的載子遷移率及不錯的開關電流比。
綜合以上的結果，我們認為此未摻雜的二元氧化物半導體具有相當大的潛力成為低成本及值得量產的薄膜電晶體技術之一。

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