電阻式記憶體(Resistive RAM)為近年來受到高度注意的新型非揮發性記憶體。韓國三星電子於2004年表示RRAM具有超越被譽為新一代夢幻記憶體MRAM(Magnetoresistive RAM)的潛力。RRAM更在2010年被EETimes美國版所選出的十項具潛力新興技術。RRAM有著讀寫速度快，結構簡單，驅動的電壓低，耗能低等優點，目前屬於發展初期的百家爭鳴階段，本實驗研究非晶氧化矽材料的電阻轉換行為，並在非晶氧化矽中添加的微量的鋁( < 2 at %)來誘發許多缺陷如氧空缺的產生，再加上製程參數的調整，控制不同程度的鋁添加量、鍍膜時候的氬氧比(Ar/O2 ratio)、以及Al-SiOx厚度等等，找出Al-SiOx的電阻轉換的鍍膜最佳參數，期望以Al-SiOx薄膜製程簡單，成本低，和半導體製程相容性極高的優勢，未來有潛力可以應用在RRAM上。
　　最佳參數試片Pt/Al-SiOx(WAl = 15 W、PO2 = 15 %、厚度30 nm)/TiN表現單極電阻轉換行為，電性表現為：Foming電壓為15 V(CC 5 mA)；循環次數100次以內RESET電壓為1V，SET電壓為2.2 V(CC 3 mA)；最佳循環次數有676次，但中間會有兩次RESET電壓躍升；高低電阻態相當穩定，其比值為102；高低電阻態可以穩定維持達1 × 104秒。經過許多分析結果顯示出其電阻轉換機制屬於Thermochemical system，其導通路徑由氧空缺組成。
　　透過更換上電極來探討不同電極對電性表現的影響，更換為Al上電極會造成Al/Al-SiOx交界面形成氧化物而失效；更換為Ti上電極則沒有改善電性表現；更換為Cu上電極後可以表現出單極或是雙極電阻轉換行為，其中雙極電轉換行為較穩定， forming電壓為2.2 V(CC 1 mA)，RESET電壓-0.5 V，SET電壓0.6 V(CC 500 □A)，循環次數達68次，高低電阻態比值有10。經過許多分析，結果顯示出雙極電阻轉換機制屬於Electrochemical Metallization System，靠Cu的氧化還原形成Cu的導通路徑；單極電阻轉換機制屬於Electrochemical Metallization System，同樣靠著Cu的還原形成Cu的導通路徑，但RESET靠Joule-heating。

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