以溶液方式合成之銅摻雜四氧化三鈷作為光伏元件之吸收層

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研究生：	何俊德 Ho, Chun-Te
論文名稱：	以溶液方式合成之銅摻雜四氧化三鈷作為光伏元件之吸收層 Solution-processed Cu-doped Co3O4 as an Absorption Layer for Photovoltaics
指導教授：	游萃蓉 Yew, Tri-Rung
口試委員:	李紫原林俊榮
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學工程學系 Materials Science and Engineering
論文出版年：	2012
畢業學年度：	100
語文別：	中文
論文頁數：	155
中文關鍵詞：	銅摻雜四氧化三鈷、奈米結構
外文關鍵詞：	Cu-doped Co3O4, nanostructure
相關次數：	點閱：1 下載：0
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本研究利用溶液製程，成長穩定性好、對環境無害、且可大面積製作之新穎Cu-doped Co3O4奈米棒、奈米顆粒與奈米粒薄膜，並以此氧化物材料試製成新穎氧化物異質介面太陽能電池，驗證Cu-doped Co3O4運用於太陽能電池吸收層之可行性。
本研究亦針對不同摻雜濃度之Cu-doped Co3O4奈米棒於X光繞射、穿透式電子顯微鏡、以及拉曼光譜儀分析，確認已成功合成Cu-doped Co3O4奈米棒，且為多晶結構，藉由X-ray 光電子能譜儀分析化學成分確認銅摻雜進入Co3O4，以及利用感應耦合電漿質譜儀做銅定量分析；在光學性質方面，利用紫外/可見光吸收光譜、陰極激發放光系統分析可知隨著調變銅的摻雜量，增加吸收率與其吸收係數。且由不同的銅摻雜量，可在1.3 - 1.4 eV以及2.55 - 3.5 eV之間調變其能隙。驗證出Cu-doped Co3O4奈米棒為一相當具有潛力的光吸收媒介。此外，藉由調整不同參數成長Cu-doped Co3O4奈米粒薄膜，並以霍爾效應量測系統分析電性。得到最佳之載子濃度為1015 - 1016 cm-3，載子遷移率為1 - 10 cm2 / (V•s)。
本研究也製備出p-Cu-doped Co3O4奈米粒薄膜 / n-ZnSe薄膜異質接面太陽能電池，其太陽能電池電性表現為Voc = 0.14 V、Jsc = 0.65 mA/cm2、FF = 27 %、η = 0.028 %，其中短路電流密度較噴塗n-TiO2，及熱壓方式製作之電流上升數百倍。由上述結果可知Cu-doped Co3O4為一新穎之氧化物吸收層材料，且具有應用於太陽能電池之潛力。

摘要    I
Abstract    III
誌謝     V
目錄     XI
圖目錄     XVI
表目錄     XXV
第一章    緒論    1
第二章    文獻回顧及原理簡介    5
1 太陽能電池簡介    5
1.1 太陽能電池工作原理    8
1.2太陽能電池電學性質    12
2以氧化物基底材料作為吸收層之固態太陽能電池    16
3 四氧化三鈷基底材料之製備與應用    20
第三章    實驗流程與儀器簡介    22
1實驗步驟    24
1.1 p型銅摻雜四氧化三鈷(Cu-doped Co3O4)奈米結構及奈米粒薄膜製備    24
1.2 Cu-doped Co3O4異質接面太陽能電池之製備    27
2. 實驗儀器簡介    33
2.1場發射掃描電子顯微鏡、能量散佈分析儀    33
2.2高解析度穿透式電子顯微鏡    35
2.3 X光繞射分析儀    37
2.4拉曼光譜儀    38
2.5薄膜厚度輪廓量測儀    40
2.6霍爾效應量測系統    41
2.7紫外/可見光吸收光譜儀    43
2.8陰極激發放光儀    45
2.9熱重分析儀    47
2.10 X-ray光電子能譜儀    49
2.11熱壓成型系統    51
2.12聚焦離子顯微束系統    52
2.13感應耦合電漿質譜分析儀    54
2.14太陽能電池效率量測系統    56
第四章 實驗結果與討論    58
1水熱法合成Cu-doped Co3O4 奈米結構    60
1.1鈷前驅物濃度Co(NO3)2•6H2O對Cu-doped Co3O4奈米結構形貌之影響    60
1.2氨水濃度對Cu-doped Co3O4奈米結構形貌之影響    64
1.3反應溫度對Cu-doped Co3O4奈米結構形貌之影響    68
1.4 醋酸銅水合物濃度與硝酸鈷六水合物莫耳濃度比對於Cu-doped Co3O4奈米結構形貌之影響    72
2 Cu-doped Co3O4奈米棒分析    76
2.1 Cu-doped Co3O4奈米棒TG-DTA 熱重分析    76
2.2 Cu-doped Co3O4奈米棒X光繞射分析    78
2.3 Cu-doped Co3O4奈米棒微結構與成分分析    81
2.4 Cu-doped Co3O4奈米棒微量元素分析    86
2.5 Cu-doped Co3O4奈米棒拉曼光譜儀分析    88
2.6 Cu-doped Co3O4奈米棒X-ray光電子能譜儀成分分析    92
2.7 Cu-doped Co3O4奈米棒光學性質分析    96
2.7.1 Cu-doped Co3O4奈米棒紫外/可見光吸收光譜及其能隙分析    96
2.7.2 Cu-doped Co3O4奈米棒陰極激發放光儀能譜分析    101
3水熱法成長Cu-doped Co3O4 奈米粒薄膜    105
3.1反應溫度對Cu-doped Co3O4奈米粒薄膜表面形貌    106
3.2反應溫度對Cu-doped Co3O4奈米粒薄膜X-ray繞射分析    109
3.3 Cu-doped Co3O4奈米粒薄膜霍爾效應量測分析    111
3.3.1不同反應溫度對Cu-doped Co3O4奈米粒薄膜電性影響    112
3.3.2不同氨水濃度對Cu-doped Co3O4奈米粒薄膜電性影響    114
3.3.3不同醋酸銅水合物與硝酸鈷六水合物莫耳濃度比值對 Cu-doped Co3O4奈米粒薄膜電性影響    116
4以p-Cu-doped Co3O4奈米結構與奈米粒薄膜製作異質接面太陽能電池元件分析    119
4.1以n-TiO2作為n-type半導體層組合之太陽能電池    120
4.1.1以噴塗n-TiO2奈米顆粒於自組裝p-Cu-doped Co3O4奈米棒方式製作之太陽能電池    120
4.1.2以噴塗n-TiO2奈米顆粒與p-Cu-doped Co3O4奈米顆粒方式製作之異質接面太陽能電池    123
4.2以n-ZnSe作為n-type半導體層製作之太陽能電池    127
4.2.1 n-ZnSe薄膜厚度對於n-ZnSe/p-Cu-doped Co3O4奈米粒薄膜異質接面太陽能電池之效率影響    128
4.2.2退火處理對於n-ZnSe / p-Cu-doped Co3O4奈米粒薄膜之異質接面太陽能電池之效率影響    133
第五章 結論    137
第六章 未來展望    140
參考文獻    142
本研究產出之論文發表    155

                                

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