本論文主要研究將原子層沉積法(Atomic layer deposition , ALD)成長高品質的氧化鋅(Zinc Oxide,ZnO)薄膜應用於新穎主動層材料製作出高效反式結構有機太陽能電池，並探討其中之研究發展，原子層沉積法可以成長出緻密且一致性高的氧化鋅薄膜，且氧化鋅抗水氧能力強，且具有良好的載子傳輸能力。
　　在先前實驗室研究中已利用原子層沉積法所成長的氧化鋅薄膜當作電子傳輸層(Electron Selective Layer)，並應用於軟性基板上所製作的反式結構有機太陽能電池達4.18%，因此我們將深入探討原子層沉積法的成長參數以及如何有效定義出氧化鋅的成長區域，來得到我們想要的高品質氧化鋅薄膜，接著並探討新穎主動層材料的特性與分析，且應用於全溶液製程的反式結構(ITO/ZnO/Blend/PEDOT:PSS/Ag)上，得到高效率反式太陽電池。
　　最後將探討對元件的最佳化退火處理，在此退火處理後我們成功將元件效率提升到7.148%，這是我們利用原子層沉積法成長氧化鋅薄膜，並利用新穎材料所製作的反式結構太陽電池的最佳效率。

Atomic layer deposition (ALD) is a kind of chemical vapor deposition (CVD) technique, it have conformal and high quality film can be deposited by ALD process and Zinc Oxide has high mobility and air-stable, Zinc Oxide layer can be prepared by ALD at low temperatures and in other research with the ALD-grown Zinc Oxide electron selective layer in flexible inverted Organic photovoltaic devices, a maximum PCE of 4.18%.
In this work, we using solution process design inverted structure is ITO/ZnO/Blend/PEDOT:PSS/Ag, and using ALD- growth Zinc Oxide at ITO glass as electron selective layer and using novel donor material as active layer to achieved high efficiency inverted organic solar cells. The devices exhibit a PCE of 7.148% with optimum film thickness and annealing method.

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