這篇論文，成功的設計和製造可用於指紋感測電容式觸覺感測器陣列，此感測器電容之電極可利用簡便CMOS後製程步驟產生，且此電極是由CMOS電晶體內部之金屬和金屬間介電層所構成，所以不需再作額外的薄膜沉積，且感測電路位於感測結構下方，有助於縮小晶片面積。陣列中的每Pixel大小為 65 μm× 65 μm，最初的感測電容值為12 fF。該晶片量測平均靈敏度為 1.14 fF/Mpa，其感測電容結構彈簧係數為1.424 kN/m，此形式的CMOS(MEMS)指紋感測器跟以前提出CMOS(MEMS) 指紋感測器相比具有價格上的優勢且也能夠成功的感測出指紋圖像。

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