近年來多巴胺量的多寡對於腦內疾病有著嚴重的影響，近年來因缺少多巴胺而產生的疾病有帕金森氏症與阿茲海默症，因此建立一個可即時監控腦內多巴胺的電子平台是我們目標。這篇論文敘述了如何大範圍感測多巴胺傳導物質與範圍性刺激細胞，使用電化學感測機制與刺激陣列晶片，並且使用微機電後製程技術整合指叉式金電極於晶片上，利用lift-off方式製作有著5 μm的間隔的電極。CMOS感測電路是電流轉電壓型態，有著1 pF的充電電容與定電壓目的的主動電流源放大器，並且有著大動態範圍。根據先前實驗結果氧化與還原電位分別為-0.2 V與+0.6 V，還原電流相對於多巴胺濃度的靈敏度約為0.25 nA⁄μM。整體功率消耗約為14.5μW。

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