石墨烯因有超高的電子遷移率特性而使其電晶體應用備受期待，但以CVD石墨烯製作出的電晶體卻因製程汙染而使遷移率大幅降低;其汙染，主要源自CVD石墨烯轉印過程中的銅箔金屬催化劑蝕刻而導致的金屬粒子雜質與水分子吸附。本論文欲透過電化學分離法快速剝離而不溶蝕銅箔的蝕刻機制，加上異丙醇介面置換，降低轉印製程的汙染並改善CVD石墨烯轉印潔淨度與電晶體品質;並以光學、穿透式電子顯微鏡與真空變溫的電晶體電性量測，分析其潔淨度改善程度。本文從實驗結果指出:電化學分離法優於一般化學蝕刻法(鹽酸與氯化鐵)，使場效電洞遷移率可至1250cm2/Vs;並提出改善蝕刻與轉印製程的建議。

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