摘要
本篇論文呈現出我們能藉由不同的成長方式(自然成長和退火處理)來調控有機薄膜內分子排列方式，進而改變有機薄膜內電子態結構和有機薄膜與金屬介面間的能階並列關係。我們藉由角解析光電子能譜了解極性酞菁(氯鋁化酞菁)薄膜成長於銀薄膜上時有機薄膜結構與與電子態結構關係，其中一層自然成長的有機薄膜主要是由氯在下的酞菁分子所構成；而一層退火處理的有機薄膜則是氯在上的酞菁分子所構成，同時我們也觀察到以自然成長方式生成的有機薄膜，其真空能階(最高佔據分子軌域)會隨著薄膜厚度增加而上升(靠近費米能階)；但以退火處理方式生成的有機薄膜，其真空能階(最高佔據分子軌域)會隨薄膜厚度增加而降低(遠離費米能階)，此種現象說明著我們能藉由成長薄膜方式的不同來改變有機薄膜與金屬介面間能階並列關係，而這對於有機電子元件的製作上極為重要。

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